transistor f422
Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for
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50-MICRON
PD658xx
transistor f422
transistor f423
f422 transistor
transistor f421
BV09
F423
fet 13187
RJ4B
L442
bvoe
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nec d 882 p transistor
Abstract: TF-680 transistor NEC D 882 p DF QB L302
Text: QB-8 3.3-Volt, 0.44-Micron Gate Arrays NEC Electronics Inc. Preliminary Description April 1996 Figure 1. 672-pin BGA NEC’s 3.3-volt QB-8 family consists of ultra-highperformance, submicron gate arrays targeted for applications requiring high speeds and low power
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44-Micron
672-pin
A11111EU1V0DS00
nec d 882 p transistor
TF-680
transistor NEC D 882 p
DF QB
L302
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uPD65801
Abstract: UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813
Text: NEC Electronics Inc. CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, submicron gate arrays, targeted for applications requiring extensive integration and high speeds. The device
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PD65800
uPD65801
UPD65812
uPD65800
PD65810
PD65811
CMOS Transmission gate Specifications
uPD65806
UPD65804
uPD65802
uPD65813
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bv0T
Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high
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50-MICRON
PD658xx
bv0T
F423
FV06
RJ4B
83YL-9164B
"Single-Port RAM"
B00J
transistor f423
bewf
diode ru4d
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nec naming rule
Abstract: L302
Text: NEC Electronics Inc. UNIVERSAL PCI SERIES MIXED-VOLTAGE 0.6-MICRON CMOS GATE ARRAYS March 1995 Preliminary Description Figure 1. Application Example NEC's Universal PCI Series gate array family provides designers with the flexibility and performance required to
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F611
Abstract: L302 L611
Text: NEC Electronics Inc. CMOS-8LH 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high
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35-micron)
A11169EU1V0DS00
F611
L302
L611
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A1742
Abstract: nec gate drive panel lcd nec gate drive panel THOMSON lcd 40 pin diagram lvds LCD panel timing control PD66208 nec b 708 nec LQFP-208
Text: New generation Gate Array with large scale embedded SRAM CMOS-12M CMOS-12M is NEC Electronics’ new generation Gate Array with embedded high-density SRAMs and analog PLLs. This product offers low price, quick design turnaroundtime and quick manufacturing turnaroundtime.
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CMOS-12M
CMOS-12M
PD66201
A1742
nec gate drive panel lcd
nec gate drive panel
THOMSON lcd 40 pin diagram lvds
LCD panel timing control
PD66208
nec b 708
nec LQFP-208
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upd71055
Abstract: No abstract text available
Text: – Advance Information – Gate Array Solutions µPD71055-compliant Programmable Parallel Interface Following the phase-out of the popular µPD71055 programmable parallel interface unit standard product, NEC Electronics can offer a functional substitute based upon low-cost Gate Array ASIC technologies.
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PD71055-compliant
PD71055
EPMC-PU-0044-1
upd71055
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F611
Abstract: No abstract text available
Text: NEC Electronics Inc. CMOS-8LHD 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary Description April 1996 Figure 1. CMOS-8LHD Package Options: BGA & QFP NEC's CMOS-8LHD gate-array family combines cellbased-level densities with the fast time-to-market and low
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35-micron)
A10616EU1V0DS00
F611
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CMOS-9HD
Abstract: NEC stacked CSP 2000 L302 FPBGA NEC 2000 stacked
Text: NEC Electronics Inc. CMOS-9HD 3.3-Volt, 0.35-Micron drawn CMOS Gate Array Preliminary Description January 1998 Figure 1. Tape BGA and Chip Size Package NEC's CMOS-9HD, density-enhanced, 0.35 µm gate array family delivers a complete, low-cost answer to modern-day
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35-Micron
A12811EU3V0DS00
CMOS-9HD
NEC stacked CSP 2000
L302
FPBGA NEC 2000 stacked
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d 65632
Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Text: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products
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uPD65801
Abstract: uPD65800 UPD65804
Text: CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, sub micron gate arrays, targeted for applications requiring e xtensive in te g ra tio n and high speeds. The device
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H27SSS
uPD65801
uPD65800
UPD65804
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nec d 588
