New England Microwave
Abstract: 1RF 560 L-018 PIN DIODES OFFER HIGH POWER HF BAND SWITCHING
Text: NEU ENGLAND MlCROüJAVE bb De I bSbBmilB □□□□□45 7 I N tM \ r - 5 7 - // ISOLATION INTRODUCTION New England Microwaved Series 61 SPST PIN diode switches address a broad range of switching requirements, from .01 to 18 GHz. Designed for high reliability, NEM switches operate over the entire mili
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bSb3403
New England Microwave
1RF 560
L-018
PIN DIODES OFFER HIGH POWER HF BAND SWITCHING
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93051
Abstract: 622M010 625M010 LTDT
Text: NEW ENGLAND MICROWAVE 7fl N0 Ì \ D E | bShB403 DOODllD 3 | TS"/'// D new en d w iD m ic ro w n j€ c o rp o ra tio n 1-18 GHZ LOW TRANSIENT SPDT SWITCHES MODELS 622M010/625M010 r v I •4 +r ISOLATION FEATURES • 1-18 GHz Frequency Range in a Single Unit
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DDGD11D
622M010/625M010
MIL-STD-883
MIL-STD-883,
93051
622M010
625M010
LTDT
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Frequency Generator 1MHz
Abstract: step recovery diode New England Microwave NE12003
Text: 6563403 NEW ENGLAND MICROWAVE. . bh ' 66C 00087 DE | b S b 3 4 Q 3 0DD0DÛ7 I T ^ o n -iS 1 NÉW ÉNGLM1D MICROWWe CORPORATION 26 HAMPSHIRE DRIVE, HUDSON, NEW HAMPSHIRE 03051 603 883-2900 STEP RECOVERY AND MULTIPLIER DIODES NE12000 The NE12000 step recovery and multiplier diodes are epitaxial silicon varactors which achieve high
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5b3403
0D00DÃ
NE12000
NE12000
syn8-11
Frequency Generator 1MHz
step recovery diode
New England Microwave
NE12003
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New England Microwave
Abstract: No abstract text available
Text: NEW ENGLAND MICROWAVE 7fl N0l\ D e | hSb34D3 D O D D 115 7 J “ ' M€W€MGLN1D MICROWKI€ CORPORWIOli MINIATURE SP3T SWITCHES ISOLATION FEATURES • Hermetic, meeting MIL-STD 883, Method 1014, Condition A • Miniature, compact design 70 50 • Large choice of package styles
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hSb34D3
New England Microwave
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New England Microwave
Abstract: 54F04
Text: NEU ENGLAND MICROWAVE bb D Ë J hSb34Û3 0000070 b | “; -p 5Z~£! New Product Bulletin PIN SWITCH DRIVERS A - wide variety of models: For Ultra-Fast switching 3 ns For High PRR (to 20 MHZ) For Low Power consumption • Output currents from 10 mA to 75 mA
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hSb34D3
0D0D070
230cc
20MHZPRR.
New England Microwave
54F04
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ltkd
Abstract: F207 RTT4 20T60 400C
Text: NEU ENGLAND MICROWAVE bt, D E '! b 5 b 3 4 ü 3 □□00G7E □ ' T-&Q.2! New Product Bulletin PIN SWITCH DRIVERS • High-speed switching of PIN diodes, le ss than 10 nanoseconds • Useful for switching rates to 10 MHZ • Choice of lo g ic , for inverting or
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b5b34G3
00G75
T-52-2Ã
MIL-STD-883
ltkd
F207
RTT4
20T60
400C
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Butler Matrix
Abstract: S0014 a3315 New England Microwave
Text: Pub. M1847.2-49 binaren Butler Matrices For Multibeam Antennas and Matrix Amplifiers 12 Som erset House 6635 Kirkville Road East Syracuse H ussar Court New York 13057 W aterlooville USA Ham pshire TEL: (315) 432-8909 England P 0 7 7SG UK O RDER: (800) 544-2414
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M1847
Butler Matrix
S0014
a3315
New England Microwave
