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    NOR FLASH ECC Search Results

    NOR FLASH ECC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    54F02/BCA Rochester Electronics LLC NOR GATE; QUAD 2-INPUT Visit Rochester Electronics LLC Buy
    911HM Rochester Electronics LLC OR/NOR Visit Rochester Electronics LLC Buy
    54AC02/QCA Rochester Electronics LLC 54AC02 - Quad 2-Input NOR Gate Visit Rochester Electronics LLC Buy
    SN74HC4078AD Rochester Electronics LLC 74HC4078 - 8 Input NOR/OR Gate Visit Rochester Electronics LLC Buy

    NOR FLASH ECC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    LCMXO2-1200HC-4TG144C

    Abstract: flash controller verilog code NOR Flash ecc NAND FLASH Controller verilog code for Flash controller samsung nand flash vhdl code ram row column RD1055 flash read verilog RNB CE
    Text: NAND Flash Controller November 2010 Reference Design RD1055 Introduction Flash memory, whether it is in NOR or NAND in structure, is a non-volatile memory that is used to replace traditional EEPROM and hard disks for its low cost and versatility. Because of the difference in the structure of interconnection of the memory cells, NOR Flash is known for its random access capability, while the NAND Flash is known


    Original     		PDF RD1055 LFXP2-5E-7M132C, 1-800-LATTICE LCMXO2-1200HC-4TG144C flash controller verilog code NOR Flash ecc NAND FLASH Controller verilog code for Flash controller samsung nand flash vhdl code ram row column RD1055 flash read verilog RNB CE

    samsung 8Gb nand flash

    Abstract: oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr
    Text: Samsung OneNAND Flash Fusion Memory Featuring High-Density NAND Flash with a NOR Interface Samsung OneNAND™ Flash What is OneNAND? OneNAND for Handsets Samsung’s OneNAND meets the memory-hungry needs of next-generation devices by providing a single-chip flash


    Original     		PDF 108MB/s 256Mb BR-06-NAND-001 samsung 8Gb nand flash oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr

    reset nand flash HYNIX

    Abstract: hynix mcp hynix nand PROGRAMMING hynix NAND ECC hynix nand spare area hynix nand Hynix E NAND hynix nand 2G nand flash HYNIX 1gb toshiba mcp nand
    Text: S30MS01GP and 1Gbit NAND Comparison Application Note by Chris Brewster 1. Introduction Spansion ORNAND devices are designed to have either an NOR or NAND interface. ORNAND serves as a complement to XIP NOR flash memory if NOR interface is chosen; it serves as replacement for raw NAND for


    Original     		PDF S30MS01GP reset nand flash HYNIX hynix mcp hynix nand PROGRAMMING hynix NAND ECC hynix nand spare area hynix nand Hynix E NAND hynix nand 2G nand flash HYNIX 1gb toshiba mcp nand

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    S72WS512PFFJF9GH

    Abstract: BGA 15X15 BGA 130 MCP NAND DDR 12X12 POP PACKAGE TRAY 15x15 bta 137 S72WS512PFFKFKGH N-ADQ14 NAND01
    Text: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information


    Original     		PDF S72WS-P S72WS512PFFJF9GH BGA 15X15 BGA 130 MCP NAND DDR 12X12 POP PACKAGE TRAY 15x15 bta 137 S72WS512PFFKFKGH N-ADQ14 NAND01

    BGA 130 MCP NAND DDR

    Abstract: JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball
    Text: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information


    Original     		PDF S72WS-P BGA 130 MCP NAND DDR JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball

    PC8378E

    Abstract: PC8379E PC8379 e2v GTX 120 mpc837
    Text: PC8378E PowerQUICC II Pro Processor Hardware Specifications Datasheet Features • Memory – 512 MB DDR2 up to 400 MHz Data Rate • Local Bus Flash Memory – – – – • PCI – – • • • • • • • 32 MB NOR Flash 32 MB NAND Flash 4 Mb SPI Flash


    Original     		PDF PC8378E 32-bit RS232 RS232 PC8378E PC8379E PC8379 e2v GTX 120 mpc837

    Untitled

    Abstract: No abstract text available
    Text: PC8379 PowerQUICC II Pro Processor Hardware Specifications Datasheet Features • Memory – 512 MB DDR2 up to 400 MHz Data Rate • Local Bus Flash Memory – – – – • PCI – – • • • • • • • 32 MB NOR Flash 32 MB NAND Flash 4 Mb SPI Flash


    Original     		PDF PC8379 32-bit

    s5l840fx

    Abstract: S5L840F calmRISC16 P9336 and pin diagram of MMC 4017 CalmRISC-16 player audio to flash memoy s5l8 samsung i2s S5H5002
    Text: CPAD-WALTZ S5L840F Internet Audio Decoder for Flash Memory Media Data Sheet INTRODUCTION S5L840F is a single chip digital audio player IC supporting various compressed audio format on Flash Memory Media. S5L840F provides 2Mbits of embedded NOR flash memory and 76Kbytes of SRAM requiring no external


    Original     		PDF S5L840F) S5L840F 76Kbytes 16bit CALMRISC16TM) 24bit MAC2424 CalmRISC16) s5l840fx calmRISC16 P9336 and pin diagram of MMC 4017 CalmRISC-16 player audio to flash memoy s5l8 samsung i2s S5H5002

