NE25139T1U71 Search Results

NE25139T1U71 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE25139T1U71		NEC	General purpose dual-gate GaAS MESFET. Idss range 5-15 mA.		Original	PDF

NE25139T1U71 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NE25139 Abstract: ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13 Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm	Original	PDF	NE25139 NE251 NE25139T1U74 24-Hour NE25139 ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13
NE25139T1U73 Abstract: NE25139 NE25139U74 NE25139-T1 NE25139T1U71 NE25139T1U72 NE25139U71 NE25139U72 NE25139U73 fet dual gate sot143 Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm	Original	PDF	NE25139 NE251 24-Hour NE25139T1U73 NE25139 NE25139U74 NE25139-T1 NE25139T1U71 NE25139T1U72 NE25139U71 NE25139U72 NE25139U73 fet dual gate sot143
Untitled Abstract: No abstract text available Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES_ • SU ITA B LE FOR USE AS RF AM PLIFIER IN UH FTUNER • LOW C rss: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz NE25139 POWER GAIN AND NOISE FIGURE vs.	OCR Scan	PDF	NE25139 NE251 OT-143) NE25139 E25139-T1 NE25139U71 NE25139T1U71 NE25139U72 E25139T1U72 NE25139U73
Untitled Abstract: No abstract text available Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POW ER GAIN AND NOISE FIGURE vs. DRAIN TO S O U R C E V O LT AG E • SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER • LOW C r s s : 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 M Hz m • LOW NF: 1.1 d B T Y P A T 900 MHz	OCR Scan	PDF	NE25139 NE251 OT-143) NE25139 NE25139-T1 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73
U73-U74 Abstract: 14E-14 Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP m HIGH GPS: 20 dB (TYP) AT 900 MHz CÛ •a 7D LOW NF: 1.1 dB TYP AT 900 MHz	OCR Scan	PDF	NE25139 NE251 OT-143) NE25139-T1 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73 U73-U74 14E-14