aircraft logic gates
Abstract: 50944
Text: ISSP1 High-Speed Interface Family ISSP Series Features continued Description NEC Electronics has expanded the first generation of Instant Silicon Solutions Platform (ISSP™) with the ISSP1 High-Speed Interface (HSI) family, a new class of ASIC device that
|
Original
|
PDF
|
|
UPD78F0818GK
Abstract: No abstract text available
Text: µPD78081x 8-BIT MICROCONTROLLERS WITH CAN CONTROLLER The µPD78081x devices are high-speed 8-bit microcontrollers with a CAN controller. The integration of the high-speed microcontroller and the CAN controller, together with the high level of integration using NEC’s
|
Original
|
PDF
|
PD78081x
35-micron
U13841EU1V0PB00
UPD78F0818GK
|
Untitled
Abstract: No abstract text available
Text: JJPD77018 16-Bit Fixed Point Digital Signal Processor NEC NEC Electronics Inc. November 1994 Introduction Features The /L/PD77018 is the low-power version of NEC’s SPRX fam ily of high-speed 16-bit digital signal processors DSPs . Low power consum ption, a 3-volt power re
|
OCR Scan
|
PDF
|
uPD77018
16-Bit
40-bit
|
9933B
Abstract: Pin Diagram of ic 9933b *9933b
Text: p PD77017 16-Bit Fixed Point Digital Signal Processor NEC NEC Electronics Inc. November 1994 Introduction Features The ¿¿PD77017 is the second in NEC's SPRX fam ily of high-speed 16-bit digital signal processors DSPs . Low power consum ption, a 3-volt power requirement, and
|
OCR Scan
|
PDF
|
uPD77017
16-Bit
PD77017
12K-word
ThepPD77017
9933B
Pin Diagram of ic 9933b
*9933b
|
2SA1424
Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912
Text: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and
|
OCR Scan
|
PDF
|
b427414
NE88900
NE88912
NE88933
NE88935
NE327
NE889
NE88900)
NE88935
2SA1424
2SA1228
G503
NE327
NE AND micro-X
2SA1223
|
Untitled
Abstract: No abstract text available
Text: DEC 2 1992 NEC NEC Electronics Inc. JJPD488130, 488170 18-M egabit Rambus DRAM Advance Information October 1992 Description Ordering Information The /L/PD488130 and juPD488170 Rambus DRAMs RDRAM™ are extremely-high-speed dynamic CMOS RAMs organized as 2M words by 8 or 9 bits. Using its
|
OCR Scan
|
PDF
|
JJPD488130,
/L/PD488130
juPD488170
500-megabyte/second
32-pin
PD488170
500-megabitr
|
2SA1463
Abstract: 2SC3736 MEI-1202 MF-1134
Text: DATA SHEET • NEC SILICON TRANSISTOR 2SA1463 HIGH SPEED SW ITCHING PIMP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION PACKAGE DIM ENSIONS The 2SA1463 is designed for power amplifier and high speed switching applications. in millimeters FEATURES
|
OCR Scan
|
PDF
|
2SA1463
2SA1463
2SC3736
MEI-1202
MF-1134
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC M O S INTEGRATED CIRCU IT 16-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTIO N The //PD784915 is a member of the NEC 78K/IV Series of microcontrollers equipped with a high-speed 16-bit CPU and a successor to the 78K/I Series 8-bit single-chip microcontrollers for VCR software servo control.
|
OCR Scan
|
PDF
|
16-BIT
//PD784915
78K/IV
16-bit
78K/I
/PD784915
/iPD784915,
/iPD78P4916,
PD784915
IEl-635
|
D1632
Abstract: DC1054A 1S2835A3 1S2835 1S2836 NEC DIODES 1S2836A4
Text: DATA SHEET NEC SILICON SWITCHING DIODES 1S2835,1 S2836 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODES : COMMON ANODE MINI MOLD FEATURES PACKAGE D IM ENSIO NS @ Low capacitance: Ct = 2.5 pF TYP. in m illim e te rs High speed switching: t rr = 4.0 ns M A X .
|
OCR Scan
|
PDF
|
1S2835
1S2836
D1632
DC1054A
1S2835A3
1S2836
NEC DIODES
1S2836A4
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 524,288 words x 32 bits x 4banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
|
OCR Scan
|
PDF
|
64M-bit
uPD4564323
864-bit
86-pin
|
1SS221
Abstract: ss221 1SS220 DC-1056A 1SS221A14
Text: DATA SHEET NEC SILICON SWITCHING DIODES 1SS220.1 SS221 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODES MINI MOLD FEATURES PACKAGE DIMENSIONS • Low capacitance: Ct = 4.0 pF M A X . in m illim e te r s • High speed switching: t rr = 3.0 ns M A X . 2.8 ± 0.2
|
OCR Scan
|
PDF
|
1SS220
1SS221
1SS220
1SS221
ss221
DC-1056A
1SS221A14
|
TA 1319 AP
Abstract: pd4564323
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564323 is a high-speed 67,108,864 bits synchronous dynamic random-access memories, organized as 524,288 words x 32 bits x 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
|
OCR Scan
|
PDF
|
uPD4564323
86-pin
UPD4564323
PD4564323.