    SLC nand hamming code 512 bytes

    Abstract: hamming code 512 bytes hamming code flash hamming ecc eMMC hamming encoder decoder 7 bit hamming code BOSE emmc controller datasheet NAND Flash MLC emmC
    Text: What Types of ECC Should Be Used on Flash Memory? Application Note by Scott Chen 1. Abstract NOR Flash normally does not need ECC Error-Correcting Code . On the other hand, NAND requires ECC to ensure data integrity. NAND Flash includes extra storage on each page to store ECC code as well as other


    Original     		PDF

    KBB0XA300M

    Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
    Text: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary


    Original     		PDF KBB0xA300M 8Mx8/4Mx16) 8Mx16) 2Mx16) 80-Ball 80x12 transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402

    Untitled

    Abstract: No abstract text available
    Text: 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory P33-65nm JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,


    Original     		PDF 512Mb, P33-65nm P33-65nm) JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA,

    Untitled

    Abstract: No abstract text available
    Text: 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory P33-65nm JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,


    Original     		PDF 512Mb, P33-65nm P33-65nm) JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA,

    SAMSUNG MCP

    Abstract: KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100
    Text: KBB0xA500M - T402 MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 15, 2002


    Original     		PDF KBB0xA500M 8Mx8/4Mx16) 8Mx16) 4Mx16) 150uA 100uA 200uA 80-Ball 80x12 SAMSUNG MCP KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100

    SAMSUNG MCP

    Abstract: samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60
    Text: SEC Only MCP MEMORY KAB0xD100M - TxGP Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 20, 2002


    Original     		PDF KAB0xD100M 8Mx8/4Mx16) 8Mx16) 2Mx16) 39page) 43page) 80-Ball SAMSUNG MCP samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60

    MPC83xx

    Abstract: elbc fcm mpc8313 reference uboot freescale mpc8313 MPC8313E bad block MPC83xx, linux MICRON NAND u-boot K9F5608U0D MPC8313ERDB
    Text: Freescale Semiconductor Application Note Document Number: AN3201 Rev. 0, 06/2007 Using U-boot to Boot From a NAND Flash Memory Device for MPC8313E by Nick Spence Network Computing Systems Group, Freescale Semiconductor, Inc. NOR-based Flash memory devices have traditionally been


    Original     		PDF AN3201 MPC8313E MPC83xx elbc fcm mpc8313 reference uboot freescale mpc8313 MPC8313E bad block MPC83xx, linux MICRON NAND u-boot K9F5608U0D MPC8313ERDB

    S29GL256S

    Abstract: S29GL128S S29GL01gs S29GL-S S29GL "NOR Flash" "NOR Flash" 512 KB S29GL512S spansion flash mirrorbit i2c GPS Builder
    Text: Interfacing i.MX3x to S29GL MirrorBit NOR Flash Application Note 1. Abstract The Freescale i.MX3x Multimedia Applications processors and Spansion® Mirror Bit® Flash Technology are utilized extensively in today's embedded applications. The product families covered by this application note


    Original     		PDF S29GL S29GL256S S29GL128S S29GL01gs S29GL-S "NOR Flash" "NOR Flash" 512 KB S29GL512S spansion flash mirrorbit i2c GPS Builder

    Micron 512MB NOR FLASH

    Abstract: Micron 256MB NOR FLASH Micron 512MB nand FLASH DIMM 100-pin MT18LSDT3272G-13E
    Text: Micron Technology - SDRAM Modules Part List Modules  About | Products | Investors | Sales | Jobs | News | Search | Support      DRAM | Modules | NOR Flash | NAND Flash | PSRAM | CMOS Image Sensors    Home > Products > Modules > SDRAM


    Original     		PDF MT18LSDT3272G-13E 256MB 168-pin MT18LSDT3272G-13E 256MB, 512MB, Micron 512MB NOR FLASH Micron 256MB NOR FLASH Micron 512MB nand FLASH DIMM 100-pin

    js28f256p

    Abstract: RC48F4400P0TB0EJ
    Text: 256Mb and 512Mb 256Mb/256Mb , P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm) RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF, PC28F256P33TFE, PC28F256P33BFE, PC28F256P33BFF, PC28F256P33BFR, RC48F4400P0TB0EJ, PC48F4400P0TB0EE, PC48F4400P0TB0EH, JS28F256P33TFE, JS28F256P33BFE


    Original     		PDF 256Mb 512Mb 256Mb/256Mb) P33-65nm P33-65nm) RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF, PC28F256P33TFE, PC28F256P33BFE, js28f256p RC48F4400P0TB0EJ

    PC48F4400P0VB0EE

    Abstract: No abstract text available
    Text: 256Mb and 512Mb 256Mb/256Mb , P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • Security – One-time programmable register: 64 OTP bits,


    Original     		PDF 256Mb 512Mb 256Mb/256Mb) P30-65nm P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0EE

    Untitled

    Abstract: No abstract text available
    Text: 256Mb and 512Mb 256Mb/256Mb , P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • Security – One-time programmable register: 64 OTP bits,


    Original     		PDF 256Mb 512Mb 256Mb/256Mb) P30-65nm P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex,

    RC48F4400P0VB0E

    Abstract: PC28F256P30BFF MICRON mcp pf48f4400p0vbqe rc28F256P30TFE
    Text: 256Mb and 512Mb 256Mb/256Mb , P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • Security – One-Time Programmable Register: 64 OTP bits,


    Original     		PDF 256Mb 512Mb 256Mb/256Mb) P30-65nm P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, RC48F4400P0VB0E PC28F256P30BFF MICRON mcp pf48f4400p0vbqe rc28F256P30TFE

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		PDF 120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand