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    onsemi NGTB30N135IHRWG

    IGBT TRENCH/FS 1350V 60A TO247
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    Rochester Electronics NGTB30N135IHRWG 39,221 1
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    Flip Electronics NGTB30N135IHRWG

    IGBT TRENCH FS 1350V 60A TO247
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    DigiKey NGTB30N135IHRWG Tube 250
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    Rochester Electronics LLC NGTB30N135IHRWG

    IGBT TRENCH FS 1350V 60A TO247
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    DigiKey NGTB30N135IHRWG Bulk 103
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    NGTB30N135IHRWG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGTB30N135IHRWG On Semiconductor NGTB30N135I - IGBT 1350V 30A FS2-RC Induction Heating Original PDF

    NGTB30N135IHRWG Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    30n135ihr

    Abstract: No abstract text available
    Text: NGTB30N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low


    Original
    NGTB30N135IHRWG NGTB30N135IHR/D 30n135ihr PDF