Untitled
Abstract: No abstract text available
Text: TOSHIBA HN1C01F TOSHIBA TRANSISTOR h SILICON NPN EPITAXIAL TYPE PCT PROCESS N1 r n1 F Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • Small Package (Dual Type) High Voltage and High Current : V(}EO = 50V, Ic = 150mA (Max.)
|
OCR Scan
|
HN1C01F
150mA
61001EA
|
PDF
|
B82991-S2901-N1
Abstract: N1H1 B82991-S
Text: Chokes for Power Lines B82991-S*-N1 Data Sheet Chokes for Power Lines B82991-S*-N1 PFC Chokes Rated voltage 250 Vac/350 Vdc Rated current 0,6 to 1,2 A Rated inductance 42 to 68 mH Construction 3 3 3 3 3 Choke consists of laminated iron Polyamid coil former
|
Original
|
B82991-S
Vac/350
B82991-S2901-N1
N1H1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors NPN general purpose transistor BC846W; BC847W; BC848W PIN CONFIGURATION FEATURES • S- mini package. n* n1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN Top view DESCRIPTION
|
OCR Scan
|
BC846W;
BC847W;
BC848W
OT323
MBC670
BC846AW:
BC846BW:
BC847W:
BC846W
|
PDF
|
transistor marking N1
Abstract: BFU725F JESD625-a LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave
Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
|
Original
|
BFU725F/N1
OT343F
JESD625-A
BFU725F
transistor marking N1
LNB ka band
160 germanium transistor
ka-band mixer
DRO lnb
germanium transistors NPN
ka band lna
nxp DC to microwave
|
PDF
|
LPE-3325-A142
Abstract: No abstract text available
Text: LPE-3325-A142 Vishay Dale Current Sense Transformer ELECTRICAL SPECIFICATIONS Transformer Ratio N1/N2 : 1:70 Secondary Inductance: 980µH minimum @ 0.1Vrms, 100KHz Primary DC Current: 6.0 A(dc) for temperature rise of 30°C maximum Secondary DC resistance: 4.71 ohm maximum
|
Original
|
LPE-3325-A142
100KHz
18-Jul-08
LPE-3325-A142
|
PDF
|
transistor marking N1
Abstract: LNB ka band Germanium power
Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
|
Original
|
BFU725F/N1
OT343F
JESD625-A
BFU725F
transistor marking N1
LNB ka band
Germanium power
|
PDF
|
transistor marking N1
Abstract: marking code n1 MARKING N2 N1 MARKING CODE n1 a marking
Text: Telecommunication COMMON MODE CHOKE Transformers DT35-3601TB DT35-3602TB DT35-3603TB 4 3 MARKING 1 3 N1 DT35-XXXXXX N2 4 2 DELTAXXXX 1 2 XXXX : DATE CODE F A C D B E DIMENSIONS IN mm A B 24.0 MAX. 16.3 0.3. C 9.6 MAX. D E F G 2.9 0.4 3.56 0.2 15.0 MAX. ELECTRICAL CHARACTERISTICS
|
Original
|
DT35-3601TB
DT35-3602TB
DT35-3603TB
DT35-XXXXXX
10KHz
transistor marking N1
marking code n1
MARKING N2
N1 MARKING CODE
n1 a marking
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
|
Original
|
PBSS5260QA
DFN1010D-3
OT1215)
PBSS4260QA.
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5230QA 30 V, 2 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
|
Original
|
PBSS5230QA
DFN1010D-3
OT1215)
PBSS4230QA.
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
|
Original
|
PBSS4260QA
DFN1010D-3
OT1215)
PBSS5260QA.
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS4230QA 30 V, 2 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
|
Original
|
PBSS4230QA
DFN1010D-3
OT1215)
PBSS5230QA.
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB65UPE
DFN1010D-3
OT1215)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB56EN
DFN1010D-3
OT1215)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic
|
Original
|
PMCXB900UE
DFN1010B-6
OT1216)
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB120EPE
DFN1010D-3
OT1215)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB40UNE
DFN1010D-3
OT1215)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB40UNE
DFN1010D-3
OT1215)
|
PDF
|
lg crt tv circuit diagram
Abstract: diagram LG LCD TV circuits lg philips crt monitor circuit diagram lg led tv internal parts block diagram TDA8358 equivalent diagram power supply LG 32 in LCD TV circuits lg crt monitor circuit diagram vga to pal video convertor ic saa5800 TDA9330
Text: APPLICATION NOTE Application information for I2C-bus controlled TV-processor TDA933XH AN98073 Philips Semiconductors E W Philips Semiconductors TDA9330/31/32 H TV Display processor Application Note AN98073 Abstract This report gives a description of the TDA933X-N1 version, together with application aspects.
|
Original
|
TDA933XH
AN98073
TDA9330/31/32
TDA933X-N1
1N4148
100nF
TDA933X
lg crt tv circuit diagram
diagram LG LCD TV circuits
lg philips crt monitor circuit diagram
lg led tv internal parts block diagram
TDA8358 equivalent
diagram power supply LG 32 in LCD TV circuits
lg crt monitor circuit diagram
vga to pal video convertor ic
saa5800
TDA9330
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB75UPE
DFN1010D-3
OT1215)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB75UPE
DFN1010D-3
OT1215)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
|
Original
|
PMXB65ENE
DFN1010D-3
OT1215)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS5130QA 30 V, 1 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
|
Original
|
PBSS5130QA
DFN1010D-3
OT1215)
PBSS4130QA.
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 60 8D -2 PMEG2020EPK 20 V, 2 A low VF MEGA Schottky barrier rectifier 10 February 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small
|
Original
|
PMEG2020EPK
DFN1608D-2
OD1608)
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DF N1 60 8D -2 PMEG4020EPK 40 V, 2 A low VF MEGA Schottky barrier rectifier 11 February 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small
|
Original
|
PMEG4020EPK
DFN1608D-2
OD1608)
AEC-Q101
|
PDF
|
