TOSHIBA flash memory
Abstract: Toshiba flash 40hor41h
Text: THNIDxxxxBx Series Rev.1.1 NAND Flash Drive - THNIDxxxxBx Series -OUTLINE The NAND Flash Drive THNIDxxxxBx series is Toshiba’s flash memory drive having IDE interface which features a flash disk controller chip and NAND-type flash memory devices. There are two types of form factors,
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128MB,
192MB,
256MB,
320MB,
384MB,
512MB,
640MB,
1024MB,
1536MB
2048MB
TOSHIBA flash memory
Toshiba flash
40hor41h
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K9HCG08U5M
Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs
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120GB
128MB
256MB
128MB
512MB
K9HCG08U5M
K9WBG08U1M
K9LAG08U0M-PCB0
KMAFN0000M
KMBGN0000A
K9MDG08U5M-PCB0
K4M56323PI
MCCOE32GQMPQ-M
K4M56163PI
movinand
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NAND512W3A 64MB
Abstract: STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B
Text: NAND Flash memories The core element of a compact audio-player is a NAND Flash, smaller than a stamp, which is capable of storing hours of audio files Because NAND Flash offers higher densities and performances at lower cost, it is ideal for multimedia system
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FLNANDF0106
NAND512W3A 64MB
STMicroelectronics NAND256W3A
VFBGA63
NAND08GW3B
USOP48
NAND256W3A
F70 Package
NAND01GW3B
tfbga
NAND01GR3B
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AN1822
Abstract: NAND512W3A 64MB "nand flash memory" fat32 Wear Leveling in Single Level Cell NAND Flash Memory error free nand NAND FLASH 64MB Wear Leveling in Single Level Cell NAND Flash memories leveling FAT32 FLASH TRANSLATION LAYER FTL
Text: AN1822 APPLICATION NOTE Wear Leveling in Single Level Cell NAND Flash Memories This Application Note describes the Wear Leveling algorithm that ST recommends to implement in the Flash Translation Layer FTL software for NAND Flash memories. INTRODUCTION In ST NAND Flash memories each physical block can be programmed or erased reliably over 100,000
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AN1822
AN1822
NAND512W3A 64MB
"nand flash memory" fat32
Wear Leveling in Single Level Cell NAND Flash Memory
error free nand
NAND FLASH 64MB
Wear Leveling in Single Level Cell NAND Flash memories
leveling
FAT32
FLASH TRANSLATION LAYER FTL
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MT29C4G48MAZBBAKQ-48 IT
Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
Text: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)
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168-Ball
MT29C4G48MAZBBAKQ-48
MT29C4G96MAZBBCJG-48
MT29C8G96MAZBBDJV-48
09005aef855512a5
168ball
MT29C4G48MAZBBAKQ-48 IT
MT29C8G96MAZBBDJV-48 IT
mt29c4g96
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K5W1G
Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION
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BR-07-ALL-001
K5W1G
KMCME0000M-B998
k9hbg08u1m
K9MCG08U5M
K5E1257ACM
MC4GE04G5APP-0XA
b998
KMCME0000M
hd161hj
K5D1G
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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TSOP 48 thermal resistance type1
Abstract: MD4811-D512-V3Q18-X toshiba MLC nand flash ER4525 MD4832-D512-V3Q18-X-P diskonchip g4 02-DS-0304-00 Diskonchip md4832-d512-v3q18-x NAND FLASH 64MB
Text: DiskOnChip G3 64MB 512Mb /128MB (1Gb) Flash Disk with MLC NAND and M-Systems’ x2 Technology Data Sheet, June 2004 Highlights DiskOnChip G3 is one of the industry’s most efficient storage solutions, using Toshiba’s 0.13 µm Multi-Level Cell (MLC) NAND flash
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512Mb
/128MB
02-DS-0304-00
TSOP 48 thermal resistance type1
MD4811-D512-V3Q18-X
toshiba MLC nand flash
ER4525
MD4832-D512-V3Q18-X-P
diskonchip g4
02-DS-0304-00
Diskonchip
md4832-d512-v3q18-x
NAND FLASH 64MB
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H27U4G8
Abstract: No abstract text available
Text: APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27 U_S 4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash 4Gb NAND FLASH H27U4G8_6F2D H27S4G8_6F2D Rev 1.4 / OCT. 2010 *ba53f20d-240c* 1 B34416/177.179.157.84/2010-10-08 10:08 APCPCWM_4828539:WP_0000001WP_000000
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0000001WP
H27U4G8
H27S4G8
ba53f20d-240c*
B34416/177
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K9S1208V0M-SSB0
Abstract: MC9328MX1 nandflash M9328MX1
Text: Application Note AN2416/D Rev. 0, 04/2003 Nand Flash Access on the MC9328MX1 Contents 1 2 3 4 Introduction . . . . . . . . . . 1 Hardware Description . . 3 Software Description. . . 9 Timing on MX1 with NAND Flash . . . . . . . . . 23 5 Conclusion . . . . . . . . . . 29
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AN2416/D
MC9328MX1
MC9328MX1ADS
M9329MX1ADS
M9329MX1EVB.
