Untitled
Abstract: No abstract text available
Text: SSRAM Austin Semiconductor, Inc. 256K x 18 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM, Flow-Through 100-pin TQFP A6 A7 CE\ CE2 NC NC WEH\ WEL\ CE2\ VCC VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A8 A9 FEATURES MARKING -8 -9 -10 A10 NC NC VCCQ VSSQ NC
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AS5SS256K18
AS5SS256K18
AS5SS256K18DQ-8/IT
-40oC
-55oC
125oC
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PSOP-20
Abstract: CS8361 CS8361YDPS7 CS8361YDPSR7 CS8361YDWF16 CS8361YDWFR16
Text: CS8361 5.0 V Dual Micropower Low Dropout Regulator with ENABLE and RESET SO–16L DW SUFFIX CASE 751G 16 1 D2PAK 7–PIN DPS SUFFIX CASE 936H 1 7 PIN CONNECTIONS AND MARKING DIAGRAM 1 VIN NC VTRK GND GND Adj NC ENABLE CS8361 Features • 2 Regulated Outputs
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CS8361
CS8361
r14525
CS8361/D
PSOP-20
CS8361YDPS7
CS8361YDPSR7
CS8361YDWF16
CS8361YDWFR16
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CS8361
Abstract: CS8361YDPS7 CS8361YDPSR7 CS8361YDWF16 CS8361YDWFR16 mst 518 5- pin smd IC 775
Text: CS8361 5.0 V Dual Micropower Low Dropout Regulator with ENABLE and RESET SO–16L DW SUFFIX CASE 751G 16 1 D2PAK 7–PIN DPS SUFFIX CASE 936H 1 7 PIN CONNECTIONS AND MARKING DIAGRAM 1 VIN NC VTRK GND GND Adj NC ENABLE CS8361 Features • 2 Regulated Outputs
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CS8361
CS8361
r14525
CS8361/D
CS8361YDPS7
CS8361YDPSR7
CS8361YDWF16
CS8361YDWFR16
mst 518
5- pin smd IC 775
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431 smd
Abstract: No abstract text available
Text: Back CS8361 5.0 V Dual Micropower Low Dropout Regulator with ENABLE and RESET SO–16L DW SUFFIX CASE 751G 16 1 D2PAK 7–PIN DPS SUFFIX CASE 936H 1 7 PIN CONNECTIONS AND MARKING DIAGRAM 1 VIN NC VTRK GND GND Adj NC ENABLE CS8361 Features • 2 Regulated Outputs
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CS8361
100mA
r14525
CS8361/D
431 smd
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automotive microprocessor
Abstract: No abstract text available
Text: CS8361 5.0 V Dual Micropower Low Dropout Regulator with ENABLE and RESET SO−16L DW SUFFIX CASE 751G D2PAK−7 DPS SUFFIX CASE 936H PIN CONNECTIONS AND MARKING DIAGRAM VIN NC 1 VTRK GND GND Adj NC ENABLE CS8361 Features • 2 Regulated Outputs − Standby Output 5.0 V ± 2%; 100 mA
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CS8361
SO-16L
automotive microprocessor
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smart ups 750 circuit
Abstract: 100 20L A1 diode PSOP-20 CS8361YDPSR7 CS8361YDWF16 CS8361YDWFR16 CS8361 CS8361YDPS7 d2pak-7
Text: CS8361 5.0 V Dual Micropower Low Dropout Regulator with ENABLE and RESET SO−16L DW SUFFIX CASE 751G D2PAK−7 DPS SUFFIX CASE 936H PIN CONNECTIONS AND MARKING DIAGRAM 1 VIN NC VTRK GND GND Adj NC ENABLE CS8361 Features • 2 Regulated Outputs − Standby Output 5.0 V ± 2%; 100 mA
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CS8361
SO-16L
SO-16L
CS8361
CS8361/D
smart ups 750 circuit
100 20L A1 diode
PSOP-20
CS8361YDPSR7
CS8361YDWF16
CS8361YDWFR16
CS8361YDPS7
d2pak-7
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BF840
Abstract: BF841
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF840 BF841 SILICON PLANAR TRANSISTORS N–P–N transistors Marking BF840 = NC BF841 = ND PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
BF840
BF841
C-120
BF840
BF841
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transistor smd marking ND
Abstract: BF840 BF840 data sheet SMD IC MARKING NC BF841 SOT23 marking 828
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BF840 BF841 SILICON PLANAR TRANSISTORS N–P–N transistors Marking BF840 = NC BF841 = ND
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OT-23
BF840
BF841
C-120
transistor smd marking ND
BF840
BF840 data sheet
SMD IC MARKING NC
BF841
SOT23 marking 828
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF840 BF841 SILICON PLANAR TRANSISTORS N–P–N transisto rs Marking BF840 = NC BF841 = ND PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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OT-23
BF840
BF841
C-120
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Untitled
Abstract: No abstract text available
Text: MC34280 Power Supply & Management IC for Handheld Electronic Products FEATURES: http://onsemi.com 32−LEAD LQFP FTB SUFFIX CASE 873A MARKING DIAGRAM MC34280F TB AWLYYWW 32 PIN CONNECTIONS • • • • • • • VMAIN VMAINSW VMAINGND NC LIBAOUT LIBATIN
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MC34280
MC34280/D
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DRCF114Y
Abstract: No abstract text available
