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    NLAS5223BMUR2G Price and Stock

    Flip Electronics NLAS5223BMUR2G

    IC SWITCH SPDTX2 350MOHM 10UQFN
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    DigiKey NLAS5223BMUR2G Reel 2,500
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    onsemi NLAS5223BMUR2G

    IC SWITCH SPDTX2 350MOHM 10UQFN
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    Avnet Americas NLAS5223BMUR2G Reel 0 Weeks, 2 Days 3,572
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    Rochester Electronics NLAS5223BMUR2G 605 1
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    Flip Electronics NLAS5223BMUR2G 24,000
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    NLAS5223BMUR2G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NLAS5223BMUR2G On Semiconductor NLAS5223 - IC DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC10, 1.40 X 1.80 MM, 0.55 MM HEIGHT, 0.40 MM PITCH, LEAD FREE, UQFN-10, Multiplexer or Switch Original PDF
    NLAS5223BMUR2G On Semiconductor Ultra-Low 0.5 ohm Dual SPDT Analog Switch Original PDF

    NLAS5223BMUR2G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UQFN-10

    Abstract: No abstract text available
    Text: NLAS5223B, NLAS5223BL Ultra-Low 0.35 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.35 W, at VCC = 4.3 V.


    Original
    PDF NLAS5223B, NLAS5223BL NLAS5223B WQFN10 488AQ UQFN10 488AT NLAS5228B/D UQFN-10

    UQFN-10

    Abstract: UQFN-10 A3 UQFN-10 1.4 x 1.8 mm
    Text: NLAS5223B, NLAS5223BL Ultra−Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 V.


    Original
    PDF NLAS5223B, NLAS5223BL NLAS5223B WQFN-10 488AQ UQFN-10 488AT NLAS5223B/D UQFN-10 A3 UQFN-10 1.4 x 1.8 mm

    UQFN-10

    Abstract: NLAS5223B NLAS5223BL NLAS5223BLMNR2G NLAS5223BMNR2G NLAS5223BMUR2G UQFN10 WQFN10
    Text: NLAS5223B, NLAS5223BL Ultra-Low 0.35 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub-micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra-Low RON of 0.35 W, at VCC = 4.3 V.


    Original
    PDF NLAS5223B, NLAS5223BL NLAS5223B NLAS5223BL NLAS5223B/D UQFN-10 NLAS5223BLMNR2G NLAS5223BMNR2G NLAS5223BMUR2G UQFN10 WQFN10

    NLAS5223B

    Abstract: NLAS5223BL NLAS5223BLMNR2G NLAS5223BMNR2G NLAS5223BMUR2G WQFN10 UQFN-10 UQFN-10 A3 UQFN-10 1.4 x 1.8 mm UQFN10
    Text: NLAS5223B, NLAS5223BL Ultra−Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 V.


    Original
    PDF NLAS5223B, NLAS5223BL NLAS5223B WQFN-10 488AQ NLAS5223BMNR2G NLAS5223BLMNR2G NLAS5223BMUR2G NLAS5223B/D NLAS5223BL NLAS5223BLMNR2G NLAS5223BMNR2G NLAS5223BMUR2G WQFN10 UQFN-10 UQFN-10 A3 UQFN-10 1.4 x 1.8 mm UQFN10

    488AT-01

    Abstract: UQFN-10
    Text: NLAS5223B, NLAS5223BL Ultra-Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub-micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra-Low RON of 0.5 W, at VCC = 3.0 V.


    Original
    PDF NLAS5223B, NLAS5223BL NLAS5223B WQFN10 488AQ UQFN10 488AT NLAS5223B/D 488AT-01 UQFN-10

    Untitled

    Abstract: No abstract text available
    Text: NLAS5223B, NLAS5223BL Ultra-Low 0.35 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.35 W, at VCC = 4.3 V.


    Original
    PDF NLAS5223B, NLAS5223BL NLAS5223B WQFN10 488AQ NLAS5223BMNR2G NLAS5223BLMNR2G NLAS5223BMUR2G NLAS5228B/D

    UQFN-10

    Abstract: No abstract text available
    Text: NLAS5223B, NLAS5223BL Ultra-Low 0.35 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.35 W, at VCC = 4.3 V.


    Original
    PDF NLAS5223B, NLAS5223BL NLAS5223B WQFN10 488AQ UQFN10 488AT NLAS5223B/D UQFN-10

    UQFN10

    Abstract: UQFN-10 WQFN-10 UQFN-10 1.4 x 1.8 mm
    Text: Enabling Energy Efficient Solutions Product Overview Created on: 10/26/2011 NLAS5223B: 0.5 Ohm Dual SPDT Analog Switch For complete documentation, see the data sheet Product Description The NLAS5223B is an advanced CMOS analog switch fabricated in Sub micron silicon gate CMOS technology. The device is a


    Original
    PDF NLAS5223B: NLAS5223B NLAS5223BL NLAS5223BLMNR2G NLAS5223BMNR2G NLAS5223BMUR2G UQFN-10 WQFN-10 WQFN-10 UQFN10 UQFN-10 1.4 x 1.8 mm