n20 n21 fet
Abstract: 53E1 FDG6318PZ SC-70-6 SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4
Text: FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital
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FDG6318PZ
1200m
SC-70-6
n20 n21 fet
53E1
FDG6318PZ
SC70-6
dual transistors sc-70-6
N2 SC70
SC-70-6 zener 15v
27E4
55E-4
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PDF
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76129S
Abstract: 76129P HUF76129P3 HUF76129S3S HUF76129S3ST TB334
Text: HUF76129P3, HUF76129S3S Semiconductor Data Sheet 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. 6129P3 This advanced process technology
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HUF76129P3,
HUF76129S3S
6129P3
HUF76
129S3S
00e-4
90e-2
80e-1
76129S
76129P
HUF76129P3
HUF76129S3S
HUF76129S3ST
TB334
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PDF
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76145S
Abstract: 76145P HUF76145P3 HUF76145S3S HUF76145S3ST TB334
Text: HUF76145P3, HUF76145S3S Semiconductor Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the 145P3, innovative UltraFET process. HUF76 This advanced process technology
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HUF76145P3,
HUF76145S3S
HUF76
145P3,
145S3S
06e-3
71e-3
07e-2
12e-2
76145S
76145P
HUF76145P3
HUF76145S3S
HUF76145S3ST
TB334
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PDF
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76129D
Abstract: 129D3 motor drive HUF76129D3 HUF76129D3S TB334
Text: HUF76129D3, HUF76129D3S Semiconductor Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the innovative UltraFET process. 129D3, This advanced process technology
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HUF76129D3,
HUF76129D3S
HUF76
129D3,
HUF761
29D3S)
90e-2
80e-1
00e-1
76129D
129D3 motor drive
HUF76129D3
HUF76129D3S
TB334
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PDF
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76132P
Abstract: HUF76132P3 HUF76132S3S HUF76132S3ST TB334
Text: HUF76132P3, HUF76132S3S Semiconductor Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the innovative UltraFET process. This 132P3, advanced process technology
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HUF76132P3,
HUF76132S3S
HUF76
132P3,
132S3S
low30V,
51e-2
03e-2
05e-2
76132P
HUF76132P3
HUF76132S3S
HUF76132S3ST
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: HAJtms S HUF76129D3, HUF76129D3S S e m ic o n d u c to r 7 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 20A, 30V • Ultra Low On-Resistance, ros ON = 0.016£2 • Temperature Compensating PSPICE Model
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OCR Scan
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HUF76129D3,
HUF76129D3S
O-252AA
T0-252AA
330mm
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PDF
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TC11E
Abstract: 19E-9 FDP8870 RS21E
Text: FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low
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FDP8870
O-220AB
TC11E
19E-9
RS21E
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FDP047AN
Abstract: FDH047AN08A0 FDI047AN08A0 FDP047AN08A0 FDH047AN08 FDH047AN FDP047
Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 92nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDP047AN08A0
FDI047AN08A0
FDH047AN08A0
144oC,
FDH047AN08A0
FDP047AN
FDH047AN08
FDH047AN
FDP047
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF75321D3ST Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75321D3ST
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Untitled
Abstract: No abstract text available
Text: FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low
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FDP8870
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tc150e3
Abstract: KP235 40V 60A MOSFET
Text: FDH038AN08A1 N-Channel PowerTrench MOSFET 75 V, 80 A, 3.8 m Ω Features Applications • R DS ON = 3.5 m Ω (Typ.), VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 125 nC (Typ.), VGS = 10 V • Battery Protection Circuit
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FDH038AN08A1
FDH038AN08A1
O-247
158oC,
tc150e3
KP235
40V 60A MOSFET
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF75645P3, HUF75645S3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 mΩ Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V
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HUF75645P3,
HUF75645S3S
O-220AB
O-263AB
HUF75645P3
HUF75645S3ST
75645P
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PDF
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FDP3672
Abstract: diode marking 41a on semiconductor marking n6
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
O-220AB
FDP3672
diode marking 41a on semiconductor
marking n6
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tc124e
Abstract: No abstract text available
Text: FDP8896_F085 N-Channel PowerTrench MOSFET 30V, 92A, 5.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low
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FDP8896
tc124e
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Untitled
Abstract: No abstract text available
Text: HUF75542P3 October 2013 Data Sheet N-Channel UltraFET Power MOSFET 80 V, 75 A, 14 mΩ Features Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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HUF75542P3
O-220AB
75542P
HUF75542P3
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF75631S3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 33 A, 40 mΩ Packaging Features JEDEC TO-263AB DRAIN FLANGE GATE SOURCE • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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HUF75631S3S
O-263AB
HUF75631S3ST
75631S
HUF75631S3S
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PDF
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Untitled
Abstract: No abstract text available
Text: HUFA75645S3S December 2001 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 mΩ Packaging Features JEDEC TO-263AB DRAIN FLANGE GATE SOURCE • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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HUFA75645S3S
O-263AB
75645S
HUFA75645S3S
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PDF
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FDP047AN08A0
Abstract: FDH047AN08A0 fairchild s1a diode fdp047an
Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 92nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDP047AN08A0
FDI047AN08A0
FDH047AN08A0
O-220AB
O-262AB
O-247
FDH047AN08A0
fairchild s1a diode
fdp047an
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PDF
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67E-3
Abstract: FDI038AN06A0 FDP035AN06A0T FDP038AN06A0 DIODE N20 fdp038an06a0t
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • rDS ON = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDP038AN06A0
FDI038AN06A0
O-220AB
O-262AB
67E-3
FDI038AN06A0
FDP035AN06A0T
DIODE N20
fdp038an06a0t
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PDF
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TC143E
Abstract: T 105 micro 25E3
Text: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP3672
FDP3672
O-220
TC143E
T 105 micro 25E3
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Untitled
Abstract: No abstract text available
Text: HUF76132P3, HUF76132S3S Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. This 6132P advanced process technology 3, achieves the lowest possible on-resistance per silicon area,
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HUF76132P3,
HUF76132S3S
6132P
HUF76
132S3
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118E-2
Abstract: KP120 TC292
Text: HUF76132P3, HUF76132S3S Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. This 6132P advanced process technology 3, achieves the lowest possible on-resistance per silicon area,
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HUF76132P3,
HUF76132S3S
6132P
HUF76
132S3
118E-2
KP120
TC292
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF75842P3 October 2013 Data Sheet N-Channel UltraFET Power MOSFET 150 V, 43 A, 42 mΩ Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.042Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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Original
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HUF75842P3
O-220AB
75842P
HUF75842P3
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PDF
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Untitled
Abstract: No abstract text available
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • rDS ON = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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Original
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FDP038AN06A0
FDI038AN06A0
O-220AB
O-262AB
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PDF
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