uPD720100
Abstract: 0409h uPD720110GC-8EA kds 12.000 uPD72011 PPB2 AT-49 uPD720110 TS10 48-mHz
Text: PRELIMINARY DATASHEET MOS INTEGRATED CIRCUIT µPD720110 USB2.0 Hub Controller Ver 0.91a The µPD720110 is a USB 2.0 hub device that complies with the Universal Serial Bus (USB) Specification Revision 2.0 and works up to 480Mbps. USB2.0 compliant transceivers are integrated for
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PD720110
PD720110
480Mbps.
5/12/480Mbps)
SBB-Z-2831-1
uPD720100
0409h
uPD720110GC-8EA
kds 12.000
uPD72011
PPB2
AT-49
uPD720110
TS10
48-mHz
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C10535E
Abstract: VP15-00-3 UPC8104G A/M29F010B(45/70/90/MT352/CG/InMarSat modulator
Text: DATASHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8104GR UP CONVERTER + QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS DESCRIPTION The µPC8104GR is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile
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PC8104GR
PC8104GR
C10535E
VP15-00-3
UPC8104G
A/M29F010B(45/70/90/MT352/CG/InMarSat modulator
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d1273
Abstract: SS-220 10v PA1851 UPA1851GR-9JG
Text: DATASHEET MOS Field Effect Transistor H P A 1851 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The //PA1851 is a switching device which can be driven directly by a 4V power source. The n PA1851 features a low on-state resistance and excellent
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uPA1851
105mQMAX.
210mQMAX.
J45a9
d1273
SS-220 10v
PA1851
UPA1851GR-9JG
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Semikron skiip 10 nec 063
Abstract: Semikron skiip 10 nec 063 I T 1 semikron skiip 10 nec skiip 11 nec 06 1 semikron skiip 11 nec semikron skiip nec miniskiip board miniskiip shunt 10nec06 SEMIKRON BOARD
Text: Datasheets for 600V-MiniSKiiP SKiiP 10 NEC 06 - SKiiP 10 NEC 06 I Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1 Values Units Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C
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00V-MiniSKiiP
Semikron skiip 10 nec 063
Semikron skiip 10 nec 063 I T 1
semikron skiip 10 nec
skiip 11 nec 06 1
semikron skiip 11 nec
semikron skiip nec
miniskiip board
miniskiip shunt
10nec06
SEMIKRON BOARD
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g2ns
Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 NEC k 2134 812 421
Text: DATA DATASHEET SHEET GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: GS = 5.5 dB TYP. @f = 12 GHz • Gate Length: Lg = 0.8 mm recessed gate • Gate Width: Wg = 330 mm • 4 pins super mini mold
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NE72118
NE72118)
g2ns
C10535E
NE72118
NE72118-T1
NE72118-T2
NEC k 2134
812 421
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET MOS INTEGRATED CIRCUIT µPD720120 USB2.0 PHY Transceiver with SIE (Ver 0.8) The µPD720120 complies with the Universal Serial Bus Specification Revision 2.0 and work up to 480 Mbps. The µPD720120 integrates serial interface engine and USB2.0 transceiver into a single
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PD720120
PD720120
12/480Mbps)
SBB-Z-2829-2
May/25/2000
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Untitled
Abstract: No abstract text available
Text: DATASHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR DESCRIPTION T h e 2 S C 2 1 4 8 , 2 S C 2 1 4 9 a re e co n o m ica l m ic ro w a v e tra n s is to rs PACKAGE DIMENSIONS e n c a p s u la te d in to new h e rm e tic s trip lin e p a cka g e s, "m icro X".
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2SC2148,
2SC2149
2SC2149.
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awm 20798 RIBBON CABLE
Abstract: awm STYLE 2919 COMPUTER CABLE 30V awm 2464 vw-1 300v shield cable specification M27500-24RC2S06 c2516 nec micro centronics 36 hp mini 2133 sata connector TPE 7058 DB15 male to db15 female G9731
Text: ND3% BASE1 XXXX4203-1158-1-P 1158 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 13:36 TS:TS date TS time CABLE ASSEMBLIES Find Datasheets Online COMPUTER CABLE ASSEMBLIES 0.80 mm DIGITAL CAMERA CABLE, POWER OVER CAMERALINK COMPATIBLE 3 SFP & SFP+ CABLE ASSEMBLIES CONT.
