F42 equivalent
Abstract: IF9030 NJ903L
Text: Databook.fxp 1/13/99 2:09 PM Page F-42 F-42 01/99 NJ903L Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance G D-S S-D Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig
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Original
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NJ903L
IF9030
F42 equivalent
IF9030
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PDF
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ns 1000 n
Abstract: NJ903 IFN5432 IFN5433 IFN5434
Text: Databook.fxp 1/13/99 2:09 PM Page F-40 F-40 01/99 NJ903 Process Silicon Junction Field-Effect Transistor ¥ Analog Switch ¥ Digital Switch ¥ Low-Noise Amplifier G D-S S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj
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Original
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NJ903
IFN5432
IFN5433
IFN5434
ns 1000 n
IFN5432
IFN5433
IFN5434
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PDF
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J177. P-CHANNEL. TO-92
Abstract: 2N4393 2N5021 2N4856 2N5116 datasheet for transistor 2n4860 interfet J174 smp4856 2N4391
Text: Databook.fxp 1/14/99 11:30 AM Page B-13 B-13 01/99 2N4391, 2N4392, 2N4393 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low On Resistance Analog Switches ¥ Choppers ¥ Commutators 2N4391 At 25°C free air temperature
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Original
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2N4391,
2N4392,
2N4393
2N4391
2N4392
O-226AB
O-92/18)
J177. P-CHANNEL. TO-92
2N4393
2N5021
2N4856
2N5116
datasheet for transistor 2n4860
interfet
J174
smp4856
2N4391
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PDF
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IFN5433
Abstract: IFN5432 IFN5434 c705
Text: Databook.fxp 1/13/99 2:09 PM Page B-45 B-45 01/99 IFN5432, IFN5433, IFN5434 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Analog Low On Resistance Switches ¥ Choppers IFN5432 At 25°C free air temperature: Static Electrical Characteristics
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Original
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IFN5432,
IFN5433,
IFN5434
IFN5432
IFN5432)
IFN5433)
IFN5433
IFN5432
IFN5434
c705
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PDF
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2N6449
Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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Original
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2N3821,
2N3822
2N3821
2N6449
MIXER U350
TR320
2N4861
2N4858A
2n4117 equivalent
J231 2N5461
2N6450
CD860
SMP5116
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PDF
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IF9030
Abstract: TOD52 B4001 databook amplifier
Text: Databook.fxp 1/13/99 2:09 PM Page B-40 B-40 01/99 IF9030 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier At 25°C free air temperature: Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage
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Original
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IF9030
NJ903L
IF9030
TOD52
B4001
databook amplifier
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PDF
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IF3601
Abstract: 2N6449 2N6450 IF9030 interfet B-28 IF140 IF140A IF142 IF1320
Text: Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current
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Original
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2N6449,
2N6450
2N6449
IF3601
2N6449
2N6450
IF9030
interfet
B-28
IF140
IF140A
IF142
IF1320
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PDF
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Untitled
Abstract: No abstract text available
Text: L ALLEGRO MICROSYSTEMS INC •=13 DSDM33Ö QQ03771 ö ■ T-91-01 P R O C E S S NJ903 Process NJ903 N-Channel Junction Field-Effect Transistor Proce ss N J903 is an N-channel junction fleldeffect transistor designed for very low O N resistance analog or digital switching applications.
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OCR Scan
|
DSDM33Ã
QQ03771
T-91-01
NJ903
050433fl
0G03772
|
PDF
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Untitled
Abstract: No abstract text available
Text: 9 -9 7 B 45 IFN5432, IFN5433, IFN5434 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25°C • ANALOG LOW ON RESISTANCE SWITCHES • CHOPPERS FN5432 At 25°C free air temperature: Stade Electrical Characteristics Gate Source Breakdown Voltage
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OCR Scan
|
IFN5432,
IFN5433,
IFN5434
FN5432
FN5433
NJ903
FN5434
FN5432)
IFN6433
IFN5434)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND 8514019 SPRAGUE. GROUP T3 D • f i S 1 3 ôSQ SEMICONDS/ ICS 93D GG 0 3 b l S 03615 b ■ j METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS Switches ELECTRIC/IL CHARACTERISTICS at TA = 25°C ^6S 0ff) Limits Ig s s V(BR)6SS Max. (V) -3 0 _ -8 .0
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OCR Scan
|
2N4393
2N4856
2N4856A
2N4857
2N3824
|
PDF
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THJU401
Abstract: THJJ300B
