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    N-MOSFET 75A 80V Search Results

    N-MOSFET 75A 80V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3228-E Renesas Electronics Corporation Nch Single Power Mosfet 80V 75A 7.5Mohm To-220Ab Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N-MOSFET 75A 80V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP100N10 N-Channel PowerTrench MOSFET 100V, 75A, 10mΩ Features Description • RDS on = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP100N10 FDP100N10 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP100N10 N-Channel PowerTrench MOSFET 100V, 75A, 10mΩ Features Description • RDS on = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP100N10 O-220 PDF

    marking 702 FAIRCHILD

    Abstract: FDP090N10
    Text: FDP090N10 tm N-Channel PowerTrench MOSFET 100V, 75A, 9mΩ Features General Description • RDS on = 7.2mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP090N10 O-220 marking 702 FAIRCHILD FDP090N10 PDF

    FDP100N10

    Abstract: No abstract text available
    Text: FDP100N10 N-Channel PowerTrench 100V, 75A, 10mΩ tm MOSFET Features Description • RDS on = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP100N10 O-220AB FDP100N10 PDF

    FDP100N10

    Abstract: No abstract text available
    Text: FDP100N10 N-Channel PowerTrench tm MOSFET 100V, 75A, 10mΩ Features Description • RDS on = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP100N10 O-220 FDP100N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP090N10 tm N-Channel PowerTrench MOSFET 100V, 75A, 9mΩ Features General Description • RDS on = 7.2mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP090N10 O-220 PDF

    UTT75N08

    Abstract: ID75A
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT75N08 Power MOSFET 75A, 80V N-CHANNEL POWERTRENCH MOSFET „ DESCRIPTION The UTC UTT75N08 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low


    Original     		UTT75N08 UTT75N08 ON21m QW-R502-769 ID75A PDF

    TO-220F1

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT75N08 Power MOSFET 75A, 80V N-CHANNEL POWERTRENCH MOSFET „ DESCRIPTION The UTC UTT75N08 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low


    Original     		UTT75N08 UTT75N08 ON21m O-220 O-220F1 QW-R502-769 TO-220F1 PDF

    19v 4.74A

    Abstract: IRHNA63160 IRHNA64160 IRHNA67160 IRHNA68160
    Text: PD - 94299 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67160 100K Rads (Si) RDS(on) 0.01Ω ID 75A* IRHNA63160 300K Rads (Si) 0.01Ω 75A* IRHNA64160 600K Rads (Si)


    Original     		IRHNA67160 IRHNA67160 IRHNA63160 IRHNA64160 IRHNA68160 1000K 90MeV/ MIL-STD-750, MlL-STD-750, 19v 4.74A IRHNA63160 IRHNA64160 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDB047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially


    Original     		FDB047N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially


    Original     		FDP047N10 FDP047N10 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially


    Original     		FDP047N10 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT75N08 Power MOSFET 75A, 80V N-CHANNEL POWERTRENCH MOSFET 1 TO-220  DESCRIPTION The UTC UTT75N08 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low


    Original     		UTT75N08 O-220 UTT75N08 O-220F1 QW-R502-769 PDF

    FDP047N10

    Abstract: No abstract text available
    Text: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially


    Original     		FDP047N10 O-220 FDP047N10 PDF

    FDB047N10

    Abstract: single HIGH SPEED POWER MOSFET
    Text: FDB047N10 N-Channel PowerTrench tm MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially


    Original     		FDB047N10 FDB047N10 single HIGH SPEED POWER MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP047N10 N-Channel PowerTrench tm MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially


    Original     		FDP047N10 FDP047N10 O-220 PDF

    FDP053N08B

    Abstract: No abstract text available
    Text: FDP053N08B_F102 N-Channel PowerTrench MOSFET 80V, 120A, 5.3mW Features Description • RDS on = 4.2mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF

    MOSFET 100V

    Abstract: No abstract text available
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mW Features Description • RDS on = 4.6mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP054N10 FDP054N10 O-220 MOSFET 100V PDF

    FDP036N10A

    Abstract: fdp036n10 FDP036N0A 47w marking fdp036
    Text: FDP036N10A N-Channel PowerTrench MOSFET 100V, 176A, 3.6mW Features Description • RDS on = 3.2mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP036N10A O-220AB FDP036N10A fdp036n10 FDP036N0A 47w marking fdp036 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDB035N10A N-Channel PowerTrench MOSFET 100V, 176A, 3.5mW Features Description • RDS on = 3.0mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDB035N10A FDB035N10A PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDP054N10 O-220 PDF

    fdp054n10

    Abstract: No abstract text available
    Text: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP054N10 FDP054N10 O-220 PDF

    FDP036N0A

    Abstract: FDP036N10A
    Text: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 176A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP036N10A O-220AB FDP036N0A FDP036N10A PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 214A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP036N10A FDP036N10A O-220AB PDF