toshiba emmc
Abstract: 153 ball eMMC memory toshiba 16GB Nand flash emmc THGBM MMC04G toshiba 8GB Nand flash bga 4GB eMMC toshiba THGBM1G5D2EBAI7 toshiba 8GB Nand flash emmc "Manufacturer ID" eMMC
Text: THGBM1GxDxEBAIx TOSHIBA e-MMC Module 1GB / 2GB / 4GB / 8GB / 16GB / 32GB THGBM1GxDxEBAIx Series INTRODUCTION THGBM1GxDxEBAIx series are 1-GB , 2-GB , 4-GB , 8-GB , 16-GB and 32-GB densities of e-MMC Module products housed in 153/169 ball BGA package. This unit is utilized advanced TOSHIBA NAND flash device s and controller chip
|
Original
|
16-GB
32-GB
toshiba emmc
153 ball eMMC memory
toshiba 16GB Nand flash emmc
THGBM
MMC04G
toshiba 8GB Nand flash bga
4GB eMMC toshiba
THGBM1G5D2EBAI7
toshiba 8GB Nand flash emmc
"Manufacturer ID" eMMC
|
PDF
|
sandforce sata controller
Abstract: No abstract text available
Text: Wintec Solid State Drive WxSSxxxG1TA I -D1xx Endure (D1) Series 32GB – 512GB Wintec Solid State Drive 2.5” SATA II WxSSxxxG1TA(I)-D1xx Endure (D1) Series INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO WINTEC INDUSTRIES PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
|
Original
|
512GB
ISO9001-2000
sandforce sata controller
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P rel i m i n a r y P R O D U C T • Maintains the highest level of read and write performance up to 60K IOPS & 500MB/s • AES-256 & 128, ATA & TCG Enter- prise security protocols for auto- matic double encryption at the drive level ensures the best secure data
|
Original
|
500MB/s)
AES-256
Non-512B
SF2500/2600
|
PDF
|
SF-2382VB1-ICB
Abstract: No abstract text available
Text: P R O D U C T SF-2300 Industrial SSD Processors Best-in-class consistent read and write performance up to 500 MB/s & 20K random write IOPS for industrial applications • AES-256 & 128, ATA & TCG Opal security protocols for automatic double encryption at the drive level
|
Original
|
SF-2300
AES-256
512GB
512GB
SF2300
SF-2382VB1-ICB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P R O D U C T • Maintains the highest level of ballanced read and write perfor- mance up to 60K IOPS & 500MB/s • AES-256 & 128, ATA & TCG Enter- prise security protocols for auto- matic double encryption at the drive level ensures the best secure data
|
Original
|
500MB/s)
AES-256
Non-512B
SF2500/2600
|
PDF
|
SF-2382VB1-IC
Abstract: No abstract text available
Text: P reli m i n a r y P R O D U C T SF-2300 Industrial SSD Processors Best-in-class consistent read and write performance up to 500 MB/s & 20K random write IOPS for industrial applications • AES-256 & 128, ATA & TCG Opal security protocols for automatic double encryption at the drive level
|
Original
|
SF-2300
AES-256
512GB
512GB
SF2300
SF-2382VB1-IC
|
PDF
|
SF2400
Abstract: No abstract text available
Text: P rel i m i n a r y P R O D U C T • AES-256 & 128 automatic double encryption at the drive level ensures the best secure data protection • Outstanding Predictive Failure Analysis available through Media Health Test • Supports the latest 2xnm/2ynm MLC flash memory with Toggle/
|
Original
|
AES-256
512GB
SF2400
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P rel i m i n a r y P R O D U C T • AES-256 & 128 automatic double encryption at the drive level ensures the best secure data protection • Outstanding Predictive Failure Analysis available through Media Health Test • Supports the latest 2xnm/2ynm MLC flash memory with Toggle/
|
Original
|
AES-256
512GB
SF2400
|
PDF
|
SF-2281
Abstract: SF-2281VB1-SDC SF-2282VB1-SCC SF2100
Text: P R O D U C T Features • Second generation SSD Processor with enterprise-class features for cost-sensitive client environments • SATA 6Gb/s with NCQ support • Best-in-class, consistent read and write performance 500MB/s, 20K Random Writes IOPS for client
|
Original
|
500MB/s,
AES-256,
128GB
SF2200/2100
SF-2281
SF-2281VB1-SDC
SF-2282VB1-SCC
SF2100
|
PDF
|
SF-2281
Abstract: SF-2281VB1-SDC
