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    NIHON INTER ELECTRONICS Search Results

    NIHON INTER ELECTRONICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    NIHON INTER ELECTRONICS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Nihon Inter Electronics

    Abstract: No abstract text available
    Text: Safe Using on NIEC Products In the interest of product improvement, Nihon Inter Electronics Corporation NIEC reserves the right to change specifications without notice, and so use of the updated version of Date Book or Specifications and Catalog are requested.


    Original     		PDF

    MB111

    Abstract: marking JB SCHOTTKY BARRIER DIODE 25CC
    Text: 10A120VTm150V Fully Molded similar to TO-220AC FSHS10A12 ft«» Nihon Inter Electronics Corporation Specification yT y i/ayh Construction Schottky Barrier Diode Application High Frequency Rectification 1 j ir—K MAXIMUM RATINGS Ta=25'C: Unless otherwise specified


    OCR Scan     		PDF 10A120VTM150V O-22QAC FSHS10A12 UL94V-0fi. UL94V-0 MB111 marking JB SCHOTTKY BARRIER DIODE 25CC

    10a45

    Abstract: marking WMM
    Text: S BD Anode camman 10A 45V Tjw150V FRQS10A045 Fully Molded sim ilar to TO-22QAB ttíf# 0 * ^ Nihon Inter Electronics Corporation Specification. mm ^ Construction '> 3 y Schottky Barrier Diode Application High FVequenty Rectification MAXIMUM RATINGS Ta=25°C: Unless otherwise specified


    OCR Scan     		PDF Tjw150V TQ-220AB FRQS10A045 FRQS10A045 20mVRMs 100kHz UL94V-0ISÂ UL94V-0 10a45 marking WMM

    5A45V

    Abstract: FSHS05A045 1331C FC7 marking
    Text: 5A45VTm150V ' Ííj J'¡L Fully Molded similar to TO-220AC ' FSHS05A045 tttf* Nihon Inter Electronics Corporation Specification Construction '> 3 -y T Schottky Barrier Diode Application High Frequency Rectification fflìÉ ÿA Jr-Y MAXIMUM RATINGS Ta—25 C- Unless otherwise specified


    OCR Scan     		PDF 5A45V Tjw150V -220AC FSHS05A045 1331C FSHS05A045 25oCIVm 20mVRMs 100kHzlTypical FC7 marking

    diode 1G8

    Abstract: nihon diode 1G8
    Text: 1A 8 0 0V Axial Lead Type 1 /4 : Type : 1 G8 Nihon Inter Electronics Corporation : I* Constraction: Axial Lead, Diffusion-type Silicon Diode : -«Sniffi Application : For General Use l ü ; * Æ f ê / Maximum Rating m / Voltage Ratings ia * f s Symbol


    OCR Scan     		PDF 11M0JU, diode 1G8 nihon diode 1G8

    ci 4502

    Abstract: ECT180
    Text: 4A 35V Tjw150V 7¿Zfr n íZ h FSQS04A035 Fully Molded similar to TO-220AC ttfl» Nihon Inter Electronics Corporation Specification. Construction '> 3 * Schottky Barrier Diode Application High Frequency Rectification I I MAXIMUM RATINGS Ta=25cC: Unless otherwise specified


    OCR Scan     		PDF 35VTjw150V FSQS04A035 50HzIESmffiKftà FSQS04A035 20mVrms 100kHz UL94V-0 ci 4502 ECT180

    FCQS30A045

    Abstract: No abstract text available
    Text: 30A 45V Tjw150V # y — h '= i* y SBD Fully Molded similar to TO-22QAB Cathode common FC Q S30A045 tt ti* Nihon Inter Electronics Corporation Specification ' > h -y h y T Hr— K Construction Schottky B arrier Diode Application H igh Frequency Rectification


    OCR Scan     		PDF Tjw150V O-22QAB FCQS30A045 1181C FCQS30Ar UL94V-0I UL94V-0

    TM 5503

    Abstract: UCU20C20 co140 5S24
    Text: 20A 200V 31ns Similar to TO-263 # y — Fast Recovery Cathode common UCU20C20 ttif* Nihon Inter Electronics Corporation Specification. mm fr d Construction Diffusion Type Silicon Diode iWi/ r I implication High Frequency Rectification MAXIMUM RATINGS T a= 2 5 t: Unless otherwise specified