K9S1208V0M-SSB0
MC9328MX1
nandflash
M9328MX1
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smartmedia card
Abstract: "NAND Flash" AN2416 K9S1208V0M-SSB0 MC9328MX1 MC9328MX1RM MC9328MXL MC9328MXLRM MC9328MXS NAND Flash Memory
Text: Freescale Semiconductor Application Note Document Number: AN2416 Rev. 1, 11/2005 NAND Flash Access MC9328MX1, MC9328MXL, and MC9328MXS 1 Abstract Contents This document describes how to access NAND Flash memory from the i.MX through the i.MX processor’s
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AN2416
MC9328MX1,
MC9328MXL,
MC9328MXS
MC9328MX1
MC9328MXL
smartmedia card
"NAND Flash"
AN2416
K9S1208V0M-SSB0
MC9328MX1
MC9328MX1RM
MC9328MXL
MC9328MXLRM
MC9328MXS
NAND Flash Memory
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Untitled
Abstract: No abstract text available
Text: ADVANCED DATASHEET IS34MC01GA08/16 IS34MC01GA08/16 3.3V 1Gb SLC NAND Flash Memory Specification and Technical Notes Page 1 IS34MC01GA08 IS34MC01GA16 128M x 8bit / 64M x 16bit NAND Flash Memory PRODUCT LIST Part Number VCC Range Organization IS34MC01GA08 IS34MC01GA16
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IS34MC01GA08/16
IS34MC01GA08
IS34MC01GA16
16bit
48-TSOP
63-BGA
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NAND FLASH BGA
Abstract: NAND FLASH 64MB AN2416 K9S1208V0M-SSB0 MC9328MX1 MC9328MX1RM MC9328MXL MC9328MXLRM MC9328MXS ale cycle
Text: Freescale Semiconductor Application Note NAND Flash Access MC9328MX1, MC9328MXL, and MC9328MXS 1 Abstract Contents This document describes how to access NAND Flash memory from the i.MX through the i.MX processor’s External Interface Module EIM . It also provides the
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MC9328MX1,
MC9328MXL,
MC9328MXS
MC9328MX1
MC9328MXL
NAND FLASH BGA
NAND FLASH 64MB
AN2416
K9S1208V0M-SSB0
MC9328MX1
MC9328MX1RM
MC9328MXL
MC9328MXLRM
MC9328MXS
ale cycle
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hy27u*08ag5
Abstract: HY27UH08AG5B Hynix 16Gb Nand flash hynix nand NAND FLASH 64MB reset nand flash HYNIX hynix nand edc spare area code hynix nand flash 1.8v 4Gb
Text: 1 HY27UH08AG5B Series 16Gbit 2Gx8bit NAND Flash 16Gb NAND FLASH HY27UH08AG5B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UH08AG5B
16Gbit
HY27UH08AG5B
hy27u*08ag5
Hynix 16Gb Nand flash
hynix nand
NAND FLASH 64MB
reset nand flash HYNIX
hynix nand edc spare area code
hynix nand flash 1.8v 4Gb
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Untitled
Abstract: No abstract text available
Text: EN71SN10E EN71SN10E 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 256-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage
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EN71SN10E
256-Mbit
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Untitled
Abstract: No abstract text available
Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage
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EN71SN10F
512-Mbit
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Untitled
Abstract: No abstract text available
Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage
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EN71SN10F
512-Mbit
16bit
16bit
32Down
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Untitled
Abstract: No abstract text available
Text: EN71SN10E EN71SN10E 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 256-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage
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EN71SN10E
256-Mbit
16bit
16bit
32cations.
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Untitled
Abstract: No abstract text available
Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage
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EN71SN10F
512-Mbit
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Untitled
Abstract: No abstract text available
Text: EN71SN10E EN71SN10E 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 256-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage
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EN71SN10E
256-Mbit
16bit
16bit
32cations.
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PDF
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Untitled
Abstract: No abstract text available
Text: EN71SN10E EN71SN10E 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 256-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage
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EN71SN10E
256-Mbit
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Untitled
Abstract: No abstract text available
Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage
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EN71SN10F
512-Mbit
16bit
16bit
32Down
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VFBGA63
Abstract: NAND01GW3B NAND01GW4B NAND01G-B NAND01GR3B NAND01GR4B NAND02G-B FBGA63 NAND02GR3B2A st nand
Text: NAND01G-B NAND02G-B 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Feature summary ● ● ● ● ● ● ● High Density NAND Flash memories – Up to 2 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass
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NAND01G-B
NAND02G-B
Byte/1056
64Mbit
VFBGA63
TFBGA63
TSOP48
NAND01GW3B
NAND01GW4B
NAND01G-B
NAND01GR3B
NAND01GR4B
NAND02G-B
FBGA63
NAND02GR3B2A
st nand
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SAMSUNG MCP
Abstract: MCP NAND
Text: Preliminary MCP MEMORY K5P2881BCM Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. - 128M NAND Flash C-die - 8M SRAM B-die
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K5P2881BCM
16Mx8)
512Kx16)
69-Ball
SAMSUNG MCP
MCP NAND
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