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    NE76100N Search Results

    NE76100N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE76100N NEC General purpose GaAs MESFET. IDSS 30 to 60 mA. Original PDF

    NE76100N Datasheets Context Search

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    NE76100

    Abstract: NE76100M NE76100N
    Text: GENERAL PURPOSE GaAs MESFET FEATURES • LG = 1.0 µm, WG = 400 µm DESCRIPTION NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure makes this device appropriate for use in the second or third stages of


    Original     		PDF NE76100 NE76100 NE76100N NE76100M 24-Hour NE76100M NE76100N

    NE76100

    Abstract: NE76100M NE76100N
    Text: GENERAL PURPOSE GaAs MESFET FEATURES DESCRIPTION Optimum Noise Figure, NFOPT dB • LG = 1.0 µm, WG = 400 µm 4 24 3.5 21 3 18 Ga 2.5 15 2 12 9 1.5 6 1 NF 0.5 3 NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure


    Original     		PDF NE76100 NE76100 NE76100N NE76100M 24-Hour NE76100M NE76100N

    equivalent 4435

    Abstract: No abstract text available
    Text: GENERAL PURPOSE GaAs MESFET NE76100 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, los = 10 m A FEATURES LOW NOISE FIGURE: NF = 0.8 dB typical at f = 4 G Hz CO TJ HIGH ASSOCIATED GAIN: G a = 12.0 dB typical at f = 4 GHz Lq = 1.0 j.m , Wg = 400 (im


    OCR Scan     		PDF NE76100 NE76100 E76100 lS22l NE76100N NE76100P equivalent 4435

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE GaAs MESFET FEATURES NE76100 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA LOW NOISE FIGURE: N F = 0.8 d B ty p ic a l at f = 4 G H z m "O HIGH ASSO CIATED GAIN: G a = 12.0 d B ty p ic a l at f = 4 G H z o z p T3 < Li_


    OCR Scan     		PDF NE76100 IS12S21I NE76100 140nm NE76100N NE76100M

    4435 ag

    Abstract: 5q 1265 rf
    Text: GENERAL PURPOSE GaAs MESFET FEATURES NOISE FIGURE & ASSOCIATED GAINvs.FREQUENCY - • NE76100 LOW NOISE FIGURE: Vds = 3 V, Id s = 10 mA NF = 0.8 dB typical at f = 4 GHz


    OCR Scan     		PDF NE76100 E76100 NE76100 NE76100N NE76100M 4435 ag 5q 1265 rf