    OCR Scan     		PDF O-263 UCU20C20 III11IIM c40-3 UL94V-0 UCU20Crj TM 5503 UCU20C20 co140 5S24

    l55a

    Abstract: T0220AB
    Text: # y ~ F = i^ e > - 8A 35VTjw150V S B D Fully Molded similar to TO-22QAB Cathode common FCQS08A035 tttis 0 * ^ f c ïtè tt Nihon Inter Electronics Corporation Specification. s' Construction ilii Application Schottky B arrier Diode H igh Frequency Rectification


    OCR Scan     		PDF 35VTjw150V T0220AB FCQS08A035 20mVRMs 100kHz FCQS08A035 FCQS08Ar UL94V-0 l55a T0220AB

    FCHS10A12

    Abstract: No abstract text available
    Text: 1 0 A 1 2 0 V T jw 1 5 0 V Fully Molded similar to TO-220AB FCHS10A12 ttii# Nihon Inter Electronics Corporation Specification is 3 y Construction Schottky Barrier Diode Application High Frequency Rectification MAXIMUM RATINGS Ta=25°C Unless otherwise specified


    OCR Scan     		PDF 120VTjw150V FCHS10A12 50HzIE 20mVRMs 100kHz FCHS10A12 UL94V-0ISSPPP) UL94V-0

    FSQS15A045

    Abstract: 118T
    Text: 15A 45V Tjw150V Fully Molded simitar to TO-220 FSQ S15A 045 tti* * Nihon Inter Electronics Corporation Specification -y h yT Schottky B arrier Diode Application H igh Frequency Rectification • I K Construction MAXIMUM RATINGS Ta=25°C: U nless otherw ise specified


    OCR Scan     		PDF Tjw150V O-220 FSQS15A045 /l-50Hz FSQS15Ar UL94V-0 118T

    UCU20C30

    Abstract: marking WMM UCU20C
    Text: # y— Fast Recovery Cathode common 20A 300V 33ns UCU20C30 Similar to TO-263 i± m m Nihon Inter Electronics Corporation Specification. FRD Construction ff lìÉ Application Diflusion Type Silicon Diode High Frequency Rectification MAXIMUM RATINGS Ta=25°C: Unless otherwise specified


    OCR Scan     		PDF O-263 UCU20C30 c40-3 UL94V-0 UCU20Crj UCU20C30 marking WMM UCU20C

    FCHS20A

    Abstract: WH 1602 K FCHS20A045 RECT18
    Text: 20A 45V Tjw150V Fully Molded similar to TO-220AB FCHS20A045 0 * ^ Nihon Inter Electronics Corporation Specification «5t 'y 3 y h Construction ff lii Application J iy Ç /iË fê y r^V K Schottky Barrier Diode rWijRliiSSIifliiffl High Frequency Rectification


    OCR Scan     		PDF Tjw150V O-220AB FCHS20A045 20mVRMs 100kHz FCHS20A045 FCHS20Ar UL94V-0m UL94V-0 FCHS20A WH 1602 K RECT18

    Untitled

    Abstract: No abstract text available
    Text: nil Nihon Inter Electronics Corporation 1.7A Avg 100 Volts ~X SBD EA20QS10 EA20QS10-F ) (~ MAXIMUM RATINGS •OUTLINE DRAWING(mm) ' ' ' Type S y m b o r\^ Rating < v> & L l -}ifi ',ti h. Repetitive Peak Reverse Voltage f- fl* i/i P.C.Board mounted * Average


    OCR Scan     		PDF EA20QS10 EA20QS10-F EA20QSI0

    Diodo Schottky

    Abstract: DIODO
    Text: 4A 65VT»150t Fully Molded similar to TO-220AC FSQS04A065 ttfl« 0 * ^ Nihon Inter Electronics Corporation Specification. lie 'S3 y Construction f f lìÉ Application h K ' 7 ? ' 4 Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS Ta=25cC Unless otherwise specified


    OCR Scan     		PDF 65VTjw150V O-22QAC FSQS04A065 50Hzhalf FSQS04A065 20mVRMS 100kHz UL94V-0 Diodo Schottky DIODO

    FRQS20A045

    Abstract: UL94V-01
    Text: SBD Anode common 20A 45V Tjw150V Fully Molded similar to TO-22QAB FRQS20A045 tttiS Nihon Inter Electronics Corporation Specification '> 3 '7 h y r yj Construction Schottky Barrier Diode Application High Frequency Rectification • k MAXIMUM RATINGS Ta = 25°C Unless otherwise specified


    OCR Scan     		PDF 45VTjw150V O-22QAB FRQS20A045 FRQS20Ar UL94V-01ggp UL94V-0 UL94V-01

