HB211
Abstract: No abstract text available
Text: MITSUBISHI LSIs {DRAM MODULE MH1 M08B0AJ-6,-7,-8/ MH1 M08B0AJA-6,-7,-8 FAST PAGE MODE 8388608-BIT 1048576-WORD BY 8-BIT)DYNAMIC RAM DESCRIPTION The M H 1M 08B 0A J/JA is 1048576- word x 8 - bit dynamic RAM and consists of tw o industry standard 1M x 4 dynamic
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M08B0AJ-6
M08B0AJA-6
8388608-BIT
1048576-WORD
MH1M08B0AJ/JA-6
MH1M08B0AJ/JA-7
1M08B0AJ
MH1M08B0AJ
MH1M08B0AJA
8388608-BIT
HB211
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1m0880
Abstract: No abstract text available
Text: MITSUBISHI LS Is {DRAM MODULE FAST PAGE MODE DYNAMIC RAM 1M X 8 O M BIT 8 1 Max. Access Type name Load memory time Outward dimensions Data sheet W x H x D mm) page (ns) MH1M08B0AJ-6 ★ 60 MH1M08B0AJ-7 ★ 70 MH1M08B0AJ-8 ★ 80 MH1M08B0AJA-6 ★ 60 MH1M08B0AJA-7
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MH1M08B0AJ-6
MH1M08B0AJ-7
MH1M08B0AJ-8
MH1M08B0AJA-6
MH1M08B0AJA-7
MH1M08B0AJA-8
M5M44400BJ
M08B0AJ-6
M08B0AJA-6
8388608-BIT
1m0880
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Untitled
Abstract: No abstract text available
Text: Y'~Swö>S>H' t_S‘s MH1 M08B0AJ-6,-7,-8/ MH1M08B0AJA-6,-7,-8 FAST PAGE MODE 8388608-BIT 1048576-WORD BY 8-BiT DYNAMIC RAM DESCRIPTION The M H 1M 0 8 B 0 A J /J A is 1 0 4 8 5 7 6 -w ord x 8 - bit dynamic PIN CONFIGURATION(TOP VIEW) (Single side] o 3AM and consists o f tw o industry standard 1M x 4 dynamic
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M08B0AJ-6
MH1M08B0AJA-6
8388608-BIT
1048576-WORD
MH1M08B0AJ-6
M08B0AJA-6
08B0AJ-6
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DYNAMIC RAM CROSS REFERENCE
Abstract: No abstract text available
Text: O «—1o * «o‘s MH4M08B0NJ-6,-7,-8/ MH4M08B0JA-6,-7,-8 FAST PAGE MODE 33554432-BIT 4194304-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] The M H 4 M 0 8 B 0 N J /J A is 4 1 9 4 3 0 4 word x 8 bit dynamic ^A M and consists o f eight industry standard 4M x 1 dynamic
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MH4M08B0NJ-6
MH4M08B0JA-6
33554432-BIT
4194304-WORD
DYNAMIC RAM CROSS REFERENCE
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st136
Abstract: No abstract text available
Text: M IT S U B IS H I LSIs MH1M08A2J-8,-10,-12/ MHlM08A2JA-8,-10,-12 S T A T IC C O L U M N M O D E 1 0 4 8 5 7 6 - W 0 R D B Y 8 - B IT D Y N A M IC R A M DESCRIPTION The M H 1 M 0 8 A 2 J , JA is 1 0 4857 6 word x 8 bit dynam ic PIN CONFIGURATION TOP VIEW
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MH1M08A2J-8
MHlM08A2JA-8
M5M41002AJ
M5M410Q2AJ
MH1M08A2J-8,
12/MH1M08A2JA-8,
12/MH1M08A2
st136
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M5M44100BJ
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH4M09B0NJ-6,-7,-8/ MH4M09B0JA-6,-7,-8 FAST PAGE MODE 37748736-BIT 4194304-WORD BY 9-BIT DYNAMIC RAM DESCRIPTION The M H 4 M 0 9 B 0 N J /J A is 4 1 9 4 3 0 4 - w ord x 9 - bit dynamic RAM. This consists o f nine industry standard 4M x 1 dynamic
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MH4M09B0NJ-6
MH4M09B0JA-6
37748736-BIT
4194304-WORD
MH4M09B0NJ/AJ-6
MH4M09B0NJ/AJ-7
09B0NJ/AJ-8
4194304-WQRD
M5M44100BJ
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs DRAM MODULE MH4M08B0NJ-6,-7,-8/ MH4M08B0JA-6,-7,-8 FAST PAGE MODE 33554432-BIT(4194304-WORD BY 8-BIT )DYNAMIC RAM DESCRIPTION The MH4M08B0NJ/JA is 4194304-word x 8 - bit dynamic RAM and consists of eight industry standard 4M x 1 dynamic RAMs in SOJ.