PD4564323G5
TA 1319 AP
pd4564323
|
2sc1275
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC1927 is an NPN silicon epitaxial dual transistor that
|
OCR Scan
|
PDF
|
2SC1927
2SC1927
2SC1275,
2sc1275
|
AKR 121
Abstract: 4564821G5 A7 RFTA
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4564421, 4564821 64M-bit Synchronous DRAM 2-bank, LVTTL Description The /iPD4564421,4564821 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 8,388,608x4x2 and 4,194,304x8x2 wordxbitxbank , respectively.
|
OCR Scan
|
PDF
|
uPD4564421
64M-bit
/iPD4564421
864-bit
608x4x2
304x8x2
54-pin
004x0
AKR 121
4564821G5
A7 RFTA
|
|
|
d4516161
Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.
|
OCR Scan
|
PDF
|
uPD4516421
uPD4516821
uPD4516161
16M-bit
PD4516421,
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
d4516161
NEC 1216
D451616
4516161
IC-3394
ba6x
T8836
D4516161GS
d4516
|
p103 t020
Abstract: 5A/p103 t020
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 78356 A 16 BIT SINGLE-CHIP MICROCOMPUTER The yuPD78356(A) contains a high-speed, high-performance 16-bit CPU and a data bus whose width can be switched between 8 bits and 16 bits (bus sizing function). The /xPD78356(A) also contains an ultrahigh-speed A/D converter and high-speed D/A converter, which are
|
OCR Scan
|
PDF
|
P78356(
yuPD78356
16-bit
/xPD78356
/PD78P356
PD78356
U10669E
IEU-1395
FD78K/III)
p103 t020
5A/p103 t020
|
nec 2741
Abstract: PS2741
Text: DATA SHEET NEC PHOTO COUPLER PS2741 ELECTRON DEVICE H IG H SPEED M IN I FLAT PHOTO COUPLER PS2741 is a 5-pin high speed photo coupler containing a GaAIAs red light em ittin g diode for a light em itting device on input side and a P-N photo diode and a high speed am plifier transistor on output side on one chip.
|
OCR Scan
|
PDF
|
PS2741
PS2741
PS2741-E4
PS2741-F4
PS2741-E3,
PS2741-F3,
nec 2741
|
D4516821G5-A12
Abstract: nec 14t t4 bst 1046 xrba IC-3394 ba6x PD4516421 D4516821 nec 44pin SN1049
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT fd>D4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The jiPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.
|
OCR Scan
|
PDF
|
D4516421,
16M-bit
uPD4516421
uPD4516821
uPD4516161
216-bit
152x4x2,
288x16x2
44-pin
50-pin
D4516821G5-A12
nec 14t t4
bst 1046
xrba
IC-3394
ba6x
PD4516421
D4516821
nec 44pin
SN1049
|
D4564323
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET NEC MOS INTEGRATED CIRCUIT 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD4564323 is a high-speed 67,108,864 bits synchronous dynamic random -access memories, organized as 524,288 w o rd s x 3 2 b its x 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
|
OCR Scan
|
PDF
|
uPD4564323
86-pin
D4564323
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /;PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escription The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access m emories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.
|
OCR Scan
|
PDF
|
PD4516421,
16M-bit
216-bit
152x4x2,
576x8x2
288x16x2
44-pin
50-pin
S50G5-80-7JF3
|
NEC uPD 688
Abstract: CQ-111
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /i PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x
|
OCR Scan
|
PDF
|
uPD4516421
uPD4516821
uPD4516161
UPD4516421,
UPD4516821,
216-bit
152-word
576-word
288-word
x16-bit
NEC uPD 688
CQ-111
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 2 1 6-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x
|
OCR Scan
|
PDF
|
PD4516421
UPD4516421,
UPD4516821,
152-word
576-word
288-word
x16-bit
400-mil
44-pin
400-mil,
|
TC-5535
Abstract: MARKING J1A 2SC2946 MEI-1202 1661A TEB-1003 TC1661 2SC294
Text: DATA SHEET NEC MKKtKM SILICON TRANSISTOR 2SC2946 1 NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SC2946(1) is designed for High Speed Switching, especially in PACKAGE DIMENSIONS (in millim eters) Hybrid Integrated Circuits. FEATURES • High Voltage V ceo = 200 V
|
OCR Scan
|
PDF
|
2SC2946
IEI-1209)
TC-5535
MARKING J1A
MEI-1202
1661A
TEB-1003
TC1661
2SC294
|
A91A
Abstract: pd45256 toyo uPD45256441G5-A10B-9JF uPD45256841G5-A10B-9JF AYAA
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT jUPD45256441,45256841,45256163 256M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45256441, 45256841, 45256163 are high-speed 268,435,456 bit synchronous dynamic random-access memories, organized as 16,777,216x4x4, 8,388,608x8x4, 4,194,304x16x4 word x bit x bank , respectively.
|
OCR Scan
|
PDF
|
uPD45256441
uPD45256841
uPD45256163
256M-bit
216x4x4,
608x8x4,
304x16x4
54-pin
M13394EJ3V0DS00
A91A
pd45256
toyo
uPD45256441G5-A10B-9JF
uPD45256841G5-A10B-9JF
AYAA
|
