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    NEW ENGLAND SEMICONDUCTOR 2N2326A Search Results

    NEW ENGLAND SEMICONDUCTOR 2N2326A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NEW ENGLAND SEMICONDUCTOR 2N2326A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    2N2327A

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SILICON CONTROLLED RECTIFIERS TO-39/TO-5 PACKAGE TO-39 jit^ nr fj! TO-5 UT li ! V drm VOLTS IT AMPS 80°C I drm HA VOLTS V gt Igt |iA mA WATTS 2N2322 25 1.6 10 0.35/0.8 200 2.0 0.1 2N2323 50 1.6 10 0.35/0.8 200 2.0 0.1 2N2323A 50


    OCR Scan     		PDF 2N2322 2N2323 2N2323A 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A

    New England Semiconductor 2n2326a

    Abstract: 2N2324A 2N2325 2N2322 2N2323 2N2323A 2N2324 2N2325A 2N2326 2N2326A
    Text: NEW ENGLAND SEMICONDUCTOR SILICON CONTROLLED RECTIFIERS TO-39/TO-5 PACKAGE DEVICE TYPE V drm VOLTS IT AMPS 80°C ¡D RM jiA Vgt VOLTS I gt HA mA Ih P gm WATTS TO-39 2N2322 25 1.6 10 0.35/0.8 200 2.0 0.1 fjl 2N2323 50 1.6 10 0.35/0.8 200 2.0 0.1 2N2323A 50


    OCR Scan     		PDF O-39/TO-5 2N2322 2N2323 2N2323A 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A New England Semiconductor 2n2326a

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


    OCR Scan     		PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier