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    NEC GA FET MARKING K Search Results

    NEC GA FET MARKING K Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    NEC GA FET MARKING K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    gs 069 0605

    Abstract: NE76084 marking code t1a nec 2571 NE76084-T1 C10535E NE76084-SL NE76084-T1A 6-18GHz NEC Ga FET marking V
    Text: DATA SHEET GaAs MES FET NE76084 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES PACKAGE DIMENSIONS Unit: mm • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz 1.78 ± 0.2 • Gate length: L g = 0.3 µ m


    Original     		NE76084 NE76084-T1 NE76084-T1A gs 069 0605 NE76084 marking code t1a nec 2571 NE76084-T1 C10535E NE76084-SL NE76084-T1A 6-18GHz NEC Ga FET marking V PDF

    D2504 transistor

    Abstract: d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817 NE329S01
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent low


    Original     		NE329S01 NE329S01 NE329S01-T1 D2504 transistor d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817 PDF

    transistor ne425s01

    Abstract: NEC Ga FET marking L C10535E NE425S01 NE425S01-T1 NE425S01-T1B NEC Ga FET marking C
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		NE425S01 NE425S01 NE425S01-T1B NE425S01-T1 transistor ne425s01 NEC Ga FET marking L C10535E NE425S01-T1 NE425S01-T1B NEC Ga FET marking C PDF

    low noise, hetero junction fet

    Abstract: NE325S01 NEC Ga FET marking L C10535E NE325S01-T1 NE325S01-T1B TRANSISTOR 318 NEC Ga FET marking A ne325
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE325S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		NE325S01 NE325S01 NE325S01-T1B NE325S01-T1 low noise, hetero junction fet NEC Ga FET marking L C10535E NE325S01-T1 NE325S01-T1B TRANSISTOR 318 NEC Ga FET marking A ne325 PDF

    NEC D288

    Abstract: d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116
    Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		NE32984D NE32984D NEC D288 d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116 PDF

    NE42484C

    Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		NE42484C NE42484C NE42484C-SL 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking PDF

    The Japanese Transistor Manual 1981

    Abstract: japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		NE32484A NE32484A NE32484A-SL The Japanese Transistor Manual 1981 japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking PDF

    nec 4164

    Abstract: NE4210S01
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.


    Original     		NE4210S01 NE4210S01 NE4210S01-T1 NE4210S01-T1B nec 4164 PDF

    C10535E

    Abstract: NE4210M01 NE4210M01-T1 NEC Ga FET marking A 119 069
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.


    Original     		NE4210M01 NE4210M01 NE4210M01-T1 C10535E NE4210M01-T1 NEC Ga FET marking A 119 069 PDF

    40847

    Abstract: NE4210S01 NE4210S01-T1 NE4210S01-T1B ku 1490
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.


    Original     		NE4210S01 NE4210S01 NE4210S01-T1 NE4210S01-T1B 40847 NE4210S01-T1 NE4210S01-T1B ku 1490 PDF

    transistor marking v72

    Abstract: transistor k 2628 NEC Ga FET marking C C10535E NE429M01 NE429M01-T1 VP15-00-3 hjfet NEC Ga FET marking A
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.


    Original     		NE429M01 NE429M01 NE429M01-T1 transistor marking v72 transistor k 2628 NEC Ga FET marking C C10535E NE429M01-T1 VP15-00-3 hjfet NEC Ga FET marking A PDF

    d1557

    Abstract: d472 TRANSISTOR TRANSISTOR d1557 transistor d472 D1162 D1790 D1557 transistor D1866 Nec d862 transistor D442
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.


    Original     		NE428M01 NE428M01 200Pm NE428M01-T1 d1557 d472 TRANSISTOR TRANSISTOR d1557 transistor d472 D1162 D1790 D1557 transistor D1866 Nec d862 transistor D442 PDF

    d768 transistor

    Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
    Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		NE32584C NE32584C d768 transistor 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442 PDF

    NEC Ga FET marking L

    Abstract: NE76184B marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
    Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity.


    Original     		NE76184B NE76184B NE76184B-T1 NE76184B-T1A NEC Ga FET marking L marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET PDF

    NEC Ga FET marking L

    Abstract: U/25/20/TN26/15/850/NE32984D
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm


    OCR Scan     		NE32984D NE32984D NE32984D-SL NE32984Dr NEC Ga FET marking L U/25/20/TN26/15/850/NE32984D PDF

    Transistor NEC K 3654

    Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS


    OCR Scan     		NE32984D NE32984D NE32984D-T1A NE32984D-SL NE32984D-T1 Transistor NEC K 3654 NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V PDF

    Untitled

    Abstract: No abstract text available
    Text: DA TA SH EET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.


    OCR Scan     		NE429M01 NE429M01 NE429M01-T1 Fin/50 PDF

    3692 nec

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET IV IF f / h e t e r o j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its


    OCR Scan     		NE4210M01 NE4210M01 200/im NE4210M01-T1 3692 nec PDF

    NEC Ga FET marking L

    Abstract: No abstract text available
    Text: DATA SH E E T HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.


    OCR Scan     		NE429M01 NE429M01 200pm NEC Ga FET marking L PDF

    NEC Ga FET

    Abstract: Nec K 872 NE325S01 AM/SSC 9500 ic data
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS


    OCR Scan     		NE325S01 NE325S01 NE325S01-T1 NE325S01-T1B IR30-00 NEC Ga FET Nec K 872 AM/SSC 9500 ic data PDF

    Nec b 616

    Abstract: 2SK1581
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98 .2 DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2 S K 1 581 N-CHAIMNEL MOS FET FOR SWITCHING


    OCR Scan     		2SK1581, Nec b 616 2SK1581 PDF

    SMt Transistor g16

    Abstract: 2SK1590
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2S K 1590 N -C H A N N EL M O S FET FOR S W IT C H IN G The 2SK1590, N-channel vertical typ e MOS FET, is a switching PACKAGE DIMENSIONS Unit : mm device w hich can be driven d ire ctly by the o u tp u t o f ICs having a 5 V


    OCR Scan     		2SK1590 2SK1590, SMt Transistor g16 2SK1590 PDF

    NEC Ga FET marking L

    Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
    Text: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm


    OCR Scan     		NE329S01 NE329S01 NE329S01-T1 NE329S01-T1B NEC Ga FET marking L lg TYP 513 309 low noise FET NEC U SAAI Marking PDF

    transistor NEC D 822 P

    Abstract: nec gaas fet marking NEC Ga FET transistor ne425s01
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high m obility electrons. Its excellent


    OCR Scan     		NE425S01 NE425S01 NE425S01-T1 transistor NEC D 822 P nec gaas fet marking NEC Ga FET transistor ne425s01 PDF