SDC30S120
Abstract: SEMISOUTH SGDR2500P2 SJEC120R100 SEMISOUTH SDC30S120 APTJC120AM13VCT1AG Semisouth SJEC120R100 JFET semisouth sic jfet diode t25 4 c3
Text: APTJC120AM13VCT1AG VDSX = 1200V RDSon = 13 mΩ max @ Tj = 25 °C ID = 100 A @ Tc = 50 °C Phase leg SiC Power Module Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features • • SiC JFETX, Normally off 8 * SJEC120R100 in parallel per switch
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APTJC120AM13VCT1AG
SJEC120R100
SDC30S120
SGDR2500P2)
APTJC120AM13VCT1AG
SEMISOUTH
SGDR2500P2
SEMISOUTH SDC30S120
Semisouth SJEC120R100
JFET semisouth
sic jfet
diode t25 4 c3
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT BRIEF Subject to change LX1780 SiC Enhancement Mode Silicon Carbide JFET and Bipolar Transistors Driver DESCRIPTION The LX1780 is an extremely fast-switching Gate driver IC for driving normally-off silicon carbide JFET switches. It replaces
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LX1780
LX1780
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Untitled
Abstract: No abstract text available
Text: News Release FOR IMMEDIATE RELEASE Contacts: Media Contact: Karina Seifert Phone: +49 0 89 878067-115 [email protected] Product Contact: Michael Frisch Phone: +49 (0)89 878067-142 [email protected] FIRST STANDARD POWER MODULES WITH NORMALLY OFF SiC JFETs FOR HIGHPERFORMANCE SOLAR INVERTERS
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ASJE1200R100
Abstract: SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120R100 SJEP120 silicon carbide JFET
Text: ADVANCE INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
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O-258
260oC
MIL-PRF-19500
MIL-STD-750
ASJE1200R100
SJEP120R100
O-247
ASJE1200R100
O-257
SiC JFET
JFET semisouth
semisouth sjEp120R100
SEMISOUTH
SJEP120
silicon carbide JFET
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ASJE1700R550
Abstract: SiC JFET JFET semisouth 3E05 SEMISOUTH silicon carbide j-fet silicon carbide JFET SJEP170 SJEP170R550 SJEP
Text: ADVANCE INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
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ASJE1700R550
O-258
260oC
MIL-PRF-19500
MIL-STD-750
SJEP170R550
O-247
ASJE1700R550
O-257
SiC JFET
JFET semisouth
3E05
SEMISOUTH
silicon carbide j-fet
silicon carbide JFET
SJEP170
SJEP
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ASJE1200R063
Abstract: SiC JFET JFET semisouth SJEP120 SJEP120R063 SEMISOUTH silicon carbide JFET sjep120r0
Text: ADVANCE INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
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ASJE1200R063
O-258
260oC
MIL-PRF-19500
MIL-STD-750
SJEP120R063
O-247
ASJE1200R063
O-257
SiC JFET
JFET semisouth
SJEP120
SEMISOUTH
silicon carbide JFET
sjep120r0
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SJEP170R550
Abstract: semisouth JFET 3E05 SEMISOUTH JFET semisouth ASJE1700R550
Text: ADVANCED INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
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ASJE1700R550
O-257
260oC
MIL-PRF-19500
MIL-STD-750
SJEP170R550
O-247
ASJE1700R550
semisouth JFET
3E05
SEMISOUTH
JFET semisouth
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JFET semisouth
Abstract: SiC JFET SJEP120R063 SEMISOUTH sjep120r0
Text: ADVANCED INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
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ASJE1200R063
O-257
260oC
MIL-PRF-19500
MIL-STD-750
SJEP120R063
O-247
ASJE1200R063
JFET semisouth
SiC JFET
SEMISOUTH
sjep120r0
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JFET semisouth
Abstract: SEMISOUTH SiC JFET
Text: ADVANCED INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
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O-257
260oC
MIL-PRF-19500
MIL-STD-750
ASJE1200R100
SJEP120R100
O-247
ASJE1200R100
JFET semisouth
SEMISOUTH
SiC JFET
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JFET semisouth
Abstract: SJEP120R050 SGDR600P1 SEMISOUTH SJEP120 SJEP120R063 AN-SS1 ixdd509 SiC JFET JFET
Text: Demo Board Preliminary SGDR600P1 Two-Stage Opto Coupled Gate Driver Demo Board The SGDR600P1 is an optoisolated, two-stage gate driver optimized for high speed, hard switching of SemiSouth's SJEP120R050 and SJEP120R063 normally-off SiC VJFETs. The SGDR600P1 gate driver provides a peak output current of +6/- 3A
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SGDR600P1
5V/-15V
SGDR600P1
SJEP120R050
SJEP120R063
SJEP120R050
JFET semisouth
SEMISOUTH
SJEP120
AN-SS1
ixdd509
SiC JFET
JFET
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SiC-JFET
Abstract: SiC JFET Gan on silicon transistor EPC Gan transistor Gan on silicon substrate SiC jfet cascode silicon carbide JFET normally on SiC BJT 600V GaN DMOS SiC
Text: Gallium Nitride GaN versus Silicon Carbide (SiC) In The High Frequency (RF) and Power Switching Applications Introduction Work on wide bandgap materials and devices have been going on for many years. The properties of these materials are very exciting to designers because wide band gap devices promise
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Abstract: No abstract text available
