24N100
Abstract: 23N10 125OC
Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
24N100
23N100
24N100
23N100
OT-227
E153432
125oC
23N10
125OC
|
PDF
|
HUB1200-S
Abstract: HUB1800-S
Text: !"#$% Nât !" 123333333333333333333333333333333 !"#$% !"#$%&' *+,-./01 NIMMMt !"#$%&'()*+,!"#$%&'()*+,-./012324 !"#$%&'()*%+,-%&./012 !"#$%&'()*+,-./01-234 !"#$%&'()"*+,-+./"01' !"#$%& '()*+,-+./0123 !"#$%&'()*+,-./0!$%1E !"#$%&'()*+,-./01"234 F !"#$%&'()*+"#!,-./0*1
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 6 4-.+, <38/B 1;:><;8 0;A ]tp./,t- jwt q~2 rp} t}{p,vt .wt ~/.*/. s,x0t pqx{x.3 ~u t{tr.,xrp{ r~}.,~{{t, x} ~,st, .~ s,x0t tprw x|*{t|t}.p.x~} r~|*~}t}.X}s .wt q~2 1x{{ ,tp{x4t .wt r~}}tr.x~} p}s x-~{p.x~} ~u r~}.,~{ {~vx-.xrK ctp}1wx{tI x. 1x{{ p{-~ r~}.,~{ .wt ,t{p.x0t p}}t2 ~u .wt
|
Original
|
Q27QKR
|
PDF
|
73N30
Abstract: ixfk73n30
Text: HiPerFETTM Power MOSFETs V app IXFK 73 N 30 IXFN 73 N 30 kJ`Ü~ååÉä= båÜ~åÅÉãÉåí= jçÇÉ ^î~ä~åÅÜÉ=o~íÉÇI=eáÖÜ=ÇîLÇíI=içï=íêê IaOR RapEçåF 45 mΩ Ω Ω 45 mΩ 300 V 73 A 300 V 73 A têê ≤ 200 ns TO-264 AA IXFK
|
Original
|
O-264
73N30
ixfk73n30
|
PDF
|
50N60B
Abstract: nkmm
Text: HiPerFASTTM IGBT IXGJ 50N60B V`bp I`OR V`bEë~íFíóé tÑáEíóéF = 600 V = 75 A = 2.5 V = 150 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES qg Z=OR°`= íç= NRM°` SMM s VCGR qg Z=OR°`=íç=NRM°`X=odb=Z=N=jΩ SMM s VGES `çåíáåìçìë
|
Original
|
50N60B
O-268
50N60B
nkmm
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C=_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë S1 VDSS ID25 RDS on S2 QEaF = 100 V = 100 A Ω
|
Original
|
100N10S1
100N10S2
100N10S3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ^Çî~åÅÉÇ=qÉÅÜåáÅ~ä=fåÑçêã~íáçå IXFN 73N30Q HiPerFETTM Power MOSFETs Q-Class RDS on Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30
|
Original
|
73N30Q
OT-227
E153432
|
PDF
|
ecwvkqpu
Abstract: korg
Text: r LYhh]b[ r LdYW]Z]WUh]cbg Wtguuwtg v{rg ~+yv~+z +{*|{+ ; G N Tqfgn E WUW qwvrwv IL< IL; Xcvgf rtguuwtg tcpig Lkurnc{ rtguuwtg tcpig Tcz8 rtguuwtg tcpig -P]f]b[0]bhY[fUhYX hmdY. Irrnkecdng hnwkf Wqygt uwrrn{ Kwttgpv eqpuworvkqp @UWU qrgp eqnngevqt qwvrwv 5 Tcz8 ukpm ewttgpvDTcz8 ;:oI6
|
Original
|
22kkk1Uihcb
ecwvkqpu
korg
|
PDF
|
ouku
Abstract: No abstract text available
Text: ><G3/7 +@=L.3/<7, GDA?: GH7H; F;A7M <RO]^[R\ \ ormm6 >C?F?=NLC= MNL?HANB \ -}| MN;NOM CH>C=;NIL \ 1BINI CMIF;NCIH \ zOCFNjCH MHO<<?L \ :?LI =LIMM IL L;H>IG NOLHjIH \ 1LCHN?> =CL=OCN <I;L> GIOHN \ 2I+3 =IGJFC;HN ?CEIH f4y x or :;G9F?EH?DC g q NI s6|{ vks NI nqkq6|{
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ! ! "# "# ! " # $$ & " $ % " $ %&' *% +,- ( . $ *%/0 ( 1 '4 ' ' 78 '9 2 . 3 2 " " 2 8 " : ; 2 :" 8 ':3 " %&BCD 'A 8 2 " F ' ' %&BCD ' ' ' ' ' 1 . ' 4 "2 5 3 # ' ' 758 8 1 '9 2 2 2 1=> ,? 2 1 2 2 :" ; .6 * H 2! 61* I H F E J * 8 " 2! E 6 6 K ; G "; 2 ;
|
Original
|
|
PDF
|
IXFK50N50
Abstract: IXYs M ixys ixfn 55n50 125OC 50N50 IXFK55N50 IXFN50N50 IXFN55N50 55n50
