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    NOISE Search Results

    NOISE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLC425A/BPA Rochester Electronics LLC CLC425 - Op Amp, Wideband, Low-Noise - Dual marked (5962-9325901MPA) Visit Rochester Electronics LLC Buy
    CLC428A/BPA Rochester Electronics LLC CLC428 - OP AMP, DUAL, LOW NOISE, WIDEBAND, VOLT FDBK - Dual marked (5962-9470801MPA) Visit Rochester Electronics LLC Buy
    UPC4558G2-E1-A Renesas Electronics Corporation Low Noise Dual Operational Amplifier Visit Renesas Electronics Corporation
    UPC4558G2-E2-A Renesas Electronics Corporation Low Noise Dual Operational Amplifier Visit Renesas Electronics Corporation
    601G-01LFT Renesas Electronics Corporation Low Phase Noise Clock Multiplier Visit Renesas Electronics Corporation
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    NOISE Price and Stock

    AMD EF-DI-IMG-NOISE-SITE

    SITE LICENSE IMAGE NOISE REDUCT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EF-DI-IMG-NOISE-SITE No Container 1
    • 1 $920
    • 10 $920
    • 100 $920
    • 1000 $920
    • 10000 $920
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    AMD EFR-DI-IMG-NOISE-SITE

    IMAGE NOISE REDUCTION IP CORE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EFR-DI-IMG-NOISE-SITE No Container 2
    • 1 -
    • 10 $184
    • 100 $184
    • 1000 $184
    • 10000 $184
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    Samsung Electro-Mechanics KIT_MLCC_ACOUSTIC-NOISE

    CAP KIT CERAMIC 2.2UF-47UF 750PC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KIT_MLCC_ACOUSTIC-NOISE Bulk
    • 1 -
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    • 10000 -
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    AMD EFR-DI-IMG-MA-NOISE-SITE

    MOTION ADAPTIVE NOISE REDUCTION
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EFR-DI-IMG-MA-NOISE-SITE No Container 1
    • 1 $368
    • 10 $368
    • 100 $368
    • 1000 $368
    • 10000 $368
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    Samsung Electro-Mechanics KIT_MLCC_ACOUSTIC NOISE

    ENHANCED ACOUNSTIC NOISE SAMPLE KIT PRODUCT - Boxed Product (Development Kits) (Alt: KIT_MLCC_ACOUSTIC)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas KIT_MLCC_ACOUSTIC NOISE Box 1 1
    • 1 $33.36
    • 10 $33.36
    • 100 $33.36
    • 1000 $33.36
    • 10000 $33.36
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    NOISE Datasheets (70)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NC101 Noisecom 0.1 HZ - 100 KHZ Noise Diode Original PDF
    NC102 Noisecom 0.1 HZ - 500 KHZ Noise Diode Original PDF
    NC103 Noisecom 0.1 HZ - 1 MHZ Noise Diode Original PDF
    NC104 Noisecom 0.1 HZ - 3 MHZ Noise Diode Original PDF
    NC1111A Noisecom Amplified Noise Module Original PDF
    NC1111B Noisecom Amplified Noise Module Original PDF
    NC1112B Noisecom Amplified Noise Module Original PDF
    NC1124A Noisecom Amplified Noise Module Original PDF
    NC1126A Noisecom Amplified Noise Module Original PDF
    NC1128A Noisecom Amplified Noise Module Original PDF
    NC201 Noisecom 0.1 HZ - 10 MHZ Noise Diode Original PDF
    NC202 Noisecom 0.1 HZ - 25 MHZ Noise Diode Original PDF
    NC203 Noisecom 0.1 HZ - 100 MHZ Noise Diode Original PDF
    NC2101 Noisecom DUAL-IN-LINE AMPLIFIED NOISE MODULES Original PDF
    NC2102 Noisecom DUAL-IN-LINE AMPLIFIED NOISE MODULES Original PDF
    NC2105 Noisecom DUAL-IN-LINE AMPLIFIED NOISE MODULES Original PDF
    NC2201 Noisecom DUAL-IN-LINE AMPLIFIED NOISE MODULES Original PDF
    NC2401 Noisecom DUAL-IN-LINE AMPLIFIED NOISE MODULES Original PDF
    NC2501 Noisecom DUAL-IN-LINE AMPLIFIED NOISE MODULES Original PDF
    NC2601 Noisecom DUAL-IN-LINE AMPLIFIED NOISE MODULES Original PDF