Text: DRCF114Y Tentative Total pages page DRCF114Y Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NC Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DRCF114Y
DRCF114Y
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For 2 GHz band low-noise amplification • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3S
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2002/95/EC)
2SC4805G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462G • Package ■ Features • Code SSMini3-F3 • Marking Symbol: Y
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2002/95/EC)
2SD2216G
2SB1462G
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2SA2164G
Abstract: 2SA2164
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2164 Silicon PNP epitaxial planar type For high-frequency amplification • Package Code SSSMini3-F2 Marking Symbol: E M Di ain sc te on na tin nc ue e/ d Features ue
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2002/95/EC)
2SA2164
2SA2164G
2SA2164
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type For low-frequency output amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Marking Symbol: 1S ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SD2413G
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2SD2413G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification • Package ■ Features ■ Marking Symbol: 1S ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SD2413G
2SD2413G
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2SD1511G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511G Silicon NPN epitaxial planar type darlington For low-frequency output amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Marking Symbol: P ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SD1511G
2SD1511G
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2SD2460
Abstract: 2SD24
Text: Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification M Di ain sc te on na tin nc ue e/ d Unit: mm marking • Absolute Maximum Ratings Ta=25˚C 1 Parameter Symbol Ratings Unit 20 V 20 V 15 V 1.5 A 0.7 A 300 mW 150 ˚C
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2SD2460
2SD2460
2SD24
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2164 Silicon PNP epitaxial planar type For high-frequency amplification • Package Code SSSMini3-F2 Marking Symbol: E M Di ain sc te on na tin nc ue e/ d Features Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SA2164
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Untitled
Abstract: No abstract text available
Text: TE CH T35L6432A SYNCHRONOUS BURST SRAM 64K x 32 SRAM FEATURES PIN ASSIGNMENT Top View Package 100-pin QFP 100-pin TQFP MARKING -4.5 -5 -6 -7 -8 Q T Part Number Examples PART NO. Pkg. BURST SEQUENCE T35L6432A-5Q Q Interleaved (MODE=NC or VCC) T35L6432A-5T T
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T35L6432A
100-pin
T35L6432A-5Q
T35L6432A-5T
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T35L6432A
Abstract: No abstract text available
Text: TE CH T35L6432A SYNCHRONOUS BURST SRAM 64K x 32 SRAM FEATURES PIN ASSIGNMENT Top View Package 100-pin QFP 100-pin TQFP MARKING -4.5 -5 -6 -7 -8 Q T Part Number Examples PART NO. Pkg. BURST SEQUENCE T35L6432A-5Q Q Interleaved (MODE=NC or VCC) T35L6432A-5T T
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T35L6432A
100-pin
T35L6432A-5Q
T35L6432A-5T
100-LEAD
T35L6432A
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Untitled
Abstract: No abstract text available
Text: BF840 BF841 SILICON PLANAR TRANSISTORS N -P-N transistors Marking BF840 = NC BF841 = ND PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0 .H Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS BF840 Collector-base voltage open emitter
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OCR Scan
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BF840
BF841
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BF840
Abstract: BF841 transistors marking ND transistors C 828
Text: BF840 BF841 IL SILICON PLANAR TRANSISTORS N -P -N transistors Marking BF840 = NC BF841 = ND PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m _3.0_ 2.8 0.48 0.38 0.14 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2 6 2.4 J1’ .0 2 ! 0.89 0.60 0.40
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BF840
BF841
33c14
BF840
BF841
transistors marking ND
transistors C 828
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Untitled
Abstract: No abstract text available
Text: BF840 BF841 SILICON PLANAR TRANSISTORS N -P -N transistors Marking BF840 = NC BF841 = ND PACKAGE O U TLIN E DETAILS ALL D IM EN SIO N S IN m m 3.0 2.8 0.14 0.09 0.48 1 0.38 1 1 3 0.70 0.50 1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 I 2.4 I1 .
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BF840
BF841
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