Text: "Developed for EDN. For more related features, blogs and insight from the EE community, go to www.EDN.com" High-Voltage Silicon MOSFETs, GaN, and SiC: All have a place Philip Zuk, Director of Market Development, High-Voltage MOSFET Group, Vishay Siliconix
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Abstract: No abstract text available
Text: News Release FOR IMMEDIATE RELEASE Contacts: Product Communications: Michael Frisch Phone: +49 89 8780 67-147 [email protected] Media Contact: Karina Seifert Phone: +49 89 8780 67-115 [email protected] A COMPLETE RANGE OF POWER MODULES WITH VARIOUS SiC SWITCHES FOR HIGHPERFORMANCE, THREE-PHASE SOLAR INVERTERS
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SiC JFET
Abstract: normally off sic jfet silicon carbide j-fet SOIC28 RD11 RD12 RD22 NMOS4005 ac-dc wind turbine control silicon carbide JFET normally on
Text: The Leader in High Temperature Semiconductor Solutions CHT-THEMIS/CHT-ATLAS Version: 1.4 17-Feb-11 Last Modification Date PRELIMINARY DATASHEET Driver Chipset for SiC and Si Power Switches High Reliability, High Temperature Capable General description Features
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17-Feb-11
DS-100759
SiC JFET
normally off sic jfet
silicon carbide j-fet
SOIC28
RD11
RD12
RD22
NMOS4005
ac-dc wind turbine control
silicon carbide JFET normally on
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Untitled
Abstract: No abstract text available
Text: The Leader in High Temperature Semiconductor Solutions CHT-ATLAS Version: 3.4 12-Nov-13 Last Modification Date Dual Channel Power Transistor Driver General description Features CHT-ATLAS is a high-temperature, high reliability power transistor driver integrated
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12-Nov-13
DS-100781
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CHT-TIT9570A
Abstract: sic normally on fet
Text: The Leader in High Temperature Semiconductor Solutions Version: 1.2 22-Apr-11 Last Modification Date CHT-THEMIS Power Transistor Driver Controller General description Features CHT-THEMIS is the controller block of the Power Transistor Driver solution CHTTHEMIS and CHT-ATLAS. The chipset is
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22-Apr-11
DS-100782
CHT-TIT9570A
sic normally on fet
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SJEP120R125
Abstract: SiC-JFET AN-SS1 sjep120r063 SiC JFET SEMISOUTH SEMISOUTH sjep120r125 silicon carbide JFET SiC BJT SJEP120
Text: Application Note AN-SS1 Silicon Carbide Enhancement-Mode Junction Field Effect Transistor and Recommendations for Use Table of Contents 1. 2. 3. 4. 5. Page Device Overview . 2
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IJW120R070T1
Abstract: IJW120R silicon carbide
Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description
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IJW120R070T1
IJW120R070T1
IJW120R
silicon carbide
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Untitled
Abstract: No abstract text available
Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R100T1 Description
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IJW120R100T1
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Untitled
Abstract: No abstract text available
Text: APTJC120AM13VCT1AG VDSX = 1200V RDSon = 13 m max @ Tj = 25 °C ID = 100 A @ Tc = 50 °C Phase leg SiC Power Module Application • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features
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APTJC120AM13VCT1AG
SJEC120R100
SDC30S120
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Untitled
Abstract: No abstract text available
Text: XTRM Series XTR26010 HIGH TEMPERATURE INTELLIGENT GATE DRIVER FEATURES DESCRIPTION ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Supply voltage from 4.5V to 40V. ▲ Integrated charge-pump inside pull-up drivers allowing 100% duty-cycle PWM control signal.
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XTR26010
DS-00390-13
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MHS2501
Abstract: MHS2501KF
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 1 Amp SOLID STATE RELAYS DEVICES LEVELS AVAILABLE MHS2501 Series COTS CLASS H CLASS K (Consult Table 3 for Part Number Designations)
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MHS2501
T4-LDS-0153
MHS2501KF
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SiC-JFET
Abstract: SiC JFET MHS2501 175C
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 1 Amp SOLID STATE RELAYS DEVICES LEVELS AVAILABLE MHS2501 Series COTS CLASS H CLASS K (Consult Table 3 for Part Number Designations)
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MHS2501
SiC-JFET
SiC JFET
175C
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DIN 18541
Abstract: Opto Coupler TLP 621 ic 741 clamper LM 10841 IEC 60061-1 TLHY46 smd glass zener diode color codes TDC 310 NTC an 17807 a Opto Coupler TLP 521
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book leds and displays vishay semiconductors vHN-db2101-0409 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vHN-db2101-0409
DIN 18541
Opto Coupler TLP 621
ic 741 clamper
LM 10841
IEC 60061-1
TLHY46
smd glass zener diode color codes
TDC 310 NTC
an 17807 a
Opto Coupler TLP 521
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