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    NP16 Search Results

    NP16 Result Highlights (5)

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    NP161N04TUG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP160N04TUK-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP160N04TDG-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP16N06YLL-E2-AY Renesas Electronics Corporation 60 V – 16 A – N-channel Power MOS FET Visit Renesas Electronics Corporation
    NP160N055TUJ-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    NP16 Price and Stock

    Renesas Electronics Corporation NP16N06YLL-E1-AY

    ABU / MOSFET
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    DigiKey NP16N06YLL-E1-AY Digi-Reel 4,751 1
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    Renesas Electronics Corporation NP16N06QLK-E1-AY

    MOSFET 2N-CH 60V 16A 8HSON
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    Quest Components NP16N06QLK-E1-AY 727
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    HellermannTyton SNP16GHS0M4

    CBL CLAMP HOSE BLACK
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    Sealcon USA NP-16-BK

    LOCKING NUT NYLON PG16 BLACK
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    Renesas Electronics Corporation NP160N055TUK-E1-AY

    MOSFET N-CH 55V 160A TO263-7
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    NP16 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NP16 Unknown Scan PDF
    NP160N04TDG NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF
    NP160N04TDG-E1-AY NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF
    NP160N04TDG-E1-AY NEC FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 160A TO-263 Original PDF
    NP160N04TDG-E2-AY NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF
    NP160N04TUG NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF
    NP160N04TUG-E1-AY NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    NP160N04TUG-E1-AY NEC FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 160A TO-263-7 Original PDF
    NP160N04TUG-E2-AY NEC MOS FIELD EFFECT TRANSISTOR Original PDF
    NP160N04TUJ-E1-AY Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 160A TO-263-7 Original PDF
    NP160N04TUJ-E2-AY Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR Original PDF
    NP160N04TUK-E1-AY Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 160A TO-263 Original PDF
    NP160N055TUJ-E1-AY Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 160A TO-263-7 Original PDF
    NP160N055TUJ-E2-AY Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR Original PDF
    NP160N055TUK-E1-AY Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 160A TO-263 Original PDF
    NP161-19604MF-G4-BF Yamaichi Electronics Pin Grid Array / Zero Insertion Force (PGA / ZIF) Original PDF
    NP161-28902MF-G4-BF Yamaichi Electronics Pin Grid Array / Zero Insertion Force (PGA / ZIF) Original PDF
    NP161N04TUG-E1-AY Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 160A TO-263-7 Original PDF
    NP16AT General Instrument 50 V, 16 A, silicon rectifier Scan PDF
    NP16BT General Instrument 100 V, 16 A, silicon rectifier Scan PDF

    NP16 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NP160N04TUJ

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance


    Original     		NP160N04TUJ R07DS0021EJ0100 NP160N04TUJ AEC-Q101 O-263-7pin, PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP160N04TUK R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


    Original     		NP160N04TUK R07DS0543EJ0100 NP160N04TUK AEC-Q101 NP160N04TUK-E1-AY NP160N04TUK-E2-AY O-263-7pin MP-25ZT) PDF

    NP16N0

    Abstract: NP16N04YUG
    Text: Preliminary Data Sheet NP16N04YUG R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)


    Original     		NP16N04YUG R07DS0362EJ0100 NP16N04YUG AEC-Q101 NP16N04YUG-E1-AY NP16N04YUG-E2-AY NP16N0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP160N055TUK R07DS0592EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


    Original     		NP160N055TUK R07DS0592EJ0100 NP160N055TUK AEC-Q101 NP160N055TUK-E1-AY NP160N055TUK-E2-AY O-263-7pin MP-25ZT) PDF

    NP160N04TUK

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP160N04TUK R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


    Original     		NP160N04TUK R07DS0543EJ0100 NP160N04TUK AEC-Q101 NP160N04TUK-E1-AY NP160N04TUK-E2-AY O-263-7pin MP-25ZT) PDF

    36101

    Abstract: No abstract text available
    Text: PGA / ZIF NP161 Series NP161-289 02-MF-G 4-BF Socket Series No. of Leads Design No. No Mark: Without Mounting Flange MF: With Mounting Flange Insulation Resistance: Withstanding Voltage: Contact Resistance: Operating Temperature: Contact Plating Gold Terminal Style


    Original     		NP161 NP161-289 02-MF-G 10mA/20mV NP161-19604-G4-BF NP161-28902-G4-BF NP161-36101-G4-BF 36101 PDF

    d1941

    Abstract: NP161N04TUG MP-25ZT 161N04
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP161N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP161N04TUG-E1-AY Note


    Original     		NP161N04TUG NP161N04TUG NP161N04TUG-E1-AY NP161N04TUG-E2-AY O-263-7pin MP-25ZT) d1941 MP-25ZT 161N04 PDF

    160N04

    Abstract: MP-25ZT nec a640
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY Note


    Original     		NP160N04TDG NP160N04TDG NP160N04TDG-E1-AY NP160N04TDG