PA101B
Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
Text: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
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PA101
PA102
PA103
PA104
P10944EJ2V0AN00
PA101B
PA103
PA104
MICRO-X TRANSISTOR MARK Q6
4 npn transistor ic 14pin
upa101g
PA102B
UPA101
P10944EJ2V0AN00
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rgb analog sync on green to rgb analog separate sync
Abstract: truth table of 4017 cb-c7
Text: |k NEC Electronics Inc. AAD38D5A 5 V, 135-M H z Em bedded M egam acro T rip le 8-B it V ideo D/A C onverter Advance Information Apr» 1995 Description The AAD38D5A embedded megamacro is a triple 8/6-bit digital/analog converter for use in CB-C7 cell-based
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AAD38D5A
135-M
AAD38D5A,
RS-343A
75-ohm
RS-170
GG01T42
rgb analog sync on green to rgb analog separate sync
truth table of 4017
cb-c7
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2SK1995
Abstract: tea 2453 MEI-1202 TEA-1035 transistor 2sk1995
Text: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1995 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1995 is N-channel M O S Field Effect Transistor designed fo r high voltage switching applications. FEATURES • Low On-state Resistance
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2SK1995
IEI-1209)
tea 2453
MEI-1202
TEA-1035
transistor 2sk1995
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Untitled
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1995 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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2SK1995
2SK1995
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tea 2453
Abstract: transistor 2sk1995 2SK1995 MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1995 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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2SK1995
2SK1995
IEI-1209)
tea 2453
transistor 2sk1995
MEI-1202
TEA-1035
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K2481
Abstract: 2481 diode sy 710 diode
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2481 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION The 2SK2481 is N -C hannel MOS Field E ffect T ra n s is to r de P A C K A G E D IM E N S IO N S in m illim e te rs sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .
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2SK2481
2SK2481
K2481
2481 diode
sy 710 diode
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d1072
Abstract: 2SK2541 MEI-1202 MF-1134
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWINGS in millimeter The 2SK2541 is a switching device which can be driven directly by a 1.5 V power source. The M O S FET has excellent switching characteristics and is suitable
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2SK2541
2SK2541
d1072
MEI-1202
MF-1134
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2SK2541
Abstract: MEI-1202 MF-1134 NEC reliability 1995
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SK2541
2SK2541
25ndustrial
MEI-1202
MF-1134
NEC reliability 1995
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k2341
Abstract: fet N-Channel transistor 250V DS NEC k 1995 transistor TC-8070
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The2SK2341 is N-channel Power MOS Field Effect Transis in millimeters to r designed for high voltage sw itching applications.
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2SK2341
The2SK2341
k2341
fet N-Channel transistor 250V DS
NEC k 1995 transistor
TC-8070
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Untitled
Abstract: No abstract text available
Text: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,
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2SK1123
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nec b 536 transistor
Abstract: NEC B 536
Text: DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in m illim e te rs 2.1
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2SC4958
nec b 536 transistor
NEC B 536
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TC-2514
Abstract: K2141 tC2514 I-1207
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2141 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The2SK 2141 is N -c h a n n e l Pow er M O S R e id Effect T ra n s is to r d e sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .
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2SK2141
2SK2141
MP-45F)
TC-2514
K2141
tC2514
I-1207
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TC-7606
Abstract: 2SK1283
Text: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to
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2SK1283
2SK1283
TC-7606
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K2140
Abstract: 2sk2140 TC-2513
Text: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR 2SK2140, 2SK2140-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2140,2SK2140-Z is N-channel Power MOS Field Effect PACKAGE DIMENSIONS in millimeters Transistor designed for high voltage switching applications.
