Untitled
Abstract: No abstract text available
Text: - H233 ALUMINIUM ELECTROLYTIC CAPACITORS N SERIES STANDARD ALUMINIUM ELECTROLYTIC CAPACITORS FOR GENERAL PURPOSE 'kl nkl mkl SPECIFICATIONS Characteristics Item Rated working voltage 6.3 ~ 100 V Operating temperature range -4 0 ~ +85°C Leakage current at 20°C, 120Hz)
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120Hz)
10x12
10x16
13x22
16x24
16x31
10x21
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nkl capacitor
Abstract: No abstract text available
Text: ALUMINIUM ELECTROLYTIC CAPACITORS GENERAL INFORMATION AND PRECAUTIONS IN USING ELECTROLYTIC CAPACITORS 1. D.C. electrolytic capacitors are polarized. If the unit is connected with polarities reversed, it would lead to short circuit and further result in an explosion if the unit is kept energized. NKL
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120Hz.
nkl capacitor
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Untitled
Abstract: No abstract text available
Text: LM3017 www.ti.com SNOSC66 – MARCH 2012 LM3017 High Efficiency Low-Side Controller with True Shutdown Check for Samples: LM3017 FEATURES 1 • • • • • • • Fully compliant to Thunderbolt Technology specifications True shutdown for short circuit protection
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LM3017
SNOSC66
LM3017
10-pin
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nkl capacitor
Abstract: 12V 10A voltage regulators GRM31CR61E226KE15L 1262-25
Text: LM3017 www.ti.com SNOSC66 – MARCH 2012 LM3017 High Efficiency Low-Side Controller with True Shutdown Check for Samples: LM3017 FEATURES 1 • • • • • • • Fully compliant to Thunderbolt Technology specifications True shutdown for short circuit protection
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Original
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LM3017
SNOSC66
LM3017
10-pin
nkl capacitor
12V 10A voltage regulators
GRM31CR61E226KE15L
1262-25
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PDF
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Untitled
Abstract: No abstract text available
Text: LM3017 www.ti.com SNOSC66C – MARCH 2012 – REVISED MARCH 2013 High Efficiency Low-Side Controller with True Shutdown Check for Samples: LM3017 FEATURES KEY SPECIFICATION • • • • 1 2 • • • • • • • • • • Fully Compliant to Thunderbolt Technology
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Original
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LM3017
SNOSC66C
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PDF
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Untitled
Abstract: No abstract text available
Text: LM3017 www.ti.com SNOSC66C – MARCH 2012 – REVISED MARCH 2013 High Efficiency Low-Side Controller with True Shutdown Check for Samples: LM3017 FEATURES KEY SPECIFICATION • • • • 1 2 • • • • • • • • • • Fully Compliant to Thunderbolt Technology
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Original
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LM3017
SNOSC66C
10-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: HB526C164EN Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-628A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C164EN belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB526C164EN is a 5 12k X 64
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HB526C164EN
288-word
64-bit
ADE-203-628A
16-Mbit
HM5216165TT)
24C02)
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PDF
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1262-25
Abstract: No abstract text available
Text: LM3017 www.ti.com SNOSC66 – MARCH 2012 LM3017 High Efficiency Low-Side Controller with True Shutdown Check for Samples: LM3017 FEATURES 1 • • • • • • • Fully compliant to Thunderbolt Technology specifications True shutdown for short circuit protection
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Original
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LM3017
SNOSC66
LM3017
10-pin
1262-25
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PDF
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Untitled
Abstract: No abstract text available
Text: HB526A164DB Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-606 Z Preliminary - Rev. 0.0 Jun. 18, 1996 Description The HB526A164DB is a 512k X 64 X 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit SDRAM (HM5216165TT) sealed in TSOP
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HB526A164DB
288-word
64-bit
ADE-203-606
16-Mbit
HM5216165TT)
24C02)
144-pin
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HBS26C264EN/HBS26C464EN
Abstract: No abstract text available
Text: HB526C264EN Series, HB526C464EN Series 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-629 Z Preliminary Rev. 0.0 Aug. 20, 1996 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and
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HB526C264EN
HB526C464EN
576-word
64-bit
ADE-203-629
HB526C264EN,
HBS26C264EN/HBS26C464EN
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Untitled
Abstract: No abstract text available
Text: HB526R464DBK-10/12 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-674 Z Rev. 0.0 Oct. 17, 1996 Description The HB526R464DBK is a 1Mbyte X 64 X 4 bank synchronous dynamic RAM small outline dual in-line memory module (SODIMM), mounted as eight pieces of 16-Mbit SDRAM (HM5216805TB) sealed in a
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HB526R464DBK-10/12
576-word
64-bit
ADE-203-674
HB526R464DBK
16-Mbit
HM5216805TB)
24C02)
144-pin
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nkl capacitor
Abstract: No abstract text available
Text: @SPT SIGNAL PROCESSING TECHNOLOGIES SPTS1 4 0 8-BIT, ULTRAHIGH SPEED D/A CONVERTER FEATURES APPLICATIONS • 400 MWPS Nominal Conversion Rate • RS-343-A Compatible • Complete Video Controls: Sync, Blank, Bright and Reference White Force High • 10 KH, 100K ECL Compatible
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RS-343-A
nkl capacitor
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T211T
Abstract: nkl capacitor
Text: -'MYUH DAI -• HY57V651620A 4 Banks x 1M x 16 B it Synchronous DRAM DESCRIPTION The Hyundai HY57V651620A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth, HY57V651620A is organized as 4banks ot
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HY57V651620A
HY57V651620A
864-bit
576x16.