Text: P rel i m i n a r y P R O D U C T Features • Second generation SSD Processor with enterprise-class features for cost-sensitive client environments • SATA 6Gb/s with NCQ support • Best-in-class, consistent read and write performance 500MB/s, 20K Random Writes IOPS for client
|
Original
|
500MB/s,
AES-256,
256-pin
128GB
SF2200/2100
SF-2281
SF-2281VB1-SDC
|
PDF
|
SF-2281
Abstract: SandForce SF-2281VB1-SDC
Text: P R E L I M I N A R Y P R O D U C T Features • Second generation SSD Processor with enterprise-class features for cost-sensitive client environments • 6Gb/s SATA III with NCQ support • Best-in-class, consistent read and write performance 500MB/s, 20K
|
Original
|
500MB/s,
AES-256,
256-pin
128GB
SF2200/2100
SF-2281
SandForce
SF-2281VB1-SDC
|
PDF
|
SF-2281VB1-SDC
Abstract: SF-2281
Text: P rel i m i n a r y P R O D U C T Features • Second generation SSD Processor with enterprise-class features for cost-sensitive client environments • SATA 6Gb/s with NCQ support • Best-in-class, consistent read and write performance 500MB/s, 20K Random Writes IOPS for client
|
Original
|
500MB/s,
AES-256,
256-pin
128GB
SF2200/2100
SF-2281VB1-SDC
SF-2281
|
PDF
|
Sandisk NAND Flash memory controller wear leveling
Abstract: Sandisk NAND Flash memory controller wear level SanDisk compactflash datasheet CFG8B sandisk flash drive 16gb GBDriver RA8 SanDisk SSD Sandisk NAND Flash memory controller ecc NAND "read disturb" 1GB sandisk 4GB Nand flash
Text: 1/2 U.DMA6-compatible High-speed Compact Flash (CF) Card for Industrial Use CFG8B Series Conformity to RoHS Directive Equipped with SLC flash memory and highly reliable CompactFlash Card Type I with TDK GBDriver RA8 128MB, 256MB, 512MB, 1GB, 4GB, 8GB, and 16GB
|
Original
|
128MB,
256MB,
512MB,
45MB/s1
28MB/s1
145mA
1GB/2GB/4GB/8GB/16GB
130mA
Sandisk NAND Flash memory controller wear leveling
Sandisk NAND Flash memory controller wear level
SanDisk compactflash datasheet
CFG8B
sandisk flash drive 16gb
GBDriver RA8
SanDisk SSD
Sandisk NAND Flash memory controller ecc
NAND "read disturb" 1GB
sandisk 4GB Nand flash
|
PDF
|
GBDriver RA8
Abstract: ssd led display 16GB Nand flash 2.5 pata drive automatic ticket vending machine cfg8b origin MB SSD controller IC TDK GBDriver 8gb mlc FLASH MEMORY
Text: 1/2 U.DMA6-compatible Parallel ATA (PATA) Solid-State Drive (SSD) for Industrial Use SDG8B Series Conformity to RoHS Directive Equipped with SLC flash memory and highly reliable 2.5-inch IDE solid-state drive with TDK GBDriver RA8 1GB, 2GB, 4GB, 8GB, and 16GB
|
Original
|
45MB/s1
28MB/s1
145mA
1GB/2GB/4GB/8GB/16GB
130mA
GBDriver RA8
ssd led display
16GB Nand flash
2.5 pata drive
automatic ticket vending machine
cfg8b
origin MB
SSD controller IC
TDK GBDriver
8gb mlc FLASH MEMORY
|
PDF
|
|
|
verilog code hamming
Abstract: ebc2opb verilog code hamming 2k bytes Datasheet toshiba NAND Flash MLC gpr 2747 t mlc nand flash lsb msb toshiba MLC nand flash toshiba nand flash NAND flash part number decoder toshiba NAND Flash MLC
Text: Title Page Nand Flash Controller Data Book SA14-2747-05 June 22, 2006 Copyright and Disclaimer Copyright International Business Machines Corporation 2006 All Rights Reserved Printed in the United States of America June 2006 The following are trademarks of International Business Machines Corporation in the United States, or other countries, or
|
Original
|
SA14-2747-05
verilog code hamming
ebc2opb
verilog code hamming 2k bytes
Datasheet toshiba NAND Flash MLC
gpr 2747 t
mlc nand flash lsb msb
toshiba MLC nand flash
toshiba nand flash
NAND flash
part number decoder toshiba NAND Flash MLC
|
PDF
|
TC58DVG02D5TA00
Abstract: toshiba nand plane size
Text: TC58DVG02D5TA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58DVG02D5 is a single 3.3V 1Gbit (1,107,296,256bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
|
Original
|
TC58DVG02D5TA00
TC58DVG02D5
256bits)
1024blocks.
