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    ND 043 TRANSISTOR Search Results

    ND 043 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ND 043 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N117

    Abstract: 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532
    Text: MIL-S-19500/2B U June 196S SUpEWEDfNG MfL-S-19500/2A 28 May 1963 MfL-S-19500/35B NAVY 3 January 1966 (See 6.2. ) MILITARY SEMICONDUCTOR SPECIF’fCATfON DE VfCE, TRANSISTOR, TYPES 2N117. 2N118, NPN, .WLICON, AND 2N119 LOW-POWER This specification ie ma.~tory


    Original     		PDF MIL-S-19500/2B MfL-S-19500/2A MfL-S-19500/35B 2N117. 2N118, 2N119 2NI17 2N117 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532

    LM 3041

    Abstract: 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076
    Text: I . I .“~ . MILITARY SEMICONDUCTOR DEVICE, SPECIFICATION TRANSJSIT3R, TYPE NPN, GERMANIUM, POWSR ,. 2N326 This 5Pedification is mandatory for use by all Departments and Agencies of lhe Department of Defense. 1. sCOPE 1.1 transistor. 1 This specilic.l ion cover.


    Original     		PDF 2N326 5961-0021-s) LM 3041 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076

    zener 431

    Abstract: 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524 1N5525 1N5526
    Text: 2848352 DIODE TRANSISTOR CO A4 DE|afl4flBS2 DDDGltM 4 INC 84D 00 164 D T ‘ tl- ¿>1 | LOW VOLTAGE AVALANCHE ZENER DIODES These low voltage avalanche zener diodes are specifically designed for low current, low noise applica­ tions. The very sharp knees, low leakages, and low impedances at low currents make them ideal for voltage


    OCR Scan     		PDF 250uA Coefficient01 1N5546 1N6082 1N6083 1N6084 1N6085 1N6086 1N6087 1N6088 zener 431 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524 1N5525 1N5526

    Low Noise Zener Diode

    Abstract: 1N5527 zener 431 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524
    Text: 2848352 AM DIODE BE | 2 0 4 3 3 5 5 TRANSISTOR CO DOGGl t M 84D INC 00 164 D T *• û I M f LOW VOLTAGE AVALANCHE ZENER DIODES These low voltage avalanche zener diodes are specifically designed for low current, low noise applica­ tions. The very sharp knees, low leakages, and low impedances at low currents make them ideal for voltage


    OCR Scan     		PDF 4fl355 1N5518 250uA 1N6082-43 1N6083 1N6084-51 IN6085 1N6086 1N6087 N6088 Low Noise Zener Diode 1N5527 zener 431 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524

    Untitled

    Abstract: No abstract text available
    Text: Aflkm*A w an A M P com pany RF MOSFET Power Transistor, 5W, 28V 100 - 500 MHz UF2805B V2.00 Features • N-Channel Enh ancem en t Mode Device • DMOS Structure • Lower Capacitances for Broadband O peration • C om m on Source Configuration • Lower Noise Floor


    OCR Scan     		PDF UF2805B 680pf B20pf UF2805B

    MRF586

    Abstract: MRF506 Motorola AR 164 MRF587 MRF587 equivalent
    Text: MOTOROL A SC XSTRS/R F *4hE D b3b?254 DDTMTTM 1 •ROTfe » E 3 5 -O S MOTOROLA ■ SEMICONDUCTOR I MRF586 MRF587 TECHNICAL DATA D esign er's D ata Sheet The RF Line NPN SIU C O N HIGH FREQUENCY TRANSISTORS . . . designed for use in high-gain. low-noise ultra-linear, tuned and


    OCR Scan     		PDF MRF586 MRF587 5-10pF 15kHz MRF506 Motorola AR 164 MRF587 MRF587 equivalent

    MJE2901

    Abstract: mje2801 TO-225AB
    Text: MOTOROLA SC 1EE D I XS TRS/R F b 3 b 7 2 5 4 Q0ÛS347 fi | r - 3 3 - ; 3 NPN T - ? 3 -2 1 MOTOROLA MJE2801, MJE2801T SEMICONDUCTOR TECHNICAL DATA PNP MJE2901 10 AMPERE COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS


    OCR Scan     		PDF MJE2801, MJE2801T MJE2901 35-Watts O-225AB JWJE2801T O-220AB MJE2801/MJE2801T MJE2901 mje2801 TO-225AB

    2N6767

    Abstract: No abstract text available
    Text: POWERMOSFET- TRANSISTORS , JTX JTXV¡¡Jgg 400 Volt, 0.3 Ohm N-Channel FEATURES DESCRIPTION • • • • • • The U nitrode power MOSFET design u tilizes th e m ost advanced technology available. This e fficie n t design achieves a very low Rosiom and a high transconductance.


