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Untitled Abstract: No abstract text available Text: ShE D INTER F E T CORP • 4fl2bfiflö ODOOSS4 7 ■ D12 *T -2 .9 -a 7 NJ28D Process SILICON JUNCTION FIELD-EFFECT TRANSISTOR • Monolithic Dual Construction • Low Noise, High Gain Amplifier Absolute Maximum Ratings Gate Current, Ig 10mA Operating Junction Temperature, Tj	OCR Scan	PDF	NJ28D
NJ28D Abstract: No abstract text available Text: ALLEGRO MICROSYSTEMS INC 13 D • 0 S D M 33 Ô G D 037 SR 7 ■ ALGR T-91-01 P R O C E S S NJ28D Process NJ28D Dual N-Channel Junction Field-Effect Transistor P rocess N J28D is a monolithic dual N-channel junction field-effect transistor. It is similar to Process	OCR Scan	PDF	T-91-01 NJ28D NJ35D, NJ28D
NJ32 Abstract: THJ5486 THJ5459 THJ5484 THJ5485 THJ55456 THJ55466 THJ55476 Text: ALL E GR O M I C R O S Y S T E M S 8514019 SPRAGUE. INC T3 » • D50433Ô SE M IC O N D S/IC S D D G 3 S 6 1 3 ■ ALÛR 93D 0 3 5 8 1 3 > 7"-2 ?*2.S JUNCTION FIELD-EFFECT TRANSISTO R CH IPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh	OCR Scan	PDF	D5D433fi DQQ3S61 THJ5459 THJ5484 THJ5485 THJ6449 THJ5450 THJ6451 NJ132L THJ6452 NJ32 THJ5486 THJ55456 THJ55466 THJ55476
Untitled Abstract: No abstract text available Text: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. *13 D • QSG433Ô a D G 3 b ì T 7 ~ Ì m ^ S E M IC O N D S / I C S 930 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at Tfl = 25°C lo ss	OCR Scan	PDF	QSG433Ã 03616J) NJ35D
Untitled Abstract: No abstract text available Text: SPRAGUE/S EM IC ON D GROUP 851 4019 SPRAGUE, ^ D • S E M I C O N D S / ICS 93D 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at TA = 25°C loss V gS[oH) Igss V BHJGSS Device Type 2N3954	OCR Scan	PDF	03616J) 2N3954 2N3955 2N3956 2N3957 2N5045 2N5046 2N5047 2N5196 2N5197