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    NGTB40N65IHL2WG Price and Stock

    Rochester Electronics LLC NGTB40N65IHL2WG

    IGBT TRENCH FS 650V 80A TO-247-3
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    onsemi NGTB40N65IHL2WG

    IGBT TRENCH FS 650V 80A TO-247-3
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    Rochester Electronics NGTB40N65IHL2WG 10,625 1
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    NGTB40N65IHL2WG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGTB40N65IHL2WG ON Semiconductor Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 650V 40A TO-247 Original PDF

    NGTB40N65IHL2WG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

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    Abstract: No abstract text available
    Text: NGTB40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		NGTB40N65IHL2WG NGTB40N65IHL2W/D PDF