    NOISE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TLE2037, TLE2037A EXCALIBUR LOW -NOISE HIGH-SPEED PRECISION DECOM PENSATED OPERATIONAL AM PLIFIERS D3454, MAY 1990 - REVISED APRIL 1991 available features Outstanding Combination of DC Precision and AC Performance: Gain-Bandwldth Product. . . 80 MHz Typ V


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    PDF TLE2037, TLE2037A D3454,

    Untitled

    Abstract: No abstract text available
    Text: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4000F VHF-UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Band W id th 700MHz M in. @ 3 dB dow n • Low Noise 4dB (Typ.) @ f = 400MHz • Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF TA4000F 700MHz 400MHz 400MHz) 1000pF IS22I

    Untitled

    Abstract: No abstract text available
    Text: 54AC11002, 74AC11002 QUADRUPLE 2-INPUT POSITIVE-NOR GATES D2957, JUNE 1987 - REVISED APRIL 1993 54AC11002 . . . J PACKAGE 74AC11002 . . . D OR N PACKAGE TOP VIEW Flow-Through Architecture Optimizes PCB Layout Center-Pin Vcc and GND Configuration Minimizes High-Speed Switching Noise


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    PDF 54AC11002, 74AC11002 D2957, 500-mA 300-mil 54AC11002

    str f 6454

    Abstract: str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453 2N6454
    Text: TYPES 2N64B1 THRU 2N6454 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L S 7 3 1 2 0 0 8 . JU N E 1973 DESIGNED FOR LOW-NOISE PREAMPLIFIER APPLICATIONS ESPECIALLY HYDROPHONES, IR SENSORS, AND PARTICLE DETECTORS • Low V„ . . . 5 nV/A/Hz Max at 10 Hz 2N6451, 2N6453


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    PDF 2N64B1 2N6454 2N6451, 2N6453) 2N6453, 2N6454) str f 6454 str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453

    2N3051

    Abstract: 2N3050 2N2412 2n3049
    Text: TYPES 2N3049, 2N3050, 2N3051 DUAL P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 3 0 , A U G U S T 1 9 6 3 - R E V I S E D A P H IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS, LOW-NOISE AMPLIFIERS, AND LOW-LEVEL SWITCHING • Each Triode Electrically Similar to 2N2411 and 2N2412 Transistors


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    PDF 2N3049, 2N3050, 2N3051 2N2411 2N2412 2N3050 2n3049

    Untitled

    Abstract: No abstract text available
    Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)


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    PDF HN3C17FU 16GHz

    2SC31

    Abstract: m15t
    Text: 2SC31 22 SILICQN NPN EPITAXIAL PLANAR TYPE t r a n s is t o r T V V H F RF A M P LIF IE R A PP LIC A T IO N S . FEATURES : • High Gain : Gpe = 24dB Typ. (f=200M Hz) • Low Noise : NF = 2.0dB (Typ.) (f=200MHz) • Excellent Forward AGC Characteristics.


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    PDF 2SC31 200MHz) 2SC3122 50MHz m15t

    Untitled

    Abstract: No abstract text available
    Text: SN54HC132, SN74HC132 QUADRUPLE POSITIVE-NAND GATES WITH SCHMITT-TRIGGER INPUTS SCLS034B - DECEMBER 1982 - REVISED JANUARY 1996 • • • • • Operation From Very Slow Input Transitions Temperature-Compensated Threshold Levels High Noise Immunity Same Pinouts as ’HCOO


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    PDF SN54HC132, SN74HC132 SCLS034B 300-mll SN54HC132 SN74HC132

    Untitled

    Abstract: No abstract text available
    Text: 54ACT11002,74ACT11002 QUADRUPLE 2-INPUT POSITIVE-NOR GATES SCAS003A - D2957, JUNE 1987 - REVISED APRIL 1993 Inputs Are TTL-Voltage Compatible Flow-Through Architecture to Optimize PCB Layout Center-PIn V^c and GND Configurations Minimize High-Speed Switching Noise


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    PDF 54ACT11002 74ACT11002 SCAS003A D2957, 500-mA 300-mll

    l20pF

    Abstract: No abstract text available
    Text: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.