    OCR Scan     		PDF supplie-1064 2N6767 2N6768

    chip die hp transistor

    Abstract: No abstract text available
    Text: Whol H EW LETT wLKM PA CK A RD MGA-63100 Medium Power 2 Stage GaAs FET Cascade Chip Outline Features • • • • Unmatched 2 Stage FET Cascade High Output Power: 22 dBm typical Pi cmat 14 GHz High Gain: 10.5 dB typical Gi dB at 14 GHz Single Supply Bias


    OCR Scan     		PDF MGA-63100 chip die hp transistor

    av dam he ne

    Abstract: No abstract text available
    Text: H IG H V O L T A G E P O W E R O P E R A T IO N A L A IV IP L ÎP IE R PA44 M I C R O T E C H N O L O G Y h t t p ://WWW.APEXMICRDTECH.OOM 800 5 4 6 -APEX (800) 546-2739 FEATURE • SURFACE MOUNT PACKAGE • MCNGUTHI CMOS TECHNOLOGY • LCWOCOT • • •


    OCR Scan     		PDF ON--350V PA44UREV av dam he ne

    GE opto detector

    Abstract: No abstract text available
    Text: SFH6943 Infineon Low Current Input Mini Optocoupler technologies ' Dimensions in Inches mm J l Anode i2 * n r Anode 2 .016 (.41) Common 3 1 i Cathode V Ce = 5 V Anode 4 L I • Good CTR Linearity Versus Forward Current • Minor CTR Degradation • Field Effect Stable by TRIOS


    OCR Scan     		PDF SFH6943 1-888-lnfineon GE opto detector

    2SC4813

    Abstract: VDF pn C40r
    Text: / \ ° 9 ~ y=7 > v 7 , $ Silicon Power Transistor 2SC4813 N PN X fcf $ + V 7JI/M v y =i > h -7 > y * £ 2SC4813 i, ¡ i î ü X ' f - y f L T i m $ a 7 ,i^Not7 - h 7 > >>X ? T'fÈ VCE(sat T'hFE^ ' lSJ'v ^ T " D C / D C r? L T ^ iS T 't o É fc , «F 7 ^ T ^ T - h 0> ^ " j± iiT 'g ijj^ ^ B ^ ^ 0' y ^ - ^ r è


    OCR Scan     		PDF 2SC4813 2SC4813 D15603JJ2V0DS00 TC-7819) VDF pn C40r

    TC-7986A

    Abstract: 2SK2112 CMS01 7986A diode lt 0236
    Text: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,


    OCR Scan     		PDF 2SK2112 oeTi14 a-Ti4S24# TC-7986A CMS01 7986A diode lt 0236

    Untitled

    Abstract: No abstract text available
    Text: R F RF2423 H MICRO DEVICES 100m W SPREAD-SPECTRUM TR A NSM ITTER 1C Typ ical A p plications • Digital and Analog Communication Systems • GMSK, QPSK, DQPSK, QAM Modulation • Spread Spectrum Communication Systems • AM, SSB, DSB Modulation • Portable Battery Powered Equipment


    OCR Scan     		PDF RF2423 F2423

    Untitled

    Abstract: No abstract text available
    Text: WJ-PA5 / SMPA5 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH THIRD ORDER IP.: +35 dBm TYP. HIGH OUTPUT POWER: +25 dBm (TYP.) LOW VSWR: < 1.5:1 (TYP.) OPERATION FROM +12 Vdc TO +15 Vdc : ;i-4* ¡ ¡ ¡ ¡ ill


    OCR Scan     		PDF 50-QHM

    ATF-45100

    Abstract: ATF 45100 ATF45100 ATF45100-GP6
    Text: HEULETT-PACKARD/ Wam H E W L E T T mLfim P A C K A R D CMPNTS b lE D • M 4 4 7 S S 4 □ 0 0 cl cî S 4 ATF-45100 AT-8151 2-12 GHz Medium Power Gallium Arsenide FET Features 3T7 ■ Chip Outline • High Output Power: 29.0 dBm typical Pi <ra at 4 GHz


    OCR Scan     		PDF M447SÃ ATF-45100 AT-8151) ATF-45100 passivat-127 ATF 45100 ATF45100 ATF45100-GP6

    WJ-CRA36

    Abstract: No abstract text available
    Text: ujU RA36 / SMRA36 100 to 2000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE in s u r f a c e m o u n t HIGH GAIN-THREE STAGES: 24.0 dB TYR LOW VSWR: 1.4:1 (TYR) MEDIUM OUTPUT LEVEL: +13.0 dBm (TYR) WIDE BANDWIDTH: 50-2100 MHz (TYR) Outline Drawings


