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    NAINA SEMICONDUCTOR Search Results

    NAINA SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NAINA SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10W Zener

    Abstract: 1N2981B 1N2970 1N2970B 1N2971B 1N2972B 1N2973B 1N2974B 1N2975B 1N2976B
    Text: 1N2970 to 1N3015 Naina Semiconductor emiconductor Ltd. Zener Diodes Electrical Characteristics TC = 25OC unless otherwise specified Type number 1N2970B 1N2971B 1N2972B 1N2973B 1N2974B 1N2975B 1N2976B 1N2977B 1N2978B 1N2979B 1N2980B 1N2981B 1N2982B 1N2983B


    Original     		PDF 1N2970 1N3015 1N2970B 1N2971B 1N2972B 1N2973B 1N2974B 1N2975B 1N2976B 1N2977B 10W Zener 1N2981B 1N2970B 1N2971B 1N2972B 1N2973B 1N2974B 1N2975B 1N2976B

    1N3306B

    Abstract: 1N3305 1N3305B 1N3307B 1N3308B 1N3309B 1N3310B 1N3311B 1N3312B 1N3350
    Text: 1N3305 – 1N3350 Naina Semiconductor emiconductor Ltd. Zener Diodes Electrical Characteristics TC = 25OC unless otherwise specified Type number 1N3305B 1N3306B 1N3307B 1N3308B 1N3309B 1N3310B 1N3311B 1N3312B 1N3313B 1N3314B 1N3315B 1N3316B 1N3317B 1N3318B


    Original     		PDF 1N3305 1N3350 1N3305B 1N3306B 1N3307B 1N3308B 1N3309B 1N3310B 1N3311B 1N3312B 1N3306B 1N3305 1N3305B 1N3307B 1N3308B 1N3309B 1N3310B 1N3311B 1N3312B 1N3350

    DO-203AB

    Abstract: No abstract text available
    Text: 25NSF R Naina Semiconductor emiconductor Ltd. Fast Recovery Diodes (Stud Version) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Optional Avalanche Characteristic Electrical Specifications (TE = 250C, unless otherwise noted)


    Original     		PDF 25NSF DO-203AB 203AB DO-203AB

    DO-203AA

    Abstract: No abstract text available
    Text: 16NSF R Naina Semiconductor emiconductor Ltd. Fast Recovery Diodes (Stud Version) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Optional Avalanche Characteristic Electrical Specifications (TE = 250C, unless otherwise noted)


    Original     		PDF 16NSF DO-203AA

    DO-203AA

    Abstract: No abstract text available
    Text: 12NSF R Naina Semiconductor emiconductor Ltd. Fast Recovery Diodes (Stud Version) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Optional Avalanche Characteristic Electrical Specifications (TE = 250C, unless otherwise noted)


    Original     		PDF 12NSF DO-203AA 203AA DO-203AA

    16NSF

    Abstract: No abstract text available
    Text: Naina Semiconductor Ltd. 16NSF R Fast Recovery Diodes, 16A Features • • • • • • Diffused Series Short reverse recovery time Excellent surge capabilities Industrial grade Available in Normal and Reverse polarity Optional Avalanche Characteristic


    Original     		PDF 16NSF DO-203AA

    DO-203AB

    Abstract: No abstract text available
    Text: 70NSF R Naina Semiconductor emiconductor Ltd. Fast Recovery Diodes (Stud Version) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Optional Avalanche Characteristic Electrical Specifications (TE = 250C, unless otherwise noted)


    Original     		PDF 70NSF DO-203AB DO205450 DO-203AB

    12NSF

    Abstract: No abstract text available
    Text: Naina Semiconductor Ltd. 12NSF R Fast Recovery Diodes, 12A Features • • • • • • Diffused Series Short reverse recovery time Excellent surge capabilities Industrial grade Available in Normal and Reverse polarity Optional Avalanche Characteristic


    Original     		PDF 12NSF DO-203AA

    BY397

    Abstract: ba159 diode 500C 550C BA159 diode BA159
    Text: BY397 Naina Semiconductor emiconductor Ltd. Fast Recovery Diode Diode, 3.0A Features • • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability Mechanical Characteristics • Case: Molded Plastic


    Original     		PDF BY397 MIL-STD-202, DO-201AD 201AD DO-27) BY397 ba159 diode 500C 550C BA159 diode BA159

    DO-203AB

    Abstract: No abstract text available
    Text: 40NSF R Naina Semiconductor emiconductor Ltd. Fast Recovery Diodes (Stud Version) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Optional Avalanche Characteristic Electrical Specifications (TE = 250C, unless otherwise noted)


    Original     		PDF 40NSF DO-203AB DO205450 DO-203AB

    804 m

    Abstract: No abstract text available
    Text: 60MDS Naina Semiconductor emiconductor Ltd. Three – Phase Bridge Rectifier Features • • • Easy connections Excellent power volume ratio Insulated type Voltage Ratings TJ = 250C unless otherwise noted Type number Voltage code VRRM, Max. repetitive


