marking code B2 NEC
Abstract: NEC tantalum capacitor 104 TANTALUM capacitor nec date code marking NEC 105M C105 SVHA1A225M SVHB21A475M SVHC1A156M DIP capacitor tantalum electronic corporation
Text: DATA SHEET TANTALUM CAPACITOR SV/H SERIES SURFACE MOUNT RESIN MOLDED TANTALUM CHIP CAPACITORS HIGH RELIABILITY NEC’s SV/H series solid tantalum capacitor has developed for automotive application. Comparing to the former type R Series , the higher reliability and the higher performance have been built in the
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DE0202
marking code B2 NEC
NEC tantalum capacitor
104 TANTALUM capacitor nec
date code marking NEC
105M
C105
SVHA1A225M
SVHB21A475M
SVHC1A156M
DIP capacitor tantalum electronic corporation
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General Micro-electronics
Abstract: SMT pitch roadmap ansys darveaux ansys CP-01019-1 Electronic Arrays FR4 thermal expansion constant vs temperature neural network BGA cte amkor flip
Text: Building Reliability Into Full-Array BGAs Yuan Li, Ph.D., Anil Pannikkat, Ph.D., Larry Anderson, Tarun Verma, Bruce Euzent Altera Corporation 101 Innovation Drive, San Jose, CA 95134 Electronic Arrays, NEC, IMP and Altera Corp. He joined Altera in 1992 and is currently Director
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TR-NWT-001217
Abstract: IEC60107-4-104 001217 MIL-STD-202F101D
Text: NEW PRODUCTS 5 2.0 mm PITCH METRIC CONNECTOR Seiichi Murakami Introduction NEC has developed a series of metric connectors FB series with excellent features to aid high-density mounting, a high transmission rate, and high connection reliability. These connectors are ideal boardto-board connectors for connecting the
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IEC60107-4-104
TR-NWT-001217)
MIL-STD-202F-101D
TR-NWT-001217
IEC60107-4-104
001217
MIL-STD-202F101D
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uPD65801
Abstract: UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813
Text: NEC Electronics Inc. CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, submicron gate arrays, targeted for applications requiring extensive integration and high speeds. The device
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PD65800
uPD65801
UPD65812
uPD65800
PD65810
PD65811
CMOS Transmission gate Specifications
uPD65806
UPD65804
uPD65802
uPD65813
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nec naming rule
Abstract: L302
Text: NEC Electronics Inc. UNIVERSAL PCI SERIES MIXED-VOLTAGE 0.6-MICRON CMOS GATE ARRAYS March 1995 Preliminary Description Figure 1. Application Example NEC's Universal PCI Series gate array family provides designers with the flexibility and performance required to
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NNCD6.8G
Abstract: NNCD3.9G NNCD5.6G IEC1000 IEC1000-42 IEC1000-4-2 NNCD27G C10535E C11531E D1164
Text: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3G to NNCD7.5G, NNCD27G ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE : COMMON ANODE 5 PIN MINI MOLD PACKAGE DIMENSIONS This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on
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NNCD27G
IEC1000-4-2
IEC1000-4-
NNCD6.8G
NNCD3.9G
NNCD5.6G
IEC1000
IEC1000-42
NNCD27G
C10535E
C11531E
D1164
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2SJ460
Abstract: MEI-1202
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SJ460
2SJ460
MEI-1202
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d1072
Abstract: 2SK2541 MEI-1202 MF-1134
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWINGS in millimeter The 2SK2541 is a switching device which can be driven directly by a 1.5 V power source. The M O S FET has excellent switching characteristics and is suitable
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2SK2541
2SK2541
d1072
MEI-1202
MF-1134
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d1072
Abstract: 2SJ460 MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ460 is a switching device which can be driven directly by a 2.5 V power source. PACKAGE DRAWINGS in millimeter The MOS FET has excellent switching characteristics and is suitable
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2SJ460
2SJ460
d1072
MEI-1202
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2SJ461
Abstract: MARKING H19 C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461 is a switching device which can be driven directly by a PACKAGE DRAWINGS in millimeter 2.5 V pow er source. The M O S FET has excellent switching characteristics and is suitable
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2SJ461
2SJ461
MARKING H19
C10535E
MEI-1202
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2sj460
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SJ460
2SJ460
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Untitled
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
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2SK2541
2SK2541
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NEZ1414-4E 4 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1414-4E is power GaAs FET which provides high gain, high efficiency and high output power in Ku-band. The internal input and output matching enables guaran
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NEZ1414-4E
NEZ1414-4E
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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1310nm otdr
Abstract: NEC Fiber optic nec laser diode OTDR NDL7103 NDL7113 NDL7514P NDL7514P1 NDL7514P1C NDL7514P1D NDL7514PC
Text: DATA SHEET LASER DIODE NDL7514P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7514P Series is a 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode fiber.
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NDL7514P
1310nm
NDL7514P
SM-9/125
NDL7514P1
1310nm otdr
NEC Fiber optic
nec laser diode OTDR
NDL7103
NDL7113
NDL7514P1
NDL7514P1C
NDL7514P1D
NDL7514PC
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NEC diode 1550
Abstract: nec laser diode OTDR NDL7103 NDL7113 NDL7563P NDL7563P1 NDL7563P1C NDL7563P1D NDL7563PC NDL7563PD
Text: DATA SHEET LASER DIODE NDL7563P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7563P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode fiber.
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NDL7563P
1550nm
NDL7563P
SM-9/125
NDL7563P1
NEC diode 1550
nec laser diode OTDR
NDL7103
NDL7113
NDL7563P1
NDL7563P1C
NDL7563P1D
NDL7563PC
NDL7563PD
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5810A
Abstract: 2SD1615A 2SD1615 2SB1115 2SC1615 GP135
Text: DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS
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2SD1615,
2SD1615A
2SB1115,
2SD1115A
2SD1615
5810A
2SD1615A
2SB1115
2SC1615
GP135
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NDL5422P
Abstract: NDL5471R NDL5471RC NDL5471RD
Text: DATA SHEET PHOTO DIODE NDL5471R Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ120 µm InGaAs PIN PHOTO DIODE RECEPTACLE MODULE DESCRIPTION The NDL5471R Series is an InGaAs PIN photo diode receptacle module especially designed for a detector of long
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NDL5471R
NDL5471RC
NDL5471RD
NDL5422P
NDL5471RC
NDL5471RD
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TC-1654
Abstract: L33 TRANSISTOR transistor L33 MEI-1202 MF-1134 FN1A4M npn l33
Text: DATA SHEET SILICON TRANSISTOR FA1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters • Resistors Built-in TYPE 0.4+0.1 –0.05 2.8±0.2 C B 0.65+0.1 –0.15 1.5 • Complementary to FN1A4M
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SA733
Abstract: PA33 TC-3004B transistor 2sa733
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2370
Abstract: 2SK2369 MP-88
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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UPA1500
Abstract: IC-3326 DIODE u5 TEA-1037 IEI-1213 MEI-1202 MF-1134 IPA1500H fet 9411
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR »PA1500 N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The /iP A1500 is N-channel Power MOS FET Array in millimeters that built in 4 circuits and surge absorber designed for solenoid, m otor and lamp driver.
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uPA1500
/IPA1500H
12-Pin
IC-3326
DIODE u5
TEA-1037
IEI-1213
MEI-1202
MF-1134
IPA1500H
fet 9411
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2SJ461
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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