KRC101S
Abstract: KRC101
Text: SEMICONDUCTOR KRC101S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking NA No. 1 Item Marking Device Mark NA KRC101S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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KRC101S
OT-23
KRC101S
KRC101
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Transistor hFE CLASSIFICATION Marking CE
Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
Text: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant
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Original
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MMBT2222A
OT-23
OT-23
MMBT2907A)
-55to
Transistor hFE CLASSIFICATION Marking CE
marking 1P sot-23
Application of MMBT2907A
sot-23 1P F
MMBT2222A
MMBT2907A
MARKING 1P
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D2E diode
Abstract: diode d2e RB491D Schottky Diode Marking sot-23 NA MARKING
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diode SOT-23 RB491D Schottky barrier Diodes 3- FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 1+ 2 NA Marking: D2E Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OT-23
RB491D
D2E diode
diode d2e
RB491D
Schottky Diode Marking sot-23
NA MARKING
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PDF
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marking K2 diode
Abstract: MARKING 5D DIODE schottky diode marking A7
Text: DIODE wffife SOT-23/TO-236AB ‘TM PD ’ GENERAL-PURPOSE a n d LOW-LEAKAGE D IO D ES ELECTRICAL CHARACTERISTICS a t T . = 25°C vF Description *rr Max. Max. nA (ns) <PF) 1 ,2 ,3 10 25 4.0 6.0 ANCK VBR Min. Max. Marking (mA) (V) (V) @IF (mA) 1.0 Device Type
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OCR Scan
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OT-23/TO-236AB
TMPD914
TMPD2836
TMPD2838
TMPD4148
TMPD6050
TMPD7000
A8920SLR)
BAV70
BAV99
marking K2 diode
MARKING 5D DIODE
schottky diode marking A7
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PDF
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marking C1
Abstract: TMPTA70 TMPT5401 h2t1
Text: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0
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OCR Scan
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OT-23/TO-236AB
BCW29
BCW30
BCW61A
BCW61B
BCW61C
BCW61D
BCW67A
BCW67B
BCW68F
marking C1
TMPTA70
TMPT5401
h2t1
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PDF
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1403
Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
Text: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.
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OCR Scan
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MMBD1401
OT-23
MMBD1404
UMBD1403
MMBD1405
b50113D
1403
R20 marking
M3325
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PDF
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NXP date code marking
Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
Text: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview
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PMBT2222;
PMBT2222A
O-236AB)
PMBT2222
PMBT2222A
O-236AB
PMBT2907
PMBT2907A
NXP date code marking
marking 1B
marking code v6 SOT23
NXP MARKING SMD IC CODE
SOT23 NXP power dissipation TO-236AB
MARKING CODE SMD IC
PMBT2222A,215
smd code marking .1p
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PDF
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FMMT497
Abstract: MARKING SMD npn TRANSISTOR
Text: Transistors SMD Type High Voltage High Performance Transistor FMMT497 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 NPN silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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FMMT497
OT-23
100mA
250mA
100mA,
250mA,
100MHz
FMMT497
MARKING SMD npn TRANSISTOR
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PDF
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FMMT596
Abstract: smd transistor marking 03
Text: Transistors SMD Type High Voltage Transistor FMMT596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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FMMT596
OT-23
-200V
-100mA,
-10mA
-250mA,
-25mA
-250mA
FMMT596
smd transistor marking 03
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PDF
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FMMT494
Abstract: transistor smd marking BR
Text: Transistors SMD Type Medium Power Transistor FMMT494 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 SOT23 NPN Silicon Planar 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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FMMT494
OT-23
250mA
500mA
250mA,
500mA,
100MHz
FMMT494
transistor smd marking BR
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Product specification FMMT597 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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FMMT597
OT-23
-50mA,
-100mA,
-20mA
-100mA
-50mA
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PDF
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597 smd transistor
Abstract: FMMT597 NA MARKING SOT23 10V-100 PNP POWER TRANSISTOR SOT23 transistor smd marking NA sot-23
Text: Transistors SMD Type High Voltage Transistor FMMT597 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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FMMT597
OT-23
-250V
-50mA,
-100mA,
-20mA
-100mA
-50mA
597 smd transistor
FMMT597
NA MARKING SOT23
10V-100
PNP POWER TRANSISTOR SOT23
transistor smd marking NA sot-23
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC Transistor SMD Type Product specification FMMT596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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FMMT596
OT-23
-100mA,
-10mA
-250mA,
-25mA
-250mA
-100mA
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PDF