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New England Microwave
Abstract: nem 6500 pj 37
Text: NEU ENGLAND IICROUAVE bb D e | h5ti34Q3 DODDObB ‘i New Product Bulletin ' T 'S l'- i / SPST DROP-IN MODULE SERIES 6500, INTEGRAL ECL FEATURES I Ultra-High-Speed; Rise Time less than 1 nanosecond: Compact, Miniaturized; 1.000 x .650 x .130 Reliable Thin-Film design,
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MIL-STD-883
New England Microwave
nem 6500
pj 37
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pj 37
Abstract: PJ37 New England Microwave
Text: NEU ENGLAND IICROUAVE bb D e | h5ti34Q3 DODDObB ‘i New Product Bulletin ' T 'S l'- i / SPST DROP-IN MODULE SERIES 6500, INTEGRAL ECL FEATURES I Ultra-High-Speed; Rise Time less than 1 nanosecond: Compact, Miniaturized; 1.000 x .650 x .130 Reliable Thin-Film design,
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MIL-STD-883
pj 37
PJ37
New England Microwave
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4B0205
Abstract: No abstract text available
Text: Anaren 6635 Kirkville Road Publication No. M1964-79 Low Cost Power Dividers 12 Somerset House East Syracuse Hussar Court New York 13057 W aterlooville USA Hampshire TEL: 315 432-8909 England P07 7SG UK ORDER: (800)544-2414 TEL: (+44) 1705 232392 FAX: (315) 432-9121
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M1964-79
4B0205
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code J4 diode
Abstract: RF E4
Text: NEW ENGLAND MICROWAVE 7fl D e | hSb34D3 D0DD115 7 D 7^5“/-// N0a/ CriGL^MD M OO W NIG CORPORATION ISOLATION FEATURES • Hermetic, meeting MIL-STD 883, Method 1014, Condition A • Miniature, compact design 70 50 • Large choice of package styles • Switching speeds down to 3 nanoseconds rise time
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hSb34D3
code J4 diode
RF E4
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New England Microwave
Abstract: E6 DIODE E8 55A DIODE RF E4 code J4 diode
Text: NEW ENGLAND MICROWAVE 7fl D e | hSb34D3 D0DD115 7 D 7^5“/-// N0a/ CriGL^MD M OO W NIG CORPORATION ISOLATION FEATURES • Hermetic, meeting MIL-STD 883, Method 1014, Condition A • Miniature, compact design 70 50 • Large choice of package styles • Switching speeds down to 3 nanoseconds rise time
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hSb34D3
New England Microwave
E6 DIODE
E8 55A DIODE
RF E4
code J4 diode
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NE11302
Abstract: 50MHZ NE11301 NE11303 NE11304 NE11305 NE11306 NE11307 NE11308 Cj451
Text: 6563403 NEW ENGLAND MICROWAVE 66 C 00088 bb D Ë J b 5 L ,3 4 0 3 D □□ □□ O fifl 7 ^ 0 7 - /^ 3 I MÇW dNGLhND NICROWm€ CORPORATION 26 HAMPSHIRE DRIVE, HUDSON, NEW HAMPSHIRE 03051 603 883-2900 30 VOLT SILICON TUNING VARACTORS N E11300 The N E 1 1 3 0 0 tuning varactors are silicon abrupt junction devices. They offer the highest Q and low
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NE11300
NE11300
50MHZ
Vr0V/VR60V
NE11601
NE11602
NE11603
NE11604
NE11605
NE11606
NE11302
NE11301
NE11303
NE11304
NE11305
NE11306
NE11307
NE11308
Cj451
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NE14201
Abstract: NE14202 NE14203 NE14204 NE14205 NE14206 NE14207 NE14208 NE14209
Text: 6563403 NEW ENGLAND MICROWAVE _ ' ' '66C 00085 bb DE | b S t i 3 4 0 3 OOOODflS fl | ~ N€W <ENGLmD MICROWme CORPORATION 2 6 H A M P S H IR E D R IV E , H U D S O N , N E W H A M P S H IR E 0 3 0 5 1 6 0 3 8 8 3 - 2 9 0 0 HIGH VOLTAGE P IN /N IP DIODES
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b5b3403
NE14200/14200R
NE14200-14200R
Mil-S-19500.