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    PDF 3SK249 l20pF

    TGF1350

    Abstract: No abstract text available
    Text: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation


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    PDF TGF1350 TGF1350

    S1912

    Abstract: las19u
    Text: INTEGRATED CIRCU ITS U N IT R O D E 5 AMP POSITIVE VOLTAGE REGULATORS LAS 1900 SERIES FEATURES DESCRIPTION • Guaranteed Power Dissipation 50 Watts fa 80°C Case • Guaranteed input-output differential: - 2.6 Volts • Low noise, band gap reference • Remote sense capability


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    PDF O-247 S1912 las19u

    UC2856

    Abstract: No abstract text available
    Text: UC1856 UC2856 UC3856 y UNITRODE Improved Current Mode PWM Controller FEATURES Pin-for-Pin Compatible With the UC3846 DESCRIPTION Improved Current Sense Amplifier With Reduced Noise Sensitivity The UC3856 is a high performance version of the popular UC3846


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    PDF UC3846 UC1856 UC2856 UC3856 UC3856 UDG-96184

    12-10D1A

    Abstract: TOSHIBA RECTIFIER
    Text: U U T V J £ * t 0 0 SCHOTTKY BARRIER TYPE RECTIFIER STACK U5GWJ2C48C SWITCHING TYPE POWER SUPPLY APPLICATON. CONVERTER & CHOPPER APPLICATION. • • • Repetitive Peak Reverse Voltage : V r r m = 40V Average Output Rectified Current : I = 5A Low Switching Losses and Output Noise.


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    PDF U5GWJ2C48C 5GWJ2C48C 12-10D1A 12-10D2A 5GWJ2C48C, U5GWJ2C48C 12-10D1A TOSHIBA RECTIFIER

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC4394 Transistor Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • L o w N oise Figure, H igh Gain • N F = 1.1 d B , IS21el2 = 11 dB f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )


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    PDF 2SC4394 IS21el2

    d2439

    Abstract: p725
    Text: MC3423 OVERVOLTAGE-SENSING CIRCUIT D2439, A P R IL 1978— RE V IS E D M A R C H 1988 * D OR P PACKAGE Separate Outputs for Crowbar and Logic Circuitry TOP VIEW Programmable Time Delay to Eliminate Noise Triggering TTL-Level Activation Isolated From Voltage-Sensing Inputs


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    PDF MC3423 D2439, d2439 p725

    2SK161

    Abstract: 2SK161GR vI652
    Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK161 U nit in mm FM TU N ER A P P LIC A T IO N S . VH F B A N D A M P LIF IE R A PP LIC A T IO N S . Low Noise Figure • • : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


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    PDF 2SK161 100MHz) 2SK161 2SK161-0 2SK161-Y 2SK161-GR 2SK161GR vI652

    2N3806

    Abstract: 2N3807 NS2N 2N3808 2n 3808 2N3809 2n3811
    Text: TYPES 2N3806 THRU 2N3811 DUAL P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 72 11686. M A R C H 1972 TW O T R A N S IS T O R S IN O N E P A C K A G E R E C O M M E N D E D FOR • Differential Amplifiers • High-Gain, Low-Noise Amplifiers • Low-Level Flip-Flops


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    PDF 2N3806 2N3811 2N2913 2N2920 2N2639 2N2644 2N3807 2N3808 2N3809 NS2N 2n 3808

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC74AC164 8-bit Shift Register S-IN, P-OUT Features: • High Speed: fmax = 170MHz (typ.) at Vco = 5V • Low Power Dissipation: • High Noise Immunity: VN,H=VNIL=28% Voc (min.) • Symmetrical Output Impedance: llOHl = I o l = 24mA (min.). Capability of driving 50ft transmission lines.


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    PDF TC74AC164 170MHz

    2sc5464

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 ie l 2 = 12dB f= lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SC5464 2sc5464

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz


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    PDF 2SC4322 IS21ei2

    TRW mmic

    Abstract: No abstract text available
    Text: TLH124C HEMT Image Rejection Downconverter GaAs Telecom Products Features RF frequency: 37 to 40 GHz Noise figure: 4.0 dB Conversion gain: 7.0 dB Self bias: 5V/95 mA Built-in LO drive amplifier Description and Applications The TLH124C is a monolithic HEMT low-noise image rejection downconverter designed for


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    PDF TLH124C TLH124C 90-degree 50-ohm 9701455-S-J1 TRW mmic

    TIS152

    Abstract: No abstract text available
    Text: TLS1521 THIN-FILM 6-CHANNEL READ/WRITE PREAMPLIFIER D3625, DECEM BER 1 990-R E V IS E D MARCH 1991 • Differential Input Capacitance . . . 35 pF Typ • Low Input Noise Voltage . . . 0.5 nV/VRz Typ FN PACKAGE TOP VIEW 9 z • o o <••> > y o 2 1 x


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    PDF TLS1521 D3625, 990-R 40/Ivv) TIS152

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2C11FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 1 FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.1 + 0.1 • Including Two Devices in U S6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF HN2C11FU