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    NEC D 809 K Search Results

    NEC D 809 K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB. Visit Amphenol Communications Solutions
    DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DC8W8P500H30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DEV2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Female Screw Lock UNC 4.40, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DEO2V2P543M30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 30A, Europe Standard, 500 Cycles, Front: Threaded Insert UNC 4.40, Back: Metal Brackets. Visit Amphenol Communications Solutions

    NEC D 809 K Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NEC D 809 F

    Abstract: NEC D 809 NEC D 809 L NEC D 809 k
    Text: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTO R 2SK1586 N-CHANNEL MOS FET FOR SWITCHING The 2S K 1586, N-channel vertical type MOS FET, is a switching PACKAG E D IM E N S IO N S U n it : mm device which can be driven directly by the output of ICs having a 5 V


    OCR Scan     		2SK1586 2SK1586, NEC D 809 F NEC D 809 NEC D 809 L NEC D 809 k PDF

    NEC 824A

    Abstract: NEC D 809 2SD811 TOSHIBA NEC D 809 k nec k 813 25c3325 2sc2233 2SB837 2sc1741 2SD683A
    Text: - Z tt S € Type No. Manuf. 2SD 792 o ' fâ T 2SD 793 h m 2SD 794 h m 2SD 795 _ 0 a 2SD 796 s±mm 2SD 798 M M 2SD 800 2SD 801 2SD 802 2SD 803 2SD 804 ^ 2SD 806 2SD 807 », 2SD 808 2SD 809 2SD 809 1 2SD 810 - 2SD 813 2SD 814 ^ 2SD 816 S S TOSHIBA m NEC 2SD330


    OCR Scan     		2SD792 2SD793 2SD794 2SD795 2SD795A 2SD796 2SD798 2SD799 2SD800 2SD801 NEC 824A NEC D 809 2SD811 TOSHIBA NEC D 809 k nec k 813 25c3325 2sc2233 2SB837 2sc1741 2SD683A PDF

    NEC k 2134 transistor

    Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm


    OCR Scan     		NE32584C NE32584C NE32584C-T1A NE32584C-SL NE32584C-T1 NEC k 2134 transistor k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584 PDF

    d768 transistor

    Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
    Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		NE32584C NE32584C d768 transistor 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442 PDF

    NE32584C-T1

    Abstract: nec 3435 transistor am 4428
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.


    OCR Scan     		NE32584C NE32584C-T1A NE32584C-T1 nec 3435 transistor am 4428 PDF

    uc2801

    Abstract: pc2801 PH302 MPD6122G-XXX PH302B upc2801 SE303A-C SE313 mpd6122 NEC D 809 F
    Text: DATA S H E E T SEC BIPOLAR ANALOG INTEGRATED CIRCU ITS E L E C T R O N DE VI C E u P C 2 8 A , u P C 2 8 1 IN FR A RED R EM O TE CO N TR O L P R E A M P L IF IE R S The /iPC2800A and fxPC2801 A are bipolar analog ICs specifically developed for use in infrared remote control


    OCR Scan     		uPC2800A uPC2801 006-OOO2 SE303A-C SE307-C SE1003-C SE313 2SC3616, 2SD1615, 2SC2001 uc2801 pc2801 PH302 MPD6122G-XXX PH302B mpd6122 NEC D 809 F PDF

    EPBAD45

    Abstract: ul508a EPBCD45 feeder UL508 EPBAD42 EPBCD42
    Text: IEC Enclosed Listed Power Distribution Blocks Features and Approvals: 1 UL Listed UL1953 2 Flexible Stranded Wire Approval 3 High Short Circuit Current Rating UL508A 4 Integral dovetail features for multi-line stackup 5 Meets Feeder spacing requirements of UL508A


    Original     		UL1953) UL508A 6485K SK-BH/8-09/2 EPBAD45 ul508a EPBCD45 feeder UL508 EPBAD42 EPBCD42 PDF

    NEC JAPAN MADE 282 185 01

    Abstract: ADJ 809 13-100000 NEC AN 1090-0000
    Text: Application Note Usage and Application of µPC8130TA and µPC8131TA Variable Gain Amplifier Silicon MMICs for AGC Unit of Mobile Communication Systems Document No. P13856EJ1V0AN00 1st edition Date Published February 1999 N CP(K) Printed in Japan 1999


    Original     		PC8130TA PC8131TA P13856EJ1V0AN00 pro88-6130 NEC JAPAN MADE 282 185 01 ADJ 809 13-100000 NEC AN 1090-0000 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation


    OCR Scan     		2SC5011 PDF

    transistor NEC D 882 p

    Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain


    OCR Scan     		2SC5011 2SC5011-T1 transistor NEC D 882 p 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P PDF

    NE850R5

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device


    OCR Scan     		NE850R5 NE850R599 CODE-99 PDF

    613 GB 123 CT

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S


    OCR Scan     		uPA812T 2SC4227) /xPA812T 613 GB 123 CT PDF

    63000-000

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device


    OCR Scan     		NE850R5 E850R599 CODE-99 63000-000 PDF

    DMD43301

    Abstract: NL10276BC30-17 SM02
    Text: DMD43301 Specifications and Applications Information 10/17/06 Four Lamp DC to AC Inverter Preliminary The ERG DMD43301 DMD Series DC to AC inverter DMD Series features onboard connectors and can be easily dimmed using the onboard PWM Dimming or an external PWM


    Original     		DMD43301 DMD43301 NL10276BC30-17. NL10276BC30-17 SM02 PDF

    nec 2412

    Abstract: N2PB2426 crouse-hinds D2PB D2PB02 2412 NEC
    Text: N2PB Circuit Breaker Panelboards Factory Sealed Single & Two-Pole Breakers 1A Watertight† Cl. I, Div. 2, Groups C, D Weatherproof Cl. II, Div. 2, Groups F, G Corrosion-Resistant Dust-tight NEMA 3, 7CD Div. 2 , 9FG (Div. 2), 12 Applications: • N2PB panelboards are for use in central


    Original     		N2PB1426 N2PB2426 nec 2412 N2PB2426 crouse-hinds D2PB D2PB02 2412 NEC PDF

    D4242-1

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT M E C J L /P D 4 2 S 4 2 1 0 ,4 2 4 2 1 0 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The ¿/PD42S4210,424210 are 262 144 words by 16 bits dynamic CMOS RAMs with optional


    OCR Scan     		16-BIT, uPD42S4210 uPD424210 PD42S4210 44-pin 40-pin JJPD42S4210-70 D4242-1 PDF

    2sc5194-t1

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz


    OCR Scan     		2SC5194 2SC5194-T2 2sc5194-t1 PDF

    21134 015

    Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
    Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz


    OCR Scan     		NE38018 NE38018-T1 NE38018-T2 21134 015 nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIM INARY DATA S H E E T MOS INTEGRATED CIRCUIT >IEC /J P D 4 2 S 4 2 1 0 ,4 2 4 2 1 0 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PA GE MODE, B Y T E READ/W RITE MODE Description The /^ D 4 2S 42 1 0,424210 are 262 144 words by 16 bits dynamic CM O S RAMs with optional


    OCR Scan     		16-BIT, /PD42S4210 44-pin 40-pin PD42S4210-70 26-29i8: O35-0 0016i8 P40LE-400A-2 PDF

    NL10276BC30-18

    Abstract: DMD43584F SM02
    Text: DMD43584F Specifications and Applications Information 07/02/07 Four Lamp DC to AC Inverter Preliminary The ERG DMD43584F DMD Series DC to AC inverter DMD Series features onboard connectors and can be easily dimmed using the onboard PWM Dimming or an external PWM


    Original     		DMD43584F DMD43584F NL10276BC30-18. NL10276BC30-18 SM02 PDF

    NL10276BC30-17

    Abstract: No abstract text available
    Text: DMD43471 Specifications and Applications Information Four Lamp DC to AC Inverter 01/19/11 Package Configuration 1.03 [26,2] MAX .809 [20,54] PCB components are shown for reference only. Actual product may differ from that shown. The ERG DMD43471 DMD Series DC to AC inverter


    Original     		DMD43471 DMD43471 NL10276BC30-17, NL10276BC30-18, NL12876BC26-25 NL10276BC30-17 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. G a = 14.5 dB typ. O IP 3 = 22 dBm V67 , O IP 3 = 23 dBm (V68) typ. at f = 2 GHz


    OCR Scan     		NE38018 NE38018-T1 NE38018-T2 Rn/50 PDF

    NL10276BC30-18

    Abstract: NL10276BC30-17 IS NL12876BC26-25 DMD43471 NL10276BC30-17 SM02
    Text: DMD43471 Specifications and Applications Information 06/04/09 Four Lamp DC to AC Inverter Preliminary Package Configuration 1.03 [26,2] MAX .809 [20,54] PCB components are shown for reference only. Actual product may differ from that shown. The ERG DMD43471 DMD


    Original     		DMD43471 DMD43471 NL10276BC30-17, NL10276BC30-18, NL12876BC26-25. NL10276BC30-18 NL10276BC30-17 IS NL12876BC26-25 NL10276BC30-17 SM02 PDF

    IC SEM 2105

    Abstract: 3771 nec
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low


    OCR Scan     		2SC5008 2SC5008 IC SEM 2105 3771 nec PDF