Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NDS941 Search Results

    SF Impression Pixel

    NDS941 Price and Stock

    onsemi NDS9410A

    MOSFET N-CH 30V 7.3A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDS9410A Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.27251
    		Buy Now

    Rochester Electronics LLC NDS9410A

    MOSFET N-CH 30V 7.3A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDS9410A Bulk 410
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.73
    • 10000 $0.73
    		Buy Now

    Fairchild Semiconductor Corporation NDS9410A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics NDS9410A 53,442
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    NDS9410A 3,251
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    NDS9410A 169 9
    • 1 -
    • 10 $0.6
    • 100 $0.3
    • 1000 $0.18
    • 10000 $0.18
    		Buy Now
    Quest Components NDS9410A 6,193
    • 1 $0.45
    • 10 $0.45
    • 100 $0.45
    • 1000 $0.1875
    • 10000 $0.165
    		Buy Now
    NDS9410A 1,720
    • 1 $2.4
    • 10 $2.4
    • 100 $2.4
    • 1000 $0.84
    • 10000 $0.84
    		Buy Now
    NDS9410A 936
    • 1 $0.75
    • 10 $0.75
    • 100 $0.75
    • 1000 $0.3
    • 10000 $0.3
    		Buy Now
    NDS9410A 135
    • 1 $0.8
    • 10 $0.4
    • 100 $0.24
    • 1000 $0.24
    • 10000 $0.24
    		Buy Now
    Rochester Electronics NDS9410A 2,500 1
    • 1 $0.7042
    • 10 $0.7042
    • 100 $0.6619
    • 1000 $0.5986
    • 10000 $0.5986
    		Buy Now
    ComSIT USA NDS9410A 2,455
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Component Electronics, Inc NDS9410A 83
    • 1 $2.31
    • 10 $2.31
    • 100 $1.73
    • 1000 $1.5
    • 10000 $1.5
    		Buy Now

    National Semiconductor Corporation NDS9410A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics NDS9410A 2,511
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components NDS9410A 38,405
    • 1 $0.45
    • 10 $0.45
    • 100 $0.45
    • 1000 $0.45
    • 10000 $0.1575
    		Buy Now

    National Semiconductor Corporation NDS9410

    TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,7A I(D),SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NDS9410 779
    • 1 $1.0465
    • 10 $1.0465
    • 100 $1.0465
    • 1000 $0.2721
    • 10000 $0.2721
    		Buy Now
    NDS9410 500
    • 1 $0.69
    • 10 $0.69
    • 100 $0.46
    • 1000 $0.322
    • 10000 $0.322
    		Buy Now
    Component Electronics, Inc NDS9410 1,950
    • 1 $2.31
    • 10 $2.31
    • 100 $1.73
    • 1000 $1.5
    • 10000 $1.5
    		Buy Now
    Find more NDS941 price and stock on Findchips.com

    NDS941 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS9410 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9410 National Semiconductor Power MOSFETS SOIC-8 Dual/Single DMOS Scan PDF
    NDS9410 National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS9410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Tra Original PDF
    NDS9410A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS9410A National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS9410A_NF073 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9410A_NL Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9410S Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Tra Original PDF
    NDS9410S Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9410S National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9410S Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9410S Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Scan PDF

    NDS941 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS9410S
    Text: February 1997 NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS9410S CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS9410S PDF

    NDS9410A

    Abstract: No abstract text available
    Text: NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		NDS9410A NDS9410A PDF

    NDS9410S

    Abstract: No abstract text available
    Text: N February 1997 NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		NDS9410S NDS9410S PDF

    NDS9410A

    Abstract: 8301A
    Text: February 1996 NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS9410A NDS9410A 8301A PDF

    CA500

    Abstract: Q506 HDS404E LCD13 HDS404-E LCD20 LCD12 DF13-40DP-1 r637 TXOUT09
    Text: 2 3 4 5 6 VCC3 VCC3 7 8 VCC3_HPA U510 SI4800DY SO8 +12V R637 0/NA 0805 VCC5 VCC3_HPA D R515 100K 0603 G R516 100K 0603 R638 0805 S 1 +12V R640 LCD PANEL TRANSLATION BD CONNECTOR 9 FPVCC Q502 NDS9410 SO8 D Q500 A G DTC144WK D S 2N7002 SOT23_FET C507 0.01U/NA


    Original     		SI4800DY 1000P 2N7002 01U/NA DTC144WK NDS9410 TR/3216FF-3A 100PX4 120Z/100M CA500 Q506 HDS404E LCD13 HDS404-E LCD20 LCD12 DF13-40DP-1 r637 TXOUT09 PDF