frequenc02
NE14203
NE14204
NE14205
NE14206
NE14207
NE14201
NE14202
NE14208
NE14209
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"RF diode"
Abstract: 1N4148 230CC F-05 solid state RF HIGH-POWER SWITCH diode t29 1n4148 high speed solid state diode
Text: NEliJ ENGLAND MICROWAVE Tb D e J b S t , 34 D 3 O O Q O I S T S f ' 'T-SZ-Z! DRIVERS DEFINED m S im Sill A driver is an interface between digital circuitry TTL, ECL, etc. and solid state RF/m icrowave switch circuitry. The switch usually consists of PIN/NIP diodes or Field Effect
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solid state RF HIGH-POWER SWITCH
Abstract: 1N4148 230CC F-05 TS2Z 1n4148 high speed solid state diode
Text: NEliJ ENGLAND MICROWAVE Tb D e J bS t,3 4 D3 OOQOIST S f' 'T-SZ-Z! DRIVER S D EFIN ED m S im Sill A driver is an interface between digital circu itry TTL, ECL, etc. and solid state R F /m icro w a v e sw itch circuitry. The sw itch usually co n sists o f PIN /N IP diodes o r Field Effect
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very simple walkie talkie circuit diagram
Abstract: CIRCUIT DIAGRAM FOR WIRELESS DATA MODEM walkie talkie circuit diagram simple walkie talkie circuit diagram walkie talkie modem simple walkie talkie db9f pcb connector repeater receives 433.92 walkie talkie walkie talkie components
Text: RS232 LOW COST RF MODEM 2 FM-232C-433 FEATURES • • • • • • • • • • • • • INDUSTRY STANDARD RS-232. AUTOMATIC DATA PACKETISING AND ERROR CHECKING Transparent link . AVAILABLE AT 433MHz (10mW ERP) RANGE UPTO 120 METRES NETWORK CONFIGURABLE, USER SELECTABLE AS
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RS232
FM-232C-433
RS-232.
433MHz
9-30VDC
very simple walkie talkie circuit diagram
CIRCUIT DIAGRAM FOR WIRELESS DATA MODEM
walkie talkie circuit diagram
simple walkie talkie circuit diagram
walkie talkie modem
simple walkie talkie
db9f pcb connector
repeater receives 433.92
walkie talkie
walkie talkie components
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NEMC1987
Abstract: No abstract text available
Text: NEU ENGLAND MICROQJAVE Tb 7 ^ 5 7 -// D E | bSb34D3 00Q01 20 h | ~ D h€W GIGLhND MOOW &VK CORPORATION SPDT UHF SWITCH MODEL 6466 ' 100 MHz to 1.5 GHz Frequency Range .375 inch square package, .125 thickness integral TTL compatible Driver SP2T toggle configuration
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LSb34D3
su-15V
MIL-STD-883
MIL-STD-883,
NEMC1987
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Adams-Russell
Abstract: No abstract text available
Text: Distributors SOUTHEAST Precision Components P.O. Box 9258 Coral Springs, FL 33075 TEL: 305-344-4274 FAX: 305-753-4107 SOUTHERN CALIFORNIA L & M Components 8939 S. Sepulveda Blvd. Suite 104 Los Angeles, CA 90045 TEL: 213-417-3044 FAX: 213-417-3470 NORTHERN CALIFORNIA
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Untitled
Abstract: No abstract text available
Text: The MILMEGA Series 2000 Broadband Class A Solid State Microwave Amplifier Modules & Kits High reliability combined with compact size and low weight make the MILMEGA amplifier and kit family ideal for use in commercial applications where space is at a premium and portability can be
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800MHz
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Untitled
Abstract: No abstract text available
Text: Catalog 82068 This Is AMP Today Revised 1-96 Americas Regional Center AMP do Brasil, Ltda. AMP incorporated AMP H arrisburg, PA. U.S.A. Phone: 717-564-0100 FAX: 717-986-7575 Sac Paulo, Brazil Phone: 55-11-861-1311 FAX: 55-11-861-0397 Harrisburg, PA, U.S.A.
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Untitled
Abstract: No abstract text available
Text: This Is AMP Today www.am p.com Americas Regional Center AMP Harrisburg, PA, U.S.A. Phone: 717-564-0100 FAX: 717-986-7575 AMP S.A. Argentina C.I.Y.F. Buenos Aires, Argentina Phone: 54-1-733-2000 FAX: 54-1-793-9331 AMP do Brasil, Ltda. Sao Paulo, Brazil Fhone 55-11-861-1311
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Untitled
Abstract: No abstract text available
Text: This is AMP Today www.am p.com Americas Regional Center AMP do Brasil, Lida. AMP Incorporated AMP Harrisburg, PA, U.S.A. Phone: 717-564-0100 FAX: 717-986-7575 Sao Paulo, Brazil Phone: 55-11-861-1311 FAX: 55-11-861-0397 Harrisburg, PA, U.S.A. Phone: 800-522-6752
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Untitled
Abstract: No abstract text available
Text: Catalog 82618 This Is AMP Today Revised 12-95 Americas Regional Center AMP do Brasil, Ltda. AMP Incorporated AMP Harrisburg, PA, U.S.A. Phone: 717-564-0100 FAX: 717-986-7575 Sao Paulo, Brazil Phone: 55-11-861-1311 FAX: 55-11-861-0397 Harrisburg, PA, U.S.A.
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