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2140-Z
2SK2140
2SK2140-Z
2SK2140,
2SK2140-Z
K2140
TC-2513
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2SK2513-Z
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2513, 2SK2513-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T h e 2S K 2513. 2 S K 2513 -Z is N -C h a n n e l M O S F ie ld E ffe c t T ra n PACKAGE DIMENSIONS in m illim e te r s s is to r d e s ig n e d fo r h ig h c u r re n t s w itc h in g a p p lic a tio n s ,
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2SK2513,
2SK2513-Z
2SK2513-Z
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4 npn transistor ic 14pin
Abstract: PA1032 8 npn transistor ic 14pin
Text: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIM ENSIONS Units in mm FEATURES • FIVE M O NO LITHIC 9 GHz fr T R A NSISTO R S: ¿fPA103 B Two of these use a common em itter pin and can be used as differential am plifiers
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iPA103B:
iPA103G:
14-pin
fPA103
PA103
14-pin
4 npn transistor ic 14pin
PA1032
8 npn transistor ic 14pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2512 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T h e 2 S K 2 5 1 2 is N -C h a n n e l M O S F ield E ffe ct T ra n s is to r d e sig n e d fo r high c u rre n t sw itch in g a p p lica tio n s.
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2SK2512
2SK2512
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2SK929
Abstract: PS7K 2 fy
Text: M O S Field Effect Pow er Transistor 2SK929 MOS F E T Itffl 2SK929 l ì , T N MOS F E T 6 < , t •Vf- > r m , X ' i y f y tS > , K W m T O : mm) ¡ S l t l 'i S - X 'i 10.5 M A X . DC-D C 3 > /< - ? 4.7 M A X . 3 .0 M A X . # i t ° V d ss = 500 V, I dcdc) =
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2SK929
2SK929
FAXlZT43
ECl53ffie
PS7K
2 fy
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2499, 2SK2499-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2499 is N-Channel MOS Field Effect T ransistor de PACKAGE DIMENSIONS in m illim eters signed fo r high cu rren t sw itchin g applications.
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2SK2499,
2SK2499-Z
2SK2499
O-220Aß
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2365/2SK2366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect T ransistor designed fo r high vo ltag e sw itching applications. PACKAGE DIMENSIONS
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2SK2365/2SK2366
2SK2365,
2SK2365-Z/2SK2366,
2SK2366-Z
2SK2365:
2SK2366:
T0-220
2SK2365/2SK2366)
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k2511
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2511 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2511 is N-Channel MOS Field Effect T ra n s is to r designed PA C K A G E D IM E N S IO N S in m illim e te r fo r hig h c u rre n t s w itc h in g applications,
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2SK2511
2SK2511
k2511
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MES FIELD EFFECT TRANSISTOR 3SK299 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES P A C K A G E D IM E N S IO N S Suitable for use as R F am plifier in U H F T V tuner. in millimeters
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3SK299
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FST 460 transistor
Abstract: DIODE 3LU TC-7600 Bt460 PS7K Transistor FST 460 IEF620 2SK1288
Text: ^ — S> • S ' — h NEC MOS — h= 7 > i> ^ M O S Field Effect Pow er Transistor 2SK1288 y<r7— M O S FET m m x i f f l 2 S K 1 2 8 8 i , mm M O S FET T", 5 v ic <r>frtsizu X -i -yf >?"T"' s'-i X t ’to fS^t >ffiÎÆT”, X ^ 7 f > ?, v u # i t /-f.iir &
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2SK1288
FST 460 transistor
DIODE 3LU
TC-7600
Bt460
PS7K
Transistor FST 460
IEF620
2SK1288
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TC-6300
Abstract: 2SK873 miw dc-dc tc6300 Voscm-20
Text: M O S Field Effect Pow er Transistor 2SK873 N f t ^ ^ - M O S FET xmm 2SK873 Ü , •c * > K < , x ^ 7 f > n i i i ; - M OS F E T t i T is d , ¡a s Jf x W & E I T O ! mm -i ■y-f > r-.iiri?;, D C -D C n > ✓ * -? t’ i i i S T 't o & f t °V dss
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2SK873
TC-6300
2SK873
miw dc-dc
tc6300
Voscm-20
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