    FCQS20A045

    Abstract: FCQS20
    Text: 20A 45V Tjw150V 2 y — h' = • ¥ > - SBD Fully Molded similar to TO-22QAB Cathode mmmon FCQS20A045 tttf* Nihon Inter Electronics Corporation Specification Construction '> 3 y h y 7 Schottky Barrier Diode Application High Frequency Rectification M cxm z h- K


    OCR Scan     		PDF 20A45VTÂ TQ-220AB FCQS20A045 FCQS20Ar UL94V-0 FCQS20

    RECTIFIER DIODES ON Semiconductor

    Abstract: kyosan POWER kyosan THYRISTOR GTO
    Text: NIEC, THE VITAL ELEMENT Nihon Inter Electronics Corporation NIEC was the first company to manufacture Silicon Rectifier Diodes in Japan. Founded in 1957 by the parent company, Kyosan Electric Mfg. Co., Ltd. NIEC manufactures high quality power semiconductor products which include Power


    OCR Scan     		PDF

    diode F 82 bp

    Abstract: DIODE BP ZF8.2 EC10QSO ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT
    Text: QUANTUM MARKETING INTERNATIONA* a n Nihon Inter Electronics Corporation AUTHORIZED AGENT Case Style Type Circuit E C 10DS1 EC10DS2 EC10DS4 EC10DS6 R ectifier Diode D 64 lo V FM (A) (V) 1.0 1.1 .55 EC10Q S03 EC10QSO_4 Schottky Barrier Diode (S.B.D.) Single C hip


    OCR Scan     		PDF 10DS1 EC10DS2 EC10DS4 EC10DS6 EC10Q EC10QSO 10QS05 10QS06 EC10QS10 EC15Q diode F 82 bp DIODE BP ZF8.2 ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT

    fcqs10a045

    Abstract: 10a45 IMTIA
    Text: SBD Cathode common 10A 45V Tjw150V Fully Molded similar to TO-22QAB FCQS10A045 Nihon Inter Electronics Corporation Specification. mm Construction v ' s y h y 7 y j Schottky B arrier Diode Application H igh Frequency Rectification k MAXIMUM RATINGS T a = 25°C U nless otherw ise specified


    OCR Scan     		PDF 10A45VTjw150t TQ-220AB FCQS10A045 UL94V-0 10a45 IMTIA

    DIODE w2x

    Abstract: No abstract text available
    Text: 15A 8 0 V Tjvt1 5 0 V Fully Molded sim ilar* TO-220 FSHS15A08 ttfl* 0 * ^ > $ —fc lté í± Nihon Inter Electronics Corporation Specification yr I Schottky Barrier Diode Application High Frequency Rectification ïK^CÆi'fê' I MAXIMUM RATINGS Ta=25°C: Unless otherwise specified


    OCR Scan     		PDF 80VTjw150V O-220 FSHS15A08 FSHS15A08 20mVRMS 100kHz FSHS15ATJ UL94V-0f UL94V-0 DIODE w2x

    FCQS30A065

    Abstract: 2007A
    Text: SBD Cathode common 30A 65V Tjw150 V FCQS30A065 Fully Molded similar to TO-22QAB ttflW Nihon Inter Electronics Corporation Specification Construction a -y h y r Schottky Barrier Diode n r — k m Application H High Frequency Rectification MAXIMUM RATINGS Ta—25°C: Unless otherwise specified


    OCR Scan     		PDF 65VTjw150V TQ-220AB FCQS30A065 FCQS30Ar UL94V-0I UL94V-0 2007A

    Untitled

    Abstract: No abstract text available
    Text: r — SB D Anode common 20A 120VTjw150V FRHS20A12 Fully Molded similar to TO-22QAB ttfl* 0 * ^ Nihon Inter Electronics Corporation Specification mm Construction ' > 3 -y h y T jfs f Schottky Barrier Diode K m Application High Frequency Rectification MAXIMUM RATINGS T a = 25'C: Unless otherwise specified


    OCR Scan     		PDF 120VTjw150V O-22QAB FRHS20A12 20mVRMs FRHS20A12 FRHS20Ar UL94V-0

    Untitled

    Abstract: No abstract text available
    Text: 3A 10 0 V Diode 1/4 S M D Type : Type : NSD03A10 Nihon Inter Electronics Corporation Contraction: Surface Mounting,Diffusion-type Silicon Diode ± û.2 2j ffljfe : Application : Rectification of Power Sourses 0 ./& Í 7 .0 *z Ai 0 O 3 A T 3! S ^ 'DC AL


    OCR Scan     		PDF NSD03A10 NSD03A10