DSAFG01
Abstract: No abstract text available
Text: DSAFG01 Tentative page Total pages DSAFG01 Silicon PNP epitaxial planar type For High-frequency Amplifier Marking Symbol A4 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DSAFG01
DSAFG01
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EX-42
Abstract: EX-43T EX-43 EX-44 RX-LS200 43t transistor Sunx EX 42
Text: SERIES Amplifier Built-in Convergent Reflective Photoelectric Sensor EQ-20 PHOTOELECTRIC SENSORS EX-40 EX-40 EQ-30 Reliable Object Detection in Limited Area Conforming to EMC Directive EX 10mm 30mm 50 Distance to convergent point Black substrate 30 Black rubber sheet
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EQ-20
EX-40
EQ-30
100mm,
EX-43)
RT-610
EQ-20
EX-42
EX-43T
EX-43
EX-44
RX-LS200
43t transistor
Sunx EX 42
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Untitled
Abstract: No abstract text available
Text: 353 Convergent Reflective Photoelectric Sensor EX-40 SERIES FIBER SENSORS Related Information •■General terms and conditions. F-17 Glossary of terms / General precautions. P.1359~ / P.1405 Amplifier Built-in ■■Sensor selection guide. P.283~
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EX-40
SUS304)
CX-400
EX-10
EX-20
EX-30
EX-40
CX-440
EQ-30
EQ-500
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N4 MMIC
Abstract: No abstract text available
Text: NGA-489 Product Description 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance
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NGA-489
NGA-489
NGA489
EDS-100375
N4 MMIC
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N4 Amplifier
Abstract: marking n4 mmic NGA-489 amplifier marking n4 N4 MMIC
Text: NGA-489 Product Description 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance
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NGA-489
NGA-489
NGA489
EDS-100375
N4 Amplifier
marking n4 mmic
amplifier marking n4
N4 MMIC
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NGA-486
Abstract: No abstract text available
Text: Product Description Stanford Microdevices NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal perfomance. The heterojunction increases
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NGA-486
NGA-486
EDS-101104
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N4 Amplifier
Abstract: N4 MMIC NGA-489 transistor tl 187
Text: Product Description Stanford Microdevices NGA-489 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 10 GHz with excellent thermal perfomance. The heterojunction increases
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NGA-489
NGA-489
EDS-100375
N4 Amplifier
N4 MMIC
transistor tl 187
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NGA-489
Abstract: No abstract text available
Text: NGA-489 Product Description 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance
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NGA-489
NGA-489
NGA489
EDS-100375
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N4 MMIC
Abstract: marking n4 mmic
Text: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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NGA-486
NGA-486
EDS-101104
N4 MMIC
marking n4 mmic
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N4 MMIC
Abstract: TRANSISTOR BI 243 NGA-486 Sirenza Microdevices, Inc amplifier marking n4 N4 Amplifier
Text: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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NGA-486
NGA-486
EDS-101104
N4 MMIC
TRANSISTOR BI 243
Sirenza Microdevices, Inc
amplifier marking n4
N4 Amplifier
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Untitled
Abstract: No abstract text available
Text: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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NGA-486
NGA-486
EDS-101104
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BF250
Abstract: x4b2 OPA603 kf016f p16hc RB50 016f
Text: * OPA603X CURRENT-FEEDBACK AMPLIFIER "CIRCUIT MODEL" SUBCIRCUIT * * CREATED USING BLOOD,SWEAT AND TEARS ON 10/12/90 AT 09:03AM * REV.B 5/23/91 * REV.C 10/20/92 - SYNTAX ERRORS BCB * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;
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OPA603X
160MA
XP16HC
P16HC
383PF
500MA
XP16HC
BF250
x4b2
OPA603
kf016f
RB50
016f
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N7 thermistor
Abstract: 20/shicoh n7
Text: DATA BOOK Thin Film Components Variable Chip Attenuators SUSUMU CO.,LTD. Variable Chip Attenuators Structure Structure :Combine a NTC at the center of a thin film chip attenuator in parallel. Protection film Thermistor Resistor Resistance film Electrode grounded terminal
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PBX1632S
PXV1220S
PBV1632S
PBV1632S-4dB-N4
20pcs)
PBV1632S-6dB-N4
N7 thermistor
20/shicoh n7
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I 508 V
Abstract: 2N4033 2N4030 2N4030-2N4031 2N4032 2N4032-2N4033 2N40 2N4031 N4030
Text: 2N4030-2N4031 2N4032-2N4033 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030, 2N4031, 2N4032, and 2N4033 are silicon planar epitaxial PNP transistors in Jedec TO39 metal case primarily intended for large signal, low noise industrial applications.
