Untitled
Abstract: No abstract text available
Text: MECHANICAL DATA MPSI004 – DECEMBER 1997 BKS R-SIMM-N72 SINGLE IN-LINE MEMORY MODULE 0.055 (1,39) 0.045 (1,15) 4.256 (108,11) 4.244 (107,81) 0.125 (3,18) TYP 0.856 (21,74) 0.844 (21,44) 0.050 (1,27) 0.128 (3,25) 0.120 (3,05) 0.040 (1,02) TYP 0.010 (2,54) MAX
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MPSI004
R-SIMM-N72)
4175450/A
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MPSI001
Abstract: No abstract text available
Text: MECHANICAL DATA MPSI001 – JANUARY 1997 BJ R-PSIM-N72 SINGLE-IN-LINE MEMORY MODULE 4.255 (108,08) 0.054 (1,37) 0.047 (1,19) 4.245 (107,82) 0.125 (3,18) TYP 0.050 (1,27) 0.040 (1,02) TYP 0.010 (0,25) MAX 0.128 (3,25) 0.120 (3,05) 0.400 (10,16) TYP 0.705 (17,91)
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MPSI001
R-PSIM-N72)
4088178/A
MPSI001
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Untitled
Abstract: No abstract text available
Text: MECHANICAL DATA MCSI004B – NOVEMBER 1997 BK R-PSIM-N72 SINGLE-IN-LINE MEMORY MODULE (SIMM) 0.054 (1,37) 0.047 (1,19) 4.255 (108,08) 4.245 (107,82) 0.125 (3,18) TYP 1.005 (25,53) 0.995 (25,27) 0.050 (1,27) 0.128 (3,25) 0.120 (3,05) 0.010 (0,25) MAX 0.400 (10,16) TYP
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MCSI004B
R-PSIM-N72)
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1E14
Abstract: 2E12 FRL130R4 JANSR2N7272 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from
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JANSR2N7272
FRL130R4
1000K
1E14
2E12
FRL130R4
JANSR2N7272
Rad Hard in Fairchild for MOSFET
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100v 23A P-Channel MOSFET
Abstract: 1E14 2E12 FRF250R4 JANSR2N7294
Text: JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 23A, 200V, rDS ON = 0.115Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from
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JANSR2N7294
FRF250R4
1000K
100v 23A P-Channel MOSFET
1E14
2E12
FRF250R4
JANSR2N7294
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FRL230
Abstract: 1E14 2E12 FRL230R4 JANSR2N7275 FRL-230
Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from
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JANSR2N7275
FRL230R4
1000K
FRL230
1E14
2E12
FRL230R4
JANSR2N7275
FRL-230
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B66433-G-X172
Abstract: B66433
Text: ER 28/17/11 Core B66433 ● Round center leg particularly suitable for use of thick winding wires or tapes ● For compact winding design with low leakage inductance ● ER cores are supplied as single units 16,9±0,2 12,6±0,3 28,55±0,55 = 0,88 mm–1 = 75,0 mm
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B66433
FEK0318-4
B66433-G-X172
B66433-G-X172
B66433
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75307D
Abstract: 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334
Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75307P3,
HUF75307D3,
HUF75307D3S
43cts
75307D
75307
transistor 75307D
TA75307
AN9321
HUF75307D3
HUF75307D3S
HUF75307D3ST
HUF75307P3
TB334
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Untitled
Abstract: No abstract text available
Text: Intrinsic Safety HAZARDOUS AREA SAFE AREA 3 Introduction Intrinsically safe equipment is defined as “equipment and wiring which is incapable of releasing sufficient electrical or thermal energy under normal or abnormal conditions to cause ignition of a specific hazardous atmospheric mixture
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ISA-RP12
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P25 PNP
Abstract: SO4401 2369 BCV27 BCV47
Text: F Z J SGS-THOMSON SURFACE MOUNT DEVICES ^ 7 # RföD [^©[I[L[i gra©K!l D O S GENERAL PURPOSE & INDUSTRIAL NPN DARLINGTONS Type VCBO v CEO •c ptot hpE @ (C 1 VCE VCE (sat @ >C ' 'B fT typ Marking max BCV27 BCV47 SO 517 (V) (V) (mA) (mW) 40 80 40 30 60
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BCV27
BCV47
P25 PNP
SO4401
2369
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Untitled
Abstract: No abstract text available
Text: Philips S em iconductors bb53T31 O Q S llQ T fils M A P X 2 GHz RF power transistor ^ Prelim inary specification BFG11; BFG11/X *1^— N AMER PHILIPS/DISCRETE b'lE » PINNING DESCRIPTION NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation
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bb53T31
BFG11;
BFG11/X
BFG11:
BFG11/X:
OT143.