Text: " S P R AG UE /S EM IC ON D GROUP 13 D • 6513350 0003562 b ■ 93D 03582 TTF-ZV-ZS 8 5 1 4 0 1 9 SPRAGUE . S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al Tfl = 25°C VGS ofl V(BR]GSS Limits Igss
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OCR Scan
|
THJBC264A
THJBC264B
THJBC264C
THJBC264D
THJBF244A
THJBF244B
THJBF244C
THJBF246A
THJBF246B
THJBF246C
THJU401
THJJ300B
|
PDF
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 85 14019 SPRAGUE. =13 D □SGM33Ô SEM ICO ND S/ IC S D003bl5 5 IALGR 93D 03615 j METAL-CASE JUNCTION FIELD-EFFECT TRA N SISTO R S N-Channel JFETs Switches ELECTRICAL CHARACTERISTICS at TA = 25°C loss V g S o!I) V(BR)G SS Device
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OCR Scan
|
SGM33Ã
D003bl5
2N3824
2N3966
2N3970
2N3971
2N3972
2N4091
2N4092
2N4093
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AL L E GRO MI C ROS Y S T E MS 8514019 SPRA G U E. I NC T3 D • 0 5 D4 3 3 Ö S E M IC O N D S / I C S GDD3bü3 93D 1 ■ ALGR 0 3 6 0 3 J> PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGs on V(BR)GSS
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OCR Scan
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MPF110
MPF111
MPF112
MPF820
TPBC264A
TPBC264B
TPBC264C
TPBC264D
TPJ105
TPJ107
|
PDF
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2N3820
Abstract: TP2609 MPF111 TP3331 MPF110 MPF112 MPF820 NJ32 TPBC264A TPBC264B
Text: î SPRAGUE/SEMICOND 8 5 1 4 0 1 9 SPRAGUE. GROUP ^ D • S E M I C O N D S / ICS ÖS13Ö50 0DG3LG3 93D 03603 T J> T ï'Z Ÿ - Z - S PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGSfOlf V BB]GSS Limits
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OCR Scan
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MPF110
MPF111
MPF112
MPF820
2N3820
TP2609
TP3331
NJ32
TPBC264A
TPBC264B
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: î SPRAGUE/SEMICOND 8 5 1 4 0 1 9 SP RA GU E. GROUP ^ D • S E M I C O N D S / ICS ÖS13Ö50 0DG3LG3 9 3 D 03 6 0 3 T J> T ï 'Z Ÿ - Z - S PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGSfOlf V BB]GSS
|
OCR Scan
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TPBC264B
TPBC264C
TPBC264D
TPJ105
TPJ106
-226AA/STYLES
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PDF
|
Untitled
Abstract: No abstract text available
Text: INTER F E T CORP 2bE D • MÖZbflßö OGOGlö^ Q ■ T-'q -(fO A3 N-Channel JFETs Switches ELECTRICAL CHARACTERISTICS at TA = 25°C 'os; V G Siom VfBmcss Device Type Limits Ig s s Conditions ISV«* (V Min (V) M u. (V) - 0 .1 - 0 .1 -0 3 - 0 .3 - 0 .3 -30
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OCR Scan
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2N3824
2N3966
2N3970
2N3971
2N3972
2N4091
2N4092
2N4093
2N4391
2N4392
|
PDF
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NJ132
Abstract: THJ4416A THJ4856 THJ4856A THJ4857 THJ4857A THJ4858 THJ4858A
Text: AL L E GR O M I C R O S Y S T E M S 8 5 140 19 S P R A G U E . INC T3 D • 050433Ô S E MI C OND S / I C S 93D 0 0 0 3 5 0 0 1 ■ ALGR 0 3 5 8 0 2 > T -?-Z 5 JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C
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OCR Scan
|
G5D433Ã
DD03Sa0
T-22-25
THJ4416A
THJ4856
NJ132
THJ4856A
NJ26L
THJ5432
NJ903
NJ132
THJ4857
THJ4857A
THJ4858
THJ4858A
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PDF
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Untitled
Abstract: No abstract text available
Text: B 40 9 -9 7 IF9030 N -C H A N N E L SILICO N JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN AMPLIFIER Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation
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OCR Scan
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IF9030
NJ903L
C0D07bG
|
PDF
|
NJ132
Abstract: 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391
Text: INTER F E T CORP METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Switches E L E C T R I C « 1L . C H A R A C T E R IS T IC S a t T A = - 2 5 °C Ves « . • V BHJGSS less . Limits " -i-, loss * Conditions Limits Vos (V) (nA) Min. (mA) 1.0
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OCR Scan
|
2N3824
2N3966
2N3970
NJ132
2N3971
2N3823
2N4223
2N4224
2N4416
2N4416A
2N3824
2N3966
2N3970
2N3972
2N4091
2N4092
2N4093
2N4391
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PDF
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Untitled
Abstract: No abstract text available
Text: A L LE GR O M I C R O S Y S T E M S 8 5 1 4 0 1 9 S P R A GU E. INC ^3 D • 0 S 0 M 3 3 Ô 0 0 0 3 S Ö 2 5 ■ AL 6R 93 D 0 3 5 8 2 'b'T-Z.^ZS S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C
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OCR Scan
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THJBC264A
THJBC264B
THJBC264C
THJBC264D
THJBF244A
THJBF244B
THJBF244C
THJBF246A
THJBF246B
THJBF246C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEF1IC0ND CROUP 8514019 SPRAG U E! 1H D • SS13fiS0 0003530 5 ■ S E M IC O N D S / I C S 93D 03580 3>T -2?-25 _ JUNCTION FIELD-EFFECT TRA N SISTO R C H IP S N-Channel JFETs ELECTRICAL CHARACTERISTICS atTA =
|
OCR Scan
|
SS13fiS0
THJ4416A
THJ4856
THJ4856A
THJ4857
THJ4857A
THJ4858
THJ4858A
THJ4859
THJ4859A
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PDF
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