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2N4030-2N4031
2N4032-2N4033
2N4030,
2N4031,
2N4032,
2N4033
I 508 V
2N4030
2N4030-2N4031
2N4032
2N4032-2N4033
2N40
2N4031
N4030
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Untitled
Abstract: No abstract text available
Text: For Immediate Assistance, Contact Your Local Salesperson IS0255 B U R R - BROW N4 E 1 Precision, Powered, Three-Port Isolated INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • RATED 1500Vrms Continuous 2500Vrms for One Minute 100% Tested for Partial Discharge
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IS0255
1500Vrms
2500Vrms
IS0255
17313b5
D031DE4
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4844 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4844 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = 1.8dB, |S2iel2= 9.5dB f=2GHz 2.1 ± 0.1 1.25 ± 0.1 n4 MAXIMUM RATINGS (Ta = 25°C)
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2SC4844
--J50
-j250
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V 904 RL 805
Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures
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BFG520W
BFG520W/X;
BFG520W/XR
OT343
OT343R
BFG520W/X
BFG520W/XR
7110fli
V 904 RL 805
N4 TAM
transistor fp 1016
DIN45004B
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rty 117-5
Abstract: 0709s
Text: TOSHIBA 2SC4842 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4842 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ld B , |S2 iel2= 14dB f=lG H z 2.1 ± 0.1 1.25±0.1 n4 MAXIMUM RATINGS (Ta = 25°C)
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2SC4842
--20mA
--j50
rty 117-5
0709s
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equivalent transistor TT 3043
Abstract: transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308
Text: Philips Semiconductors • 7 1 1 0 fl2 tj □0bT305 7bT B iP H IN Productspecification NPN 9 GHz wideband transistor BFS540 PINNING FEATURES PIN CONFIGURATION DESCRIPTION PIN • High power gain Code: N4 • Low noise figure • High transition frequency 1
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7110fl2tj
BFS540
OT323
MBC370
OT323.
emitte-176
equivalent transistor TT 3043
transistor TT 3043
transistor BI 342 905
LT312
MRC005
RF NPN POWER TRANSISTOR C 10-12 GHZ
k a 431 transistor
Transistor BF 479
BFR540
BTS 308
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iw 1688
Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331
Text: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency
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GG350bfci
BFS540
OT323
UBC870
OT323.
collect-176
iw 1688
7812 philips
227 1112
2t6 551
BFR540
BFS540
UBC870
TRANSISTOR D 1765 738
transistor BF 697
Transistor MJE 5331
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BT 816 transistor
Abstract: PA 1515 transistor 9921 transistor
Text: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure
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BFS540
OT323
OT323
OT323.
BT 816 transistor
PA 1515 transistor
9921 transistor
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transistor BF 697
Abstract: transistor equivalent 0107 NA PJ 1269 bc1323 pj 0266 BFR540 BFS540 025-1 transistor c 4236 2999 npn
Text: Philips Sem iconductors • 7 1 1 D f l2 t j 00bT3D5 VbT ■ P H IN Product specification NPN 9 GHz wideband transistor BFS540 PINNING FEA T U R ES PIN CONFIGURATION PIN • High power gain D ESCRIPTIO N Code: N4 • Low noise figure • High transition frequency
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711Dfl2tj
00bT3D5
BFS540
OT323
MBC870
OT323.
emitt-172
transistor BF 697
transistor equivalent 0107 NA
PJ 1269
bc1323
pj 0266
BFR540
BFS540
025-1
transistor c 4236
2999 npn
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ba7106
Abstract: No abstract text available
Text: PAL and SECAM discriminator, with switch, for use in delay lines BA7106LS The BA7106LS includes a PAL and SECAM discriminator on a single chip. Dimensions Units : mm BA7106LS (SZIP24) The IC contains a glass delay line amplifier, and an amplifier output switch.
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BA7106LS
SZIP24)
BA7106LS
SZIP24
VTH21
hys24
ba7106
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BA7106LS
Abstract: N4 Amplifier GV-28 SZIP24 discriminator 5.5 Mhz ba7106
Text: BA7106LS PAL and SECAM discriminator, with switch, for use in delay lines The BA7106LS includes a PAL and SECAM discriminator on a single chip. Dimensions Units: mm BA7106LS (SZIP24) The IC contains a glass delay line amplifier, and an amplifier output switch.
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BA7106LS
SZIP24
BA7106LS
SZIP24)
0013bQl
Hys24
ZIN12
vin12
vth21
N4 Amplifier
GV-28
discriminator 5.5 Mhz
ba7106
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