Abstract: nec naming rule nec product naming rule NEC CMOS-4
Text: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required
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35-MICRON
66MHz
nec d 588
nec naming rule
nec product naming rule
NEC CMOS-4
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Untitled
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. CMOS-8LH 3.3-V olt, 0.5-M icron CMOS G ate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high perform ance, sub-m icron gate arrays, targeted for
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35-micron)
b4275E5
0Qb6651
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NEC C51A
Abstract: nec inverter schematic F074 marking B007 marking B003 JH-04 UPB6101C
Text: N É C ELECTRONICS INC 7H c D e | LiMH752S DD0Û110 1 NEC NEC Electronics Inc. T-.42-11-05 //PB 6100 TTL-2 SERIES BIPOLAR TTL GATE ARRAYS March 1985 Revision 1 Description The //PB6100 series features three high-speed, lowpower, TTL-compatible gate arrays using advanced
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iMH752S
uPB6100
uPB6101
uPB6102
uPB6103
b457S55
/PB610
//PB6100
AIPB6101
AiPB6102
NEC C51A
nec inverter schematic
F074
marking B007
marking B003
JH-04
UPB6101C
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D65806
Abstract: 9215K1
Text: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications
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65-MICRON
xPD65800
D65806
9215K1
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Untitled
Abstract: No abstract text available
Text: NEC 3.3-V olt, 0.44-M icron G ate Arrays NEC Electronics Inc. Prelim inary April 1996 Figure 1. 672-pin BGA Description NEC’s 3.3-volt QB-8 fam ily consists of ultra-highperform ance, subm icron gate arrays targeted for applications requiring high speeds and low power
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672-pin
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upd6500
Abstract: F922 uPD65007 F981 IC tr f422 F661 CMOS GATE- NEC f422 f962 f791
Text: SEC CMOS-4L 1.5-M ICRON LOW-VOLTAGE CMOS GATE ARRAYS NEC Electronics Inc. February 1990 Description Figure 1. Sample CMOS-4L Packages NEC’s CMOS-4L family of 1.5-micron gate arrays are high-density, low-voltage application-specific integrated circuits ASICs that offer unique solutions for batterydriven circuits. Supply voltages ranging from 1.0 V to 5.5
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D65806
Abstract: No abstract text available
Text: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s
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65-micron
D65806
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Untitled
Abstract: No abstract text available
Text: NECES001 C P20K 0 .8 -M IC R O N NEC Electronics Inc. fpgas February 1993 Description Figure 1. CP20K FPGAs NEC Electronics Inc. and Crosspoint Solutions, Inc. have joined forces to offer to system designers an expedient way to prototype in Field Programmable Gate Arrays
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NECES001
CP20K
RAM8x16*
RAM16x16*
RAM32x16*
RAM8x32*
16x32*
RAM32x4*
RAM64x4*
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Untitled
Abstract: No abstract text available
Text: five 10 1992 NEC JJPD434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Description T he ^PD434000 is a 524,288-w ord by 8-bit static RAM fab ricated with advanced silicon-gate technology.
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JJPD434000
PD434000
288-w
32-pin
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f422
Abstract: transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003
Text: NEC NEC Electronics Inc. /¿ P D 6 5 0 0 0 C M O S -2 SER IES 3-M IC R O N CM OS G A T E A R R A Y S April 1985 D e sc rip tio n The/iPD65000 (CMOS-2) series of gate arrays are lowpower, high-speed devices featuring 3-mlcron silicon gate CMOS technology. The basic cell on the chip
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uPD65000
//PD65003
juPD65002
fiPD65010
juPD65020
16-Pin
18-Pin
20-Pin
24-Pin
28-Pin
f422
transistor f422
F981 IC
F421
4-bit even parity using mux 8-1
transistor f421
transistor f423
4-bit odd parity using mux 8-1
F423
PD65003
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65630
Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
Text: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform
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IEU-7922,
IP-8090
65630
RK4B
83nr-7843b
ru4f
RJ49
RJ4B
NEC uPD 65658
transistor f423
F423
L442
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ru4f
Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
Text: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform
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IEU-7922,
IP-8090
ru4f
F422
F423
rj8b
"Single-Port RAM"
TT 2246
RU89
BE09
L737
f425
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