BFG11
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TMPT6429
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SP RA GU E. ^3 D • 0504330 0003b0L 4 ■ AL6R S E M I C O N D S / ICS 93 D 0 3 6 0 6 J . SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO 40 30 40 60 40 40 25 40 30 25
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0003b0L
TMPT2221A
TMPT2222
TMPT2222A
TMPT2484
TMPT3903
TMPT3904
TMPT4124
TMPT4401
TMPT5088
TMPT6429
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MN101C527
Abstract: No abstract text available
Text: MNI 0 IC527 - FCR8.0MC5 Fig.a~e Udd= 5 [U] G- 0 Typical a. U1H/UIL HUl IMN 5AQ—3 V Uln : , 5Ù6 -V0- -•„4 ,UIL“Ì - 1 1 0 r - ^ Ì - ^ 4 - — U2H/U^Lj EU] • 5t8- 5t 8- 5t7U2H V . ,U2i~'^— i— i C. F Q5C [/] 1 r-Q4 1 , ~Q4 ,
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MNI0IC527
MN101C527
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Untitled
Abstract: No abstract text available
Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75329D3,
HUF75329D3S
13e-1
26e-2
HUF75329D
80e-3
00e-2
00e-3
60e-2
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Untitled
Abstract: No abstract text available
Text: HUF75337G3, HUF75337P3, HUF75337S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75337G3,
HUF75337P3,
HUF75337S3S
HUF75337
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Untitled
Abstract: No abstract text available
Text: HUF75339G3, HUF75339P3, HUF75339S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75339G3,
HUF75339P3,
HUF75339S3S
98e-1
99e-1
97e-2
HUF75339
00e-3
90e-2
95e-3
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Untitled
Abstract: No abstract text available
Text: HUF75321D3, HUF75321D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75321D3,
HUF75321D3S
HUF75321D
10e-3
72e-2
67e-2
30e-1
49e-1
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n72 m
Abstract: 8815 k S 576 B M37540E8GP 40143
Text: M37540E8GP - 1 FCR4.0MC5 Udd= 5 CU] Fig.cTe 0- 0 Typical a, U I H / U 1 L [U] 11111 4A0—8 V Viri • U1L ~ ‘ C^— ■ r b. U 2 H / U ? L CU] _ UPH Ò-_ V in I c. F o s c .3 .1 -.1 -.3 -.5 400 89 i [/] § -4o8 0- — - V . -•n4 b b — u—
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M37540E8GP
-575-5T
n72 m
8815 k
S 576 B
40143
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Untitled
Abstract: No abstract text available
Text: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75307P3,
HUF75307D3,
HUF75307D3S
HUF75307
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75343P
Abstract: No abstract text available
Text: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75343G3,
HUF75343P3,
HUF75343S3S
48e-1
23e-1
96e-2
HUF75343
15e-3
50e-2
40e-2
75343P
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Untitled
Abstract: No abstract text available
Text: HUF76107P3 Semiconductor Data Sheet February 1999 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUF76107P3
30e-3,
1e-12
1e-10
96e-6
1e6/50)
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75307D
Abstract: No abstract text available
Text: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet March 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75307P3,
HUF75307D3,
HUF75307D3S
HUF75307
75307D
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Untitled
Abstract: No abstract text available
Text: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet June 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs F ile N u m b er 4477.6 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.
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HUF75639G3,
HUF75639P3,
HUF75639S3S
54e-2
98e-1
99e-1
97e-2
HUF75639
95e-3
95e-2
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TL 431 model SPICE
Abstract: Simulation Model tl 431
Text: HUF75309P3, HUF75309D3, HUF75309D3S Semiconductor June 1999 Data Sheet 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75309P3,
HUF75309D3,
HUF75309D3S
HUF75309
TL 431 model SPICE
Simulation Model tl 431
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