T10iT11
12T13
T17T18T19
T22fTZ.
T211T
nkl capacitor
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Untitled
Abstract: No abstract text available
Text: H B 5 2 6 R 4 6 4 D B K - 1 0 /1 2 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-674 Z Rev. 0.0 Oct. 17, 1996 Description The HB526R464DBK is a 1Mbyte x 64 x 4 bank synchronous dynamic RAM small outline dual in-line memory module (SODIMM), mounted as eight pieces of 16-Mbit SDRAM (HM5216805TB) sealed in a
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576-word
64-bit
ADE-203-674
HB526R464DBK
16-Mbit
HM5216805TB)
24C02)
144-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: HB526A464EN-10/12 1,048,576-word x 64-bit x 4 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-536B (Z) Rev. 2.0 Apr. 29, 1996 Description The HB526A464EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB526A464EN-10/12
576-word
64-bit
168-pin
ADE-203-536B
HB526A464EN
16Mbit
HM5216805TT)
24C02)
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PDF
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Untitled
Abstract: No abstract text available
Text: HB526A264EN-10/12 1,048,576-word x 64-bit x 2 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-485B (Z) Rev. 2.0 Apr. 29, 1996 Description The HB526A264EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB526A264EN-10/12
576-word
64-bit
168-pin
ADE-203-485B
HB526A264EN
16Mbit
HM5216805TT)
24C02)
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PDF
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HB526A164EN
Abstract: No abstract text available
Text: H B 5 2 6 A 1 6 4 E N -1 0 /1 2 524,288-word x 64-bit x 2 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-592 (Z) Preliminary Rev. 0.0 May 16, 1996 Description The HB526A164EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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288-word
64-bit
168-pin
ADE-203-592
HB526A164EN
16Mbit
HM5216165TT)
24C02)
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PDF
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Untitled
Abstract: No abstract text available
Text: HB526A164EN-10/12 524,288-word x 64-bit x 2 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-592 (Z) Preliminary - Rev. 0.0 May 16, 1996 Description The HB526A164EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB526A164EN-10/12
288-word
64-bit
168-pin
ADE-203-592
HB526A164EN
16Mbit
HM5216165TT)
24C02)
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PDF
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Untitled
Abstract: No abstract text available
Text: HB526A464EN-10/12 1,048,576-word x 64-bit x 4 bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-536B (Z) Rev. 2.0 Apr. 29, 1996 Description The HB526A464EN belongs to 8 Byte DIMM (Dual In-line M emory M odule) family, and has been
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HB526A464EN-10/12
576-word
64-bit
168-pin
ADE-203-536B
HB526A464EN
5216805TT)
24C02)
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PDF
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e304 fet
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that
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K28742
44449SILXHX
e304 fet
JFET TRANSISTOR REPLACEMENT GUIDE j201
bfq13
e420 dual jfet
JFET TIS88
Siliconix FET Design Catalog
E112 jfet
jfet e300
BFW10 JFET
2N3686
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PDF
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Nippon capacitors
Abstract: No abstract text available
Text: HB526R864ESN-10H/10/12 4,194,304-word x 64-bit Non Parity x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-671C (Z) Rev. 3.0 Jul. 25, 1997 Description The HB526R864ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R864ESN is
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HB526R864ESN-10H/10/12
304-word
64-bit
ADE-203-671C
HB526R864ESN
16-Mbit
HM5216405)
24C02)
Nippon capacitors
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PDF
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p77k
Abstract: ZTE circuit board 1A11BS
Text: HB526R864ESN-10H/10/12 4,194,304-word x 64-bit Non Parity x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-671A (Z) Rev. 1.1 Feb. 20, 1997 Description The HB526R864ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R864ESN is
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HB526R864ESN-10H/10/12
304-word
64-bit
ADE-203-671A
HB526R864ESN
16-Mbit
HM5216405TB)
24C02)
p77k
ZTE circuit board
1A11BS
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PDF
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Untitled
Abstract: No abstract text available
Text: HB526R464DBK-10H/10/12 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-674A Z Rev. 1.0 Jun. 3, 1997 Description The HB526R464DBK is a lM x 64 x 4 banks Synchronous Dynamic RAM Small Outline Dual in-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit SDRAM (HM5216805) sealed in TCP
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HB526R464DBK-10H/10/12
576-word
64-bit
ADE-203-674A
HB526R464DBK
16-Mbit
HM5216805)
24C02)
144-pin
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PDF
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C101A-1
Abstract: Nippon capacitors
Text: HB526C264EN-10IN, HB526C464EN-10IN 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737B Z Rev. 2.0 Mar. 14, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,
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HB526C264EN-10IN,
HB526C464EN-10IN
576-word
64-bit
ADE-203-737B
HB526C264EN,
HB526C464EN
HB526C264EN
C101A-1
Nippon capacitors
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PDF
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