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1MD26-X560-00C-X00
1SD26-3120-00C-X00
GRP-130
G1801/2
BK007
awm 20798 RIBBON CABLE
awm STYLE 2919 COMPUTER CABLE 30V
awm 2464 vw-1 300v shield cable specification
M27500-24RC2S06
c2516 nec
micro centronics 36
hp mini 2133 sata connector
TPE 7058
DB15 male to db15 female
G9731
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GE 2N6027
Abstract: 2N5258 2SF128 2N5257 2N60758 2N6151 TIC236B 2n60758 motorola 02010LT 2N60738
Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062
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2N4947
2N4948
2N4949
2N4986
2N4993
2N5060
2N5061
2N5062
2N5063
2N5064
GE 2N6027
2N5258
2SF128
2N5257
2N60758
2N6151
TIC236B
2n60758 motorola
02010LT
2N60738
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2N60758
Abstract: 2N60738 2n60758 motorola 2N60718 2SF120 2N60708 2SF126 2SF32A 2sf248 2N5257
Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062
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2N4947
2N4948
2N4949
2N4986
2N4993
2N5060
2N5061
2N5062
2N5063
2N5064
2N60758
2N60738
2n60758 motorola
2N60718
2SF120
2N60708
2SF126
2SF32A
2sf248
2N5257
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET 1310 nm FIBER OPTIC COMMUNICATIONS NX5302 Series InGaAsP MQW LASER DIODE FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT ITH = 10 mA • HIGH SPEED tr = 0.15 ns MAX tf = 0.3 ns MAX • WIDE OPERATING TEMPERATURE RANGE:
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NX5302
OC-12,
NX7312UA
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NX5302
Abstract: NX5302EH NX5302EJ NX5302EK NX5302SH NX5302SJ NX7312UA LD chip
Text: PRELIMINARY DATASHEET 1310 nm FIBER OPTIC COMMUNICATIONS NX5302 Series InGaAsP MQW LASER DIODE 5 mW FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • HIGH SPEED: tr = 0.15 ns MAX tf = 0.3 ns MAX • WIDE OPERATING TEMPERATURE RANGE:
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NX5302
OC-12
NX7312UA
NX5302EH
NX5302EJ
NX5302EK
NX5302SH
NX5302SJ
LD chip
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SC-95
Abstract: 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A
Text: PowerMOSFET Product Overview April 2007 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device: Listed by configuration single/dual and polarity (N or P) Sorted by voltage first, followed by resistance and current
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MP-10,
SC-62/SOT-89,
SC-84,
SC-95/SOT-6,
SC-96
OT-23)
O-252Z,
O-252ZK,
O-263ZJ,
O-263ZK,
SC-95
2SK3294-ZJ-E1
UPA2724
NP22N055SLE-E1
2sk4075
UPA2726
2sk3919
2SJ598
2SK3570
UPA2723T1A
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NX6307
Abstract: NX6307GH NX6307GK NX6307SH NX6307SK STM-16 NX63067H NX63067K
Text: PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6307 SERIES FOR 2.5 Gb/s APPLICATIONS DESCRIPTION NEC's NX6307 Series is a 1 310 nm Multiple Quantum Well NX6307S Series MQW structured Distributed Feed-Back (DFB) laser diode
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NX6307
NX6307S
STM-16,
NX6307G
this07S
NX6307GH
NX6307GK
NX6307SH
NX6307SK
STM-16
NX63067H
NX63067K
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2sk4145
Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
Text: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device: Listed by configuration single/dual and polarity (N or P) Sorted by voltage first, followed by resistance and current
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SC-62/SOT-89,
SC-84,
SC-95/SOT-6,
SC-96
OT-23)
OT-23F,
O-252Z,
O-252ZK,
O-252ZP,
O-263ZJ,
2sk4145
2sk4075
UPA2724
2SK4212
2sk4213
uPA2804T1L
2SK4145-S19
2sk4202
uPA2211
2sk3919
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2N60738
Abstract: 2N60758 2N60718 2N6626 2N6140 2N6144 Motorola 2n5060 2SF120 ANSALDO MOTOROLA LSC
Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062
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2N4947
2N4948
2N4949
2N4986
2N4993
2N5060
2N5061
2N5062
2N5063
2N5064
2N60738
2N60758
2N60718
2N6626
2N6140
2N6144
Motorola 2n5060
2SF120
ANSALDO
MOTOROLA LSC
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A1310
Abstract: NX6301 NX6301GH NX6301GI NX6301SH NX6301SI NX6301SJ NX6301SK
Text: PRELIMINARY DATASHEET 1310 nm FOR 156 Mb/s, 622 Mb/s NX6301 InGaAsP MQW-DFB LASER DIODE SERIES IN CAN PACKAGE 5 mW FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 13 mA • HIGH SPEED: tr, tf = 0.5 ns MAX • SMSR:
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NX6301
NX6301
STM-4/OC-12
A1310
NX6301GH
NX6301GI
NX6301SH
NX6301SI
NX6301SJ
NX6301SK
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NX6300GJ
Abstract: NX6300SJ STM-16
Text: PRELIMINARY DATASHEET 1310 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE 10 mW NX6300 Series FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 10 mW • LOW THRESHOLD CURRENT: ITH = 12 mA @ TC = 25°C • HIGH SPEED: tr = 0.125 ns MAX tf = 0.2 ns MAX
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NX6300
NX6300
STM-16,
OC-48
NX6300GJ
NX6300SJ
STM-16
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IC/CTC 1351 transistor pin detail
Abstract: No abstract text available
Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT uPC 2 7 1 0 TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellular
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PC2710TB
PC2710T
uPC2710TB
uPC2710T
WS60-00-1
C10535E)
P13443EJ2V0DS00
IC/CTC 1351 transistor pin detail
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NX6306
Abstract: NX6306GH NX6306GK NX6306SH NX6306SK
Text: PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS DESCRIPTION NEC's NX6306 Series is a 1 310 nm Multiple Quantum Well NX6306S Series MQW structured Distributed Feed-Back (DFB) laser diode
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NX6306
NX6306S
NX6306G
6306S
NX6306GH
NX6306GK
NX6306SH
NX6306SK
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NX6306
Abstract: NX6306GH NX6306GI NX6306GJ NX6306GK NX6306SH NX6306SI LD chip
Text: PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB NX6306 LASER DIODE IN CAN PACKAGE Series FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 10 mA @ TC = 25°C • HIGH SPEED:
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NX6306
NX6306
NX6306G
NX6306GH
NX6306GI
NX6306GJ
NX6306GK
NX6306GH
NX6306GI
NX6306GJ
NX6306GK
NX6306SH
NX6306SI
LD chip
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Untitled
Abstract: No abstract text available
Text: DATA SHEET O C M O S FET PS7211-2A 8-PIN SOP OCMOS FET 2-ch OCMOS FET DESCRIPTION T he P S 7 2 1 1 -2 A is a solid state relay con ta in in g a G a A s LED on the light em ittin g sid e (in pu t sid e) and M O S FETs on the o u tp u t side. It is su ita b le fo r analog sig na l con tro l be cau se of its lo w o ffse t and high linearity.
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PS7211-2A
P11563E
PS7211-2A-F3
PS7211-2A-F4
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT u P C 8 1 2 6 K 900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS DESCRIPTION The ^¡PC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile
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PC8126K
20-pin
28-pin
IR35-00-2
C10535E)
13488E
J1V0DS00
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2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
B132-H8248-G5-X-7600
2sc3052ef
2n2222a SOT23
TRANSISTOR SMD MARKING CODE s2a
1N4148 SMD LL-34
TRANSISTOR SMD CODE PACKAGE SOT23
2n2222 sot23
TRANSISTOR S1A 64 smd
1N4148 SOD323
semiconductor cross reference
toshiba smd marking code transistor
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