Text: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on RMMs RMMs RMMs RMMs RR^ RM^ RR^ RM^ =UMãΩ NMMãΩ =UMãΩ NMMãΩ trr ORMåë ORMåë ORMåë ORMåë Preliminary data sheet Symbol Test Conditions
|
Original
|
55N50
50N50
O-264
125OC
IXFK50N50
IXYs M
ixys ixfn 55n50
125OC
50N50
IXFK55N50
IXFN50N50
IXFN55N50
55n50
|
PDF
|
100N10S2
Abstract: 100N10S1 pehf
Text: HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C=_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë S1 VDSS ID25 RDS on S2 QEaF = 100 V = 100 A Ω
|
Original
|
100N10S1
100N10S2
100N10S3
100N10S2
100N10S1
pehf
|
PDF
|
ITK 2-1
Abstract: No abstract text available
Text: ><;4 FH8A?B?7GHE; ?BG;EA;:?7G; DCJ;E E;@7K <PL\]ZP[ e ,ECD OSEP?DEJC ?=L=?EPU nzi n{w nmz orm9z|lpm9}|x ozi o{i nz h n{w uz orm9z|lpm9}| e ,ECD OAJOEPERA e qG9 @EAHA?PNE? OPNAJCPD f>APSAAJ ?KEH d ?KJP=?POg e 6EJCHA OE@A OP=>HA =J@ H=P?DEJC PULAO =R=EH=>HA
|
Original
|
9CBG79G
ITK 2-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Mechanical Package Specifications o M Cherry Semiconductor offers a wide variety of traditional packages in addition to more advanced package technology. Flip Chip is an example of the advanced packaging technologies offered by Cherry Semiconductor. An application note included in this
|
OCR Scan
|
|
PDF
|
|
|
DIODE marking code SJ
Abstract: ERC06 Diode RJ 4A PEI CF 30 FR A536
Text: E R C 6 i s a : Outline Drawings FAST RECOVERY DIODE Features •*^-T : Marking Most suitable for color T .V . damper. J> 7 — 3 — K : flf C o lo r code : Blue High voltage by mesa design. . <T3> High reliability Abridged type name $ 7 J* V o lta g e cla ss
|
OCR Scan
|
ERC06
DIODE marking code SJ
Diode RJ 4A
PEI CF 30 FR
A536
|
PDF
|
L6261
Abstract: l626 1 MEGA OHM PRESET Combo (Spindle VCM) Driver L6260 TQFP64 Combo Spindle VCM Driver voice enabled speed control of DC motor Intel 80196 100-10 f
Text: « S G S -T H O M S O N V # . M M llL [Ig T [a M D (g § L 6 2 6 0 4.5 - 5.5V DISK DRIVER SPINDLE & VCM , PO W ER & CO N TR O L C O M B O ’S PRODUCT PREVIEW GENERAL • 5V AND 3V OPERATION. ‘ REGISTER BASED ARCHITECTURE . MINIMUM EXTERNAL COMPONENTS
|
OCR Scan
|
L6260
300mA
TQFP64
L6261
l626
1 MEGA OHM PRESET
Combo (Spindle VCM) Driver
L6260
Combo Spindle VCM Driver
voice enabled speed control of DC motor
Intel 80196
100-10 f
|
PDF
|
Untitled
Abstract: No abstract text available
Text: OHAW1N0 NABE IM ININO «M U MMMCTION THIS DRAWING IS UNPUBLISHED. eo^rwiBMT i t RELEASED FOR PUBLICATION a r A M P INCONPORATtD. oitr LOC ,1 9 REVISIONS 14 ALL INTBNMTIONAL RIONTS AC9ERVCD. LTft MTC iip t io n REV / 0720-0323-93 1 1 .1 0 MAX C. 4 3 7 3 WASHER R.
|
OCR Scan
|
\comb\52263-l
29-May-2000
RING-044
|
PDF
|
Untitled
Abstract: No abstract text available
Text: r=7 SGS-THOMSON A T /. W » ilL llg T O IÌ!g n g i_T D A 2 8 2 2 D DUAL LOW-VOLTAGE POWER AMPLIFIER . • ■ ■ SUPPLY VOLTAGE DOWN TO 1.8V LOWCROSSOVER DISTORTION LOWQUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION DESCRIPTION The TDA2822D is a monolithic integrated circuit
|
OCR Scan
|
TDA2822D
TDA2822D
|
PDF
|