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MH4M08B0NJ-6
MH4M08B0JA-6
33554432-BIT
4194304-WORD
MH4M08B0NJ/JA
MH4M08B0NJ/JA-6
MH4M08B0NJ/JA-7
MH4M08B0NJ
MH4M08B0JA
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Untitled
Abstract: No abstract text available
Text: MFC M C-421000B8 1 ,0 4 8 ,5 7 6 X 8-BIT c m o s d y n a m ic r a m m o d u le NEC Electronics Inc. PRELIM IN A RY INFORMATION Description Pin Configurations The MC-421000B8 isa nibble-mode 1,048,576-word by 8-bit dynamic R A M module designed to operate from a
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MC-421000B8
576-word
/uPD421001
C-421000B8
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00D05
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH1M09AOJ-8,-10,-12/ MHlM09A0JA-8,-10,-12 FAST PAGE MODE 1048576-W 0RD BY 9-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION TOP VIEW The M H 1M 09A0J, J A is 1048576 word x 9 b it dynam ic RAM and consists o f nine industry standard 1M x 1 d y
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048576-W
09A0J,
MH1M09A
MHlM09A0J
M5M41000AJ
M5M41000AJ
-12/MH1M09A0JA-8,
1O48576-W
MH1M09A0J-8,
12/MH1M09A0
00D05
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42E » • 7 ^ 4 1 4 2 QG1DSQ7 7 E3SMGK KMM536512B DRAM MODULES i 5 1 2 K X 3 6 DRAM S IM M Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KM M 536512B- 7 • • • • • • • tR A C tC A C tR C 130ns 70ns
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KMM536512B
536512B-
130ns
KMM53651
150ns
2B-10
536512B
20-pin
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is M H 1 M 8 A A J - M H 1 M 8 A A J A 6 - , - 6 , 7 - , - 7 , 8 - , - 8 , 1 - 1 / FAST PAGE MODE 1048576- WORD BY 8 - BIT DYNAMIC RAM DESCRIPTION The M H 1 M 0 8 A 0 A J , J A is 1 0 4 8 5 7 6 -w ord x 8 - bit dynamic PIN CONFIGURATION TOP VIEW
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MH1M08A0AJ
10/MH1M08A0AJA-
1048576-WORD
MH1M08A0AJ-
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSlS MH1M09A0AJ - 6, - 7, - 8, - 10/ MH1M09A0AJA- 6,- 7,- 8, - 10 FAST PAGE MODE 1048576-WORD BY 9 - BIT DYNAMIC RAM DESCRIPTION The M H 1M 09A 0A J, JA is 1 0 4 8 5 7 6 -word x 9 - bit dynamic PIN CONFIGURATION TOP VIEW RAM and consists of two industry standard 1 M x 4 dynamic
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MH1M09A0AJ
MH1M09A0AJA-
1048576-WORD
09A0A
10/MH1M09A0AJA-
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M H 2 M 0 4 B 1 J - 7 , - 8 M H 2 M 0 4 B 1 J A , - 1 - 7 , - 8 / , - 1 NIBBLE MODE 1 0 4 8 5 7 6 -W 0 R D BY 8 -B IT DYNAMIC RAM DESCRIPTIO N The M H 2M 04B 1 J, JA is 1 0 4857 6 word x 8 bit dynamic PIN C O N F IG U R A T IO N TOP VIEW
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MH2M04B1J-7
10/MH2M04B1J
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Untitled
Abstract: No abstract text available
Text: bPM^ö 25 OOISTMS & • 3 e! E D MITSUBISHI LSIs MH1M08A0J-8, -10, •12/ MH1M08AOJA-8, -10,-12 PAST PAGE MODE 1 0 4 8 5 7 6 -W 0 R D BY 8-BIT DYNAMIC RAM MITSUBISHI DESCRIPTION The MH1M08A0J, J A is 1048576 word x 8 bit dynamic RAM and consists of eight industry standard 1M x 1 dy
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MH1M08A0J-8,
MH1M08AOJA-8,
MH1M08A0J,
12fl2S
-12/MH1M08A0JA-8,
048576-W
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DIN 3852-1
Abstract: C3852 X2816C X2816CI x2816 3852P
Text: XICOR INC SEE D • *^41743 □□□3522 hT3 ■ XIC [¿ E B P X2816C 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM 7 ^ -/3 -^ 16K FEATURES DESCRIPTION • 90 ns Access Time • SIMPLE Byte and Page Write —Single 5 Volt Supply — No External High Voltages or V p p Control
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0aa35Â
X2816C
16-Byte
X2816C
DIN 3852-1
C3852
X2816CI
x2816
3852P
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diode ja8
Abstract: 128Kbx8 NC JA8 capacitor
Text: SGS-THOMSON M 48T128Y M 48T128V ra » 1 0 J M M g S 3.3V-5V 1Mbit (128Kb x 8 TIMEKEEPER® SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCK, POWER-FAILCONTROL CIRCUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS
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48T128Y
48T128V
128Kb
M48T128V:
diode ja8
128Kbx8
NC JA8 capacitor
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Untitled