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FMMT495
Abstract: No abstract text available
Text: Transistors SMD Type Power High Performance Transistor FMMT495 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 SOT23 NPN silicon planar medium 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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FMMT495
OT-23
250mA
500mA
250mA,
500mA,
100MHz
FMMT495
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC Transistor SMD Type Product specification FMMT593 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 PNP silicon planar 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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FMMT593
OT-23
-250mA,
-25mA
-500mA,
-50mA
-250mA
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PDF
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TRANSISTOR SMD PNP 1A
Abstract: NA MARKING SOT23 FMMT593 transistor smd marking NA sot-23 593 SOT23
Text: Transistors SMD Type High Voltage Transistor FMMT593 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 PNP silicon planar 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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FMMT593
OT-23
-250mA,
-25mA
-500mA,
-50mA
-250mA
TRANSISTOR SMD PNP 1A
NA MARKING SOT23
FMMT593
transistor smd marking NA sot-23
593 SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC Transistor SMD Type Product specification FMMT494 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 SOT23 NPN Silicon Planar 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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Original
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FMMT494
OT-23
250mA
500mA
250mA,
500mA,
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Product specification FMMT634 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Highest current capability SOT23 darlington 0.55 625mW power dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1
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Original
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FMMT634
OT-23
625mW
100mA,
100MHz
500mA,
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PDF
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smd marking 634
Abstract: smd transistor 5k smd transistor MARKING 2A sot23 FMMT634 50K MARKING SOT23 high voltage TRANSISTOR SMD 1a 9 IS920
Text: Transistors SMD Type Power Darlington Transistor FMMT634 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Highest current capability SOT23 darlington 0.55 625mW power dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1
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Original
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FMMT634
OT-23
625mW
100mA,
100MHz
500mA,
smd marking 634
smd transistor 5k
smd transistor MARKING 2A sot23
FMMT634
50K MARKING SOT23
high voltage TRANSISTOR SMD 1a 9
IS920
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PDF
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91A SOT23
Abstract: FMMT591A FMMT491A DSA003699 91A PNP
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591A FMMT591A ISSUE 3 - OCTOBER 1995 FEATURES Low equivalent on resistance RCE sat = 350mΩ at 1A TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 SYMBOL VALUE UNIT VCBO -40 V 0.1 Collector-Emitter Voltage
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Original
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FMMT591A
FMMT491A
100mA
-100mA*
-500mA*
-50mA,
100MHz
91A SOT23
FMMT591A
FMMT491A
DSA003699
91A PNP
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PDF
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MAM25S
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN high-voltage transistor FEATURES PMBT5550 PINNING • Low current max. 300 mA PIN • Low voltage (max. 140 V). 1 2 emitter APPLICATIONS 3 collector DESCRIPTION base • Telephony. DESCRIPTION — 3 NPN high-voltage transistor in a SOT23 plastic package.
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OCR Scan
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PMBT5550
PMBT5401.
MAM25S
MAM25S
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PDF
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MARKING EK SOT-23
Abstract: 30ma 40v npn smd transistor EK BCX41 smd transistor BCX41 EK MARKING SOT23 VCE-100V marking EK
Text: Transistors SMD Type Medium Power Transistor BCX41 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 SOT23 NPN silicon planar 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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Original
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BCX41
OT-23
300mA,
100mA
200mA
20MHz
MARKING EK SOT-23
30ma 40v npn
smd transistor EK
BCX41
smd transistor BCX41
EK MARKING SOT23
VCE-100V
marking EK
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PDF
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smd transistor t6
Abstract: SMD TRANSISTOR MARKING BR BSS63R t6 marking sot23
Text: Transistors SMD Type High Voltage Transistor BSS63R SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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Original
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BSS63R
OT-23
-25mA,
-10mA
-25mA
35MHz
smd transistor t6
SMD TRANSISTOR MARKING BR
BSS63R
t6 marking sot23
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PDF
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Untitled
Abstract: No abstract text available
Text: SMD Type SMD Type Product specification BSS63R SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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Original
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BSS63R
OT-23
-25mA,
-10mA
-25mA
35MHz
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PDF
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