    TX38D85VC1CAA

    Abstract: TX38d85 TX38d HT14X11 RP75X4 L509 HT14X11-101
    Text: 1 2 3 4 5 6 7 8 +3V +12V +5V R42 470K 0603 Q3 NDS9410 SO8 D U502 A +5V 24 D/LUMA C526 0.1U/NA 0603B 24 D/CRMA 1B1 1B2 1B3 1B4 1B5 1A1 1A2 1A3 1A4 1A5 2B1 2B2 2B3 2B4 2B5 2A1 2A2 2A3 2A4 2A5 VCC GND 1OE# 2OE# G R45 100K 0603 D S Q5 2N7002 C32 0.22U/NA 0603B


    Original     		DTC144WK OT23AN 2N7002 22U/NA 0603B NDS9410 MH1174F6S 0603B TX38D85VC1CAA TX38d85 TX38d HT14X11 RP75X4 L509 HT14X11-101 PDF

    MOSFET 830 63 ng

    Abstract: nds9410a diode marking code RJ
    Text: NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		NDS9410A MOSFET 830 63 ng nds9410a diode marking code RJ PDF

    NDS9410S

    Abstract: No abstract text available
    Text: February 1997 NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS9410S NDS9410S PDF

    DSA0030261

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS9410A MOSFET 830 63 ng
    Text: NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		NDS9410A DSA0030261 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS9410A MOSFET 830 63 ng PDF

    NDS9410A

    Abstract: No abstract text available
    Text: N February 1996 NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS9410A NDS9410A PDF

    Untitled

    Abstract: No abstract text available
    Text: NDS9410 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)20 I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D)5.8 @Temp (øC)70’ IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.5’ Minimum Operating Temp (øC)-55


    Original     		NDS9410 PDF

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    18mv

    Abstract: No abstract text available
    Text: G FEATURINperature Range July 2000 Tem ommercial Extended C 70˚C to C 0˚ -2 ment dheld Equip an H e bl ta or for P ML4863 High Efficiency Flyback Controller GENERAL DESCRIPTION FEATURES The ML4863 is a flyback controller designed for use in multi-cell battery powered systems such as PDAs and


    Original     		ML4863 ML4863 DS4863-01 18mv PDF

    LT1148

    Abstract: No abstract text available
    Text: LTC1148 LTC1148-3.3/LTC1148-5 High Efficiency Synchronous Step-Down Switching Regulators FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 1148 series is a family of synchronous stepdown switching regulator controllers featuring automatic


    Original     		LTC1148 LTC1148-3 3/LTC1148-5 250kHz LTC1174 LTC1265 LTC1435A LTC1538-AUX 114835fd LT1148 PDF

    ld 73

    Abstract: No abstract text available
    Text: FAIRCHILD February 1996 SEM ICONDUCTO R NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description These N -C hannel en hance m en t Features m o de po w e r field effect • density, D M O S technology. This v e ry high d e n sity process is


    OCR Scan     		NDS9410A NDS941 ld 73 PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R February 1997 tm NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		NDS9410S NDS9410S PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R February 1996 tm NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect • 7.3A, 30V. RDS 0N = 0.028£2 @ VGS = 10V. RDS(0N) = 0.042£2 @ VGS = 4.5V.


    OCR Scan     		NDS9410A NDS9410A NDS941 PDF

    PCTI

    Abstract: NDS9410S
    Text: FAIRCHILD s e m ic d n d u c t d r February 1997 NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement Features mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		NDS9410S NDS9410S PCTI PDF

    Untitled

    Abstract: No abstract text available
    Text: 6 National April 1995 Semiconductor' NDS9410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDS9410 PDF

    PCTI

    Abstract: NDS9410A
    Text: FAIRCHILD s e m ic d n d u c t d r February 1996 NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement Features mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		NDS9410A NDS941 PCTI NDS9410A PDF

    NDS9410 equivalent

    Abstract: NDS9410
    Text: National ÆlÆ Semiconductor November 1993 NDS9410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology. This


    OCR Scan     		NDS9410 LSD1130 bSD113D NDS9410 equivalent NDS9410 PDF

    NDS9410A

    Abstract: No abstract text available
    Text: May 1996 National Semiconductor" NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDS9410A bS0113Q NDS9410A PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD February 1997 SEM ICONDUCTO R NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor G eneral Description SO-8 N-Channel enhancement Features mode power field effect • 7.0 A, 30 V. RosfQN, = 0.03 O @ VGS = 10 V. ■ High density cell design for extremely low RDS 0N|.


    OCR Scan     		NDS9410S NDS941 PDF