Abstract: No abstract text available
Text: £ jJ S G S -T H O M S O N 0 » IIL IM W 1 § § M 27C 256B CMOS 256K (32K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA
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27C256B
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mitsubishi cab
Abstract: M08B1 J-10 MH1M08B1J-7 MH1M08B1J-8 MH1M08B1JA-7
Text: M IT S U B IS H I L S I* M H1M 08B1J-7, -8, -10/ MH1M08B1J A-7, -8,-1 0 N IB B L E M O D E 1 0 4 8 5 7 6 - W 0 R D B Y 8 - B IT D Y N A M IC R A M DESCRIPTIO N The MH1M08B1J, JA is 1048576 word x 8 bit dynamic RAM and consists of eight industry standard 1M x 1 dy
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MH1M08B1J-7,
MH1M08B1J
1048576-W0RD
MH1M08B1
MHIM08B1
MH1M08BIJA-8
mitsubishi cab
M08B1
J-10
MH1M08B1J-7
MH1M08B1J-8
MH1M08B1JA-7
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is DRAM MODULE FAST PAGE MODE DYNAMIC RAM 4M 36i 9 O U M BIT Max. Access Type name time Load memory Outward dimensions Data sheet W x H x D (m m ) page (ns) MH4M9B0DJA-6 * 60 MH4M9B0DJA-7 ★ 70 M H4M9B0D JA-8 * 80 M 5M44100BJ x 9 COMMON DATA
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5M44100BJ
37748736-BIT
4194304-WORD
7748736-BIT
37748736-BIT
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RAS 0910
Abstract: MH25609-10 5M4256 MH25609JA-85 MH25609J-10 MH25609-12 5609 c m5m4256 RASH MH25609J-85
Text: M IT S U B IS H I LSIs M H 2 5 6 0 9 J-8 5 , -1 0 ,- 1 2 ,- 1 5 / M H 2 5 6 0 9 JA-8 5 , -1 0 ,- 1 2 ,- 1 5 PA G E M O D E 2 6 2 1 4 4 -W O R D B Y 9 -B IT D Y N A M IC R A M DESCRIPTIO N The M H 25 609 J, JA is 2 6 2 1 4 4 word x 9 b it dynam ic R A M PIN C O N F IG U R A T IO N TOP V IE W
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MH25609J-85
MH25609JA-85
262144-WORD
MH25609J,
MH25609JA
MH25609J
tim85,
Note19
RAS 0910
MH25609-10
5M4256
MH25609J-10
MH25609-12
5609 c
m5m4256
RASH
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27C210
Abstract: 27C220 27C240 NM27C240 27C280
Text: II_ D E M IC O N D U C T D R tm NM27C240 4,194,304-Bit 256k x 16 High Performance CMOS EPROM General Description Features The NM27C240 is a high performance Electrically Program mable UV erasable ROM (EPROM). It contains 4,194,304 bits config ured as 256k x 16 bits. It is offered in both erasable versions for
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NM27C240
304-Bit
NM27C240
40-pin
44-pin
27C210
27C220
27C240
27C280
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chn 809
Abstract: chn 809 ST Transistor TT 2246 transistor chn 037 MO40 TT 2246 transistor capacitor JA8 KMA Series 232 pin diagram of BC 547 SABRE 408
Text: 83C95 T e chn o log y, Inco rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters And AUI PRELIMINARY October 1994 S E E Q A u to D U P L E X D esignation Symbol indentifies product as AutoDUPLEX device. D escription The 83C95 is a highly integrated analog interface 1C for
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83C95
10BASE-T
83C95
10BASET)
10BASET
chn 809
chn 809 ST
Transistor TT 2246
transistor chn 037
MO40
TT 2246 transistor
capacitor JA8
KMA Series 232
pin diagram of BC 547
SABRE 408
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM4216C258/L/F, KM4216V258/I-/F 256K 16 Bit CM OS Video RAM x FEATURES GENERAL DESCRIPTION Dual port Architecture 2S6K x 16 bits RAM port 512 x 16 bits SAM port Performance range: _ t-• —_ _ Speed Parameter — -RAM access tim e tRAC
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KM4216C258/L/F,
KM4216V258/I-/F
KM4216C/V258
KM4216V258/L/F
20MAX
65TYP
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sp2111
Abstract: SP-2111 plc analog em 231 ADSP-2115-BP-55 marking YJ AM marking code BM 68A
Text: ANALOG DEVICES □ ADSP-2100 Family DSP Microcomputers ADSP-21 xx FUNCTIONAL BLOCK DIAGRAM SUMMARY 16-Bit Fixed-Point DSP Microprocessors with On-Chip Memory Enhanced Harvard Architecture for Three-Bus Performance: Instruction Bus & Dual Data Buses Independent Computation Units: ALU, Multiplier/
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ADSP-2100
ADSP-21
16-Bit
ADSP-2111
BS-100A
S-100A
G-100A
P-68A
sp2111
SP-2111
plc analog em 231
ADSP-2115-BP-55
marking YJ AM
marking code BM 68A
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