2112-byte
012-09-01A
TC58DVG02D5TA00
toshiba nand plane size
|
PDF
|
TC58DVG02D5
Abstract: No abstract text available
Text: TC58DVG02D5BAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58DVG02D5 is a single 3.3V 1Gbit (1,107,296,256bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
|
Original
|
TC58DVG02D5BAI6
TC58DVG02D5
256bits)
1024blocks.
2112-byte
012-08-01A
|
PDF
|
P-VFBGA67-0608-0
Abstract: toshiba NAND Technology Code
Text: TC58DYG02D5BAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58DYG02D5 is a single 1.8V 1Gbit (1,107,296,256bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
|
Original
|
TC58DYG02D5BAI6
TC58DYG02D5
256bits)
1024blocks.
2112-byte
012-08-01A
P-VFBGA67-0608-0
toshiba NAND Technology Code
|
PDF
|
TC58DYG02D5BAI6
Abstract: P-VFBGA67-0608-0 TC58DYG02D5BAI4 toshiba NAND Technology Code
Text: TC58DYG02D5BAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58DYG02D5 is a single 1.8V 1Gbit (1,107,296,256bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
|
Original
|
TC58DYG02D5BAI6
TC58DYG02D5
256bits)
1024blocks.
2112-byte
012-08-01A
TC58DYG02D5BAI6
P-VFBGA67-0608-0
TC58DYG02D5BAI4
toshiba NAND Technology Code
|
PDF
|
toshiba nand plane number
Abstract: No abstract text available
Text: TC58DVG02D5BAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58DVG02D5 is a single 3.3V 1Gbit (1,107,296,256bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
|
Original
|
TC58DVG02D5BAI4
TC58DVG02D5
256bits)
1024blocks.
2112-byte
012-09-01A
toshiba nand plane number
|
PDF
|
TC58DVG02D5TA00
Abstract: TC58DVG02D5TAI0
Text: TC58DVG02D5TAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58DVG02D5 is a single 3.3V 1Gbit (1,107,296,256bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
|
Original
|
TC58DVG02D5TAI0
TC58DVG02D5
256bits)
1024blocks.
2112-byte
012-09-01A
TC58DVG02D5TA00
TC58DVG02D5TAI0
|
PDF
|
TC58DYG02D5BAI4
Abstract: TC58DVG02D5TA00
Text: TC58DYG02D5BAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58DYG02D5 is a single 1.8V 1Gbit (1,107,296,256bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
|
Original
|
TC58DYG02D5BAI4
TC58DYG02D5
256bits)
1024blocks.
2112-byte
012-09-01A
TC58DYG02D5BAI4
TC58DVG02D5TA00
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Data Sheet Industrial USB Flash Drive Module U-110 Series USB2.0 high speed U-110 Series USB Flash Drive Module 1GByte to 16GByte USB Flash Drive Module provides non-volatile, solid-state storage in a compact design, making it perfectly suited for embedded applications. The standard USB 2.0 interface provides designers with a true plug-n-play storage
|
Original
|
U-110
16GByte
CH-9552
Rev120
|
PDF
|
TC58DV
Abstract: No abstract text available
Text: TC58DVG02D5BAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58DVG02D5 is a single 3.3V 1Gbit (1,107,296,256bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
|
Original
|
TC58DVG02D5BAI6
TC58DVG02D5
256bits)
1024blocks.
2112-byte
012-08-01A
TC58DV
|
PDF
|
