NANYA LPDDR2 SPEC Search Results

NANYA LPDDR2 SPEC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
hynix lpddr2 Abstract: ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory Text: 2Gb LPDDR2-S4 SDRAM NT6TL64M32AQ Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS, /DQS is transmitted/received with data, to be used in capturing data at the receiver  Differential clock inputs (CK and /CK)	Original	NT6TL64M32AQ -64Meg 64M32 -168-ball hynix lpddr2 ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory	PDF
NT6SM16M16AG-S1 Abstract: lpddr2-s2 NT6SM16M16AG NT6SM16M16AG-S1I 128T64 Text: 256Mb LPSDR SDRAM NT6SM16M16AG NT6SM8M32AK Feature Options Fully synchronous; all signals registered on positive edge of z z Marking VDD /VDDQ system clock -1.8V/1.8V M Internal, pipelined operation; column address can be changed z z every clock cycle	Original	256Mb NT6SM16M16AG NT6SM8M32AK -16Meg -54-ball -90-ball x13mm) 16M16 NT6SM16M16AG-S1 lpddr2-s2 NT6SM16M16AG-S1I 128T64	PDF
A1930 Abstract: No abstract text available Text: 256Mb LPSDR SDRAM NT6SM8M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle	Original	256Mb NT6SM8M32AK -16Meg 16M16 A1930	PDF
Lpddr2 Idd7 Abstract: 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1 Text: 512Mb LPSDR SDRAM NT6SM16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle	Original	512Mb NT6SM16M32AK -16Meg -90-ball x13mm) 16M32 Lpddr2 Idd7 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1	PDF
NT6SM32M16AG-S1 Abstract: NT6SM16M32 128M32 NT6SM16M32AK NT6SM32M16AG Lpddr2 Idd1 8M32R NT6SM16M32AK-S1 lpddr2 layout lpddr2 256mb Text: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of  Marking VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed	Original	512Mb NT6SM32M16AG NT6SM16M32AK NT6SM16M32RAK -32Meg -16Meg -54-ball -90-ball x13mm) 32M16 NT6SM32M16AG-S1 NT6SM16M32 128M32 Lpddr2 Idd1 8M32R NT6SM16M32AK-S1 lpddr2 layout lpddr2 256mb	PDF
Lpddr2 Idd7 Abstract: COMMAND42 lpddr2 256mb lpddr2 layout NT6SM32M16AG-S2 LPDDR2 1Gb Memory NT6SM16M32 Text: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed	Original	512Mb NT6SM32M16AG NT6SM16M32AK NT6SM16M32RAK -32Meg -16Meg -54-ball -90-ball x13mm) 32M16 Lpddr2 Idd7 COMMAND42 lpddr2 256mb lpddr2 layout NT6SM32M16AG-S2 LPDDR2 1Gb Memory NT6SM16M32	PDF
Lpddr2 Idd7 Abstract: Jedec lpddr2 216-ball LPDDR 8Gb lpddr2-s2 Text: 256Mb LPSDR SDRAM NT6SM8M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle	Original	256Mb NT6SM8M32AK -16Meg -54-ball -90-ball x13mm) 16M16 Lpddr2 Idd7 Jedec lpddr2 216-ball LPDDR 8Gb lpddr2-s2	PDF
NTC 200-9 Abstract: a2240 128M16 A1930 NT6SM16M32 Text: 512Mb LPSDR SDRAM NT6SM16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle	Original	512Mb NT6SM16M32AK -16Meg 16M32 NTC 200-9 a2240 128M16 A1930 NT6SM16M32	PDF
NT6DM16M16AD-T1 Abstract: 64M32 HP 3458 NT6DM16M16AD-T1I Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ	Original	256Mb NT6DM16M16AD NT6DM8M32AC -16Meg 16M16 NT6DM16M16AD-T1 64M32 HP 3458 NT6DM16M16AD-T1I	PDF
lpddr2 256mb Abstract: NT6DM8M32AC-T1 NT6DM16M16AD NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2 Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ	Original	256Mb NT6DM16M16AD NT6DM8M32AC -16Meg 16M16 lpddr2 256mb NT6DM8M32AC-T1 NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2	PDF
Untitled Abstract: No abstract text available Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver  Differential clock inputs (CK and /CK)	Original	256Mb NT6DM16M16AD NT6DM8M32AC -16Meg 16M16	PDF
NT6DM16M Abstract: No abstract text available Text: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with Marking  VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver	Original	512Mb NT6DM32M16AD NT6DM16M32AC -32Meg 32M16 -16Meg 16M32 NT6DM16M	PDF
NT6DM32M16AD-T1 Abstract: NT6DM32M16AD NT6DM16M32AC-T1 NT6DM16M32AC NT6DM16M32AC-T3 216-ball NT6DM32M16AD-T3 256M16 lpddr2 256mb lpddr2 layout Text: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with Marking  VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver	Original	512Mb NT6DM32M16AD NT6DM16M32AC -32Meg -16Meg -60-ball -90-ball NT6DM32M16AD-T1 NT6DM16M32AC-T1 NT6DM16M32AC NT6DM16M32AC-T3 216-ball NT6DM32M16AD-T3 256M16 lpddr2 256mb lpddr2 layout	PDF
LPDDR 8Gb Abstract: lpddr2 256mb NT6DM32M16AD-T1 NT6DM32M16AD nanya lpddr2 spec Text: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with Marking  VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver	Original	512Mb NT6DM32M16AD NT6DM16M32AC -32Meg -16Meg -60-ball -90-ball LPDDR 8Gb lpddr2 256mb NT6DM32M16AD-T1 nanya lpddr2 spec	PDF

NT6TL32M Abstract: No abstract text available Text: 512Mb LPDDR2-S4 SDRAM NT6TL16M32AQ/ NT6TL32M16AQ Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS,  is transmitted/received with data, to be used in capturing data at the receiver 	Original	512Mb NT6TL16M32AQ/ NT6TL32M16AQ NT6TL32M	PDF
NT6TL128M32AQ-G1 Abstract: NT6TL256T32 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 NT6TL128M32 hynix lpddr2 NT6TL128T64AR-G0 NT6TL256 NT6TL128T64AR-G1I NT6TL256T32AQ-G2 Text: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver	Original	NT6TL128M32AI /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR NT6TL128M32AQ-G1 NT6TL256T32 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 NT6TL128M32 hynix lpddr2 NT6TL128T64AR-G0 NT6TL256 NT6TL128T64AR-G1I NT6TL256T32AQ-G2	PDF
NT6TL256T32AQ Abstract: NT6TL128M32AI hynix lpddr2 NT6TL128M32AQ-G1 LPDDR2 1Gb Memory NT6TL128M32 Hynix 4Gb LPDDR2 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 Elpida LPDDR2 Memory Text: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver	Original	NT6TL128M32AI /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR NT6TL256T32AQ hynix lpddr2 NT6TL128M32AQ-G1 LPDDR2 1Gb Memory NT6TL128M32 Hynix 4Gb LPDDR2 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 Elpida LPDDR2 Memory	PDF