nec k 813
Abstract: s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE33284A
NE33284A
NE33284A-SL
NE33284A-T1
NE33284A-T1A
nec k 813
s11 diode shottky
IEI1207
NE33284A-SL
NE33284A-T1
NE33284A-T1A
NE33284AS
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NEC D288
Abstract: d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116
Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE32984D
NE32984D
NEC D288
d1397
D331 transistor
transistor d288
nec d1594
D78 NEC
D1594
transistor nec D78
transistor d168
D1116
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TD-2411
Abstract: NEC 3552 2SC5011 2SC5011-T1 2SC5011-T2 702 mini transistor P1039 1357 transistor NEC
Text: DATA SHEET SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters PART NUMBER QUANTITY 2SC5011-T1 3 Kpcs/Reel.
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2SC5011
2SC5011-T1
2SC5011-T2
TD-2411
NEC 3552
2SC5011
2SC5011-T1
2SC5011-T2
702 mini transistor
P1039
1357 transistor NEC
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nec 2412
Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
Text: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1
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2SC5012
2SC5012-T1
2SC5012-T2
nec 2412
transistor NEC 882 p
2412 NEC
2SC5012-T1
2SC5012
2SC5012-T2
NEC 2403 106
NEC 2403 545
TD-2412
nec 2702
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g2ns
Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 NEC k 2134 812 421
Text: DATA DATASHEET SHEET GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: GS = 5.5 dB TYP. @f = 12 GHz • Gate Length: Lg = 0.8 mm recessed gate • Gate Width: Wg = 330 mm • 4 pins super mini mold
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NE72118
NE72118)
g2ns
C10535E
NE72118
NE72118-T1
NE72118-T2
NEC k 2134
812 421
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ZO 103 MA 75 623
Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Text: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
ZO 103 MA 75 623
ZO 103 MA 75 542
1 928 405 767
NEC C 3568
TD-2433
2SC5008-T1
4557 nec
518 1149 0 44 111
1 928 405 452
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nec 2401 831
Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
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2SC5010
2SC5010
nec 2401 831
nec 2401
2SC5010-T1
437 20000
marking 83
7749 transistor
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NE332
Abstract: NE33284AS nec k 813 s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PC358C
Abstract: K 347 PC358 LM358 nec 358 amplifier IC LM358 lm358 replacement
Text: NEC NEC Electronics Inc. D e scrip tio n //P C 3 5 8 D U A L LO W -P O W E R O P E R A T IO N A L A M P L IF IE R Pin Configuration The /¿PC358 is designed to operate from a single power supply, with the option to operate from split power sup plies. This amplifier offers the circuit designer low power
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uPC358
LM358
PC358C
K 347
PC358
nec 358 amplifier
IC LM358
lm358 replacement
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IC ATA 2398
Abstract: ata 2398 transistor D 2395 NE33284A te 2395 TRANSISTOR low noise FET NEC U TVR 681
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The N E33284A is a Herero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for GPS,
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NE33284A
NE33284A
IC ATA 2398
ata 2398
transistor D 2395
te 2395 TRANSISTOR
low noise FET NEC U
TVR 681
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nec 358 amplifier
Abstract: operational amplifier 458 PC1458 LPC-1458
Text: NEC NEC Electronics Inc. D escription yuPC1458 DUAL GENERAL PURPOSE OPERATIONAL AMPLIFIER Pin Configuration The /UPC1458 ¡a a dual general purpose operational amplifier w hich incorporates internal frequency com pen sation. This circuit w a s designed for a wide range of g e n
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uPC1458
yuPC1458
PC1458
nec 358 amplifier
operational amplifier 458
PC1458
LPC-1458
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Transistor NEC K 3654
Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS
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NE32984D
NE32984D
NE32984D-T1A
NE32984D-SL
NE32984D-T1
Transistor NEC K 3654
NEC Ga FET marking L
NEC 2505
NEC k 3654
NEC Ga FET marking A
KA transistor 26 to 40 GHZ
NEC 1093
nec gaas fet marking
low noise, hetero junction fet
NEC Ga FET marking V
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NEC Ga FET marking L
Abstract: U/25/20/TN26/15/850/NE32984D
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm
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NE32984D
NE32984D
NE32984D-SL
NE32984Dr
NEC Ga FET marking L
U/25/20/TN26/15/850/NE32984D
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NE42484A
Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE42484A
NE42484A
NE42484A-SL
NE42484A-T1
transistor NEC D 986
ne42484
IC ATA 2388
L to Ku BAND LOW NOISE AMPLIFIER
NEC Ga FET marking L
nec gaas fet marking
NEC Ga FET marking A
KU 506 transistor
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2SC3570
Abstract: 358 nec
Text: NPN SILICON POWER TRANSISTOR 2SC3570 D ESCRIPTIO N The 2SC3570 is NPN silicon epitaxial transistor designed for switching regulator, DC-DC converter and high frequency power PA C KA G E DIM ENSIONS in millimeters inches amplifier application. 10.5 MAX. (0.413 MAX.)
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2SC3570
2SC3570
358 nec
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sl2 357
Abstract: No abstract text available
Text: D A TA S H EE T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz • Gate Length: Lg = 0.8 /urn recessed gate • Gate W idth: Wg = 330 /urn • 4 pins super mini mold
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NE72118
NE72118-T1
NE72118-T2
WS60-00-1
IR30-00-2
sl2 357
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sem 2105 16 pin
Abstract: sem 2105
Text: DATA SH E E T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz Gate Length: Lg = 0.8 jum recessed gate Gate Width: Wg = 330 fjm 4 pins super mini mold Tape & reel packaging only available
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NE72118
NE72118-T1
NE72118-T2
NE72118)
sem 2105 16 pin
sem 2105
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation
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2SC5011
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / ELECTRON DEVICE SILICO N TRAN SISTO R / ^ ^ 2SC4179 FM /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in m illim eters • High G ain B a ndw idth P rodu ct: f j = 250 M Hz TYP.
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2SC4179
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2SC5012-T1
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •
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2SC5012
2SC5012-T1
2SC5012-T2
2SC5012-T1
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transistor NEC D 882 p
Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain
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2SC5011
2SC5011-T1
transistor NEC D 882 p
393AN
transistor 2sc 3203
nec d 1590
2sc 1329
transistor NEC b 882
nec a 634
e50p
NEC D 822 P
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Untitled
Abstract: No abstract text available
Text: SEC NEC Electronics Inc. D e scrip tio n ¿/PC1458 DUAL GENERAL PURPOSE OPERATIONAL AMPLIFIER Pin C o n figu ratio n The //PC1458 ¡a a dual general purpose operational amplifier which incorporates internal frequency com pen sation. This circuit w a s designed for a wide range of g e n
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/PC1458
//PC1458
PC1458
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IC SEM 2105
Abstract: 3771 nec
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
IC SEM 2105
3771 nec
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vav99
Abstract: yr yf
Text: NEC i i f / v Silicon P o w e r T ran sisto r t z 2SD992 NPNX V 3 9 > h =7 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier, L o w Speed Sw itching £{•?!£[*] Unit : mm o u is - m m , 2.3 ± 0 .2 6. 5 + 0.2 ° V c E (sat)A i / J ''? o
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PWS10
CycleS50
5qMt51EÃ
43iSHt8tS!
vav99
yr yf
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