    Original     		PDF 60MDS 804 m

    6A10

    Abstract: No abstract text available
    Text: 6A05 A05 - 6A10 Naina Semiconductor emiconductor Ltd. Silicon Rectifier, 6.0A Features • Diffused junction • Low cost • Low reverse leakage current • High current capability & low forward voltage drop • Plastic material carrying UL recognition 94V


    Original     		PDF 1000C 6A10

    Untitled

    Abstract: No abstract text available
    Text: 11 110MDS Naina Semiconductor emiconductor Ltd. Three – Phase Bridge Rectifier Features • • • Easy connections Excellent power volume ratio Insulated type Voltage Ratings TJ = 250C unless otherwise noted Type number Voltage code 110MDS VRRM, Max.


    Original     		PDF 110MDS

    BA159

    Abstract: ba159 diode diode BA159 10A DIODE 1000C 500C
    Text: BA159 Naina Semiconductor emiconductor Ltd. Fast Recovery Diode Diode, 1.0A Features • • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability Mechanical Characteristics • Case: Molded Plastic


    Original     		PDF BA159 MIL-STD-202, 1000C BA159 ba159 diode diode BA159 10A DIODE 1000C 500C

    Untitled

    Abstract: No abstract text available
    Text: 13 130MDS Naina Semiconductor emiconductor Ltd. Three – Phase Bridge Rectifier Features • • • Easy connections Excellent power volume ratio Insulated type Voltage Ratings TJ = 250C unless otherwise noted Type number Voltage code 130MDS VRRM, Max.


    Original     		PDF 130MDS

    t-11300

    Abstract: No abstract text available
    Text: 70MDS Naina Semiconductor emiconductor Ltd. Three – Phase Bridge Rectifier Features • • • Easy connections Excellent power volume ratio Insulated type Voltage Ratings TJ = 250C unless otherwise noted Type number Voltage code VRRM, Max. repetitive


    Original     		PDF 70MDS t-11300

    40NSF

    Abstract: No abstract text available
    Text: 40NSF R Naina Semiconductor emiconductor Ltd. Fast Recovery Diodes (Stud Version) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Optional Avalanche Characteristic Electrical Specifications (TE = 250C, unless otherwise noted)


    Original     		PDF 40NSF DO-20

    1N4007

    Abstract: Naina Semiconductor 1N4007 10A 1N1000
    Text: 1N4007 Naina Semiconductor emiconductor Ltd. General Purpose Rectifier Rectifier, 1.0A Features • • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability Mechanical Characteristics • Case: Molded Plastic


    Original     		PDF 1N4007 MIL-STD-202, 1000C 1N4007 Naina Semiconductor 1N4007 10A 1N1000

    10A10

    Abstract: No abstract text available
    Text: 10A05 A05 - 10A10 Naina Semiconductor emiconductor Ltd. Silicon Rectifier, 10.0A Features • Diffused junction • Low cost • Low reverse leakage current • High current capability & low forward voltage drop • Plastic material carrying UL recognition 94V


    Original     		PDF 10A05 10A10 1000C 10A10

    1N5408

    Abstract: 1N5402 1000C 1050C
    Text: 1N5408 Naina Semiconductor emiconductor Ltd. General Purpose Rectifier Rectifier, 3.0A Features • • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability Mechanical Characteristics • Case: Molded Plastic


    Original     		PDF 1N5408 MIL-STD-202, DO-201AD 201AD DO-27) 1050C 1000C 1N5408 1N5402 1000C 1050C

    Untitled

    Abstract: No abstract text available
    Text: 130NS R Naina Semiconductor Ltd. Standard Recovery Diodes, 130A Features • • • • Diffused Series Industrial grade Available in Normal and Reverse polarity Metric and UNF thread type Electrical Specifications (TE = 25oC, unless otherwise noted) Symbol


    Original     		PDF 130NS 125oC DO-205AA

    Untitled

    Abstract: No abstract text available
    Text: 55NS R Naina Semiconductor emiconductor Ltd. Standard Recovery Diodes (Stud Version) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted)


    Original     		PDF DO-203AB 203AB

    Untitled

    Abstract: No abstract text available
    Text: 6NS R Naina Semiconductor emiconductor Ltd. Standard Recovery Diodes (Stud Version) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted)


    Original     		PDF DO-203AA 203AA

    70NSF

    Abstract: No abstract text available
    Text: 70NSF R Naina Semiconductor Ltd. Fast Recovery Diodes, 70A Features • • • • • Diffused Series Industrial grade Excellent surge capabilities Available in Normal and Reverse polarity Optional Avalanche Characteristic Electrical Specifications (TA = 250C, unless otherwise noted)


    Original     		PDF 70NSF DO-203AB