    OCR Scan     		PDF SMRA36 1-800-WJ1-4401 WJ-CRA36

    Standish LCD

    Abstract: STANDISH LCD DISPLAYS hamlin lcd hamlin 3909 3900-365-920 HD61100 3940-365-920 10.1 inch lcd with led backlight 40 pin connector pinout 3902-365-920 SIM204DSHWLE4
    Text: Representing Electronic Components http://www.csc-intl.com • a n a d ia n S o u r c e C o r p o r a t io n Winnipeg Tel: 204 897-4401 Fax: (204) 897-3181 Ottawa Tel: (613) 592-5641 Fax: (905) 415-1953 Toronto Head Office Tel: (905) 415-1951 Fax:(905)415-1953


    OCR Scan     		PDF 11III W7514 Standish LCD STANDISH LCD DISPLAYS hamlin lcd hamlin 3909 3900-365-920 HD61100 3940-365-920 10.1 inch lcd with led backlight 40 pin connector pinout 3902-365-920 SIM204DSHWLE4

    2N760A

    Abstract: MC 331 transistor 2N757A transistor WFA 2N759A 945 U3d marking MIL-S-19500/218
    Text: MIL-S-19500/218A 23 November 1966 SUPEKSMJING M IL-S-19500/218 SigC 11 October 1961 (See 6 .4) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N757A, 2N750A AND 2N760A This specification is mandatory for use by a ll Depart­


    OCR Scan     		PDF MIL-S-19500/218A MIL-S-19500/218 2N757A, 2N759A 2N760A 2N757A 2N760A MC 331 transistor transistor WFA 945 U3d marking MIL-S-19500/218

    2SJ411

    Abstract: TC-8022 ru 4c diode
    Text: MOS h 7 > y 'X i! M OS Field Effect Transistor 2SJ411 ? ± \s M OS FET X 2S J411 it P 5 1 -V M O S F E T T \ 5 ' V M y ^ :M % > ^ 7 m 1C O t ± i * t C J: 5 ¡ t & S K t ! ) m m e : mm) 7.0 MAX. y - n m z i 7 ^ ^ . d c/d c = 3 > / 'i- ^ * if ic g ia - ? - r 0


    OCR Scan     		PDF 2SJ411 IEI-620) 2SJ411 TC-8022 ru 4c diode

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57774 220 DESCRIPTION 2 2 5 M H z , 2 5 W , FM M O B ILE RADIO OUTLINE DRAWING The M57774 is a th ic k film RF power module o f 220 ~ 225MHz, 30W o u tp u t, specifically designed fo r 220 ~ 225MHz, 25W FM m obile radios. FEATURES


    OCR Scan     		PDF M57774 M57774 225MHz,

    plji

    Abstract: UES2602 UES2603 UE52603 UES2601 UES2601HR2 UES2601R UES2602HR2 UES2603HR2
    Text: RECTIFIERS [j|g g g High Efficiency, 30ACenter-Tap UES2603 UES2601HR2 UES2602HR2 UES2603HR2 FE A TU R ES • Very Low Forward V oltage D E S C R IP T IO N T his series com bines tw o high efficiency • • • • • • devices into one package, sim plifying


    OCR Scan     		PDF UES2603 UES2601HR2 UES2602HR2 UES2603HR2 UES2601, UES2601HR2. UES2602. UES2602HR2 UES2603, plji UES2602 UES2603 UE52603 UES2601 UES2601R UES2603HR2

    ic f2114

    Abstract: schematics for a PA amplifier RF2114 uhf linear amplifier
    Text: RFEÜ RF2114 M ICRO-DEVICES M E D IU M POW ER L IN E A R A M P L IF IE R T y p ic a l A p p lic a t io n s • Digital Communication Systems • Portable Battery Powered Equipment • Spread Spectrum Communication Systems • Commercial and Consumer Systems


    OCR Scan     		PDF RF2114 RF2114 RF2114_ 150MHz ic f2114 schematics for a PA amplifier uhf linear amplifier

    Untitled

    Abstract: No abstract text available
    Text: uuU RA46 / SMRA46 1000 to 4000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 0.8-4.2 GHz TYR HIGH GAIN: 25.5 dB (TYR) HIGH OUTPUT POWER: +19.0 dBm (TYR) LOW NOISE: 4.5 dB (TYR) Outline Drawings RA46 Specifications*


    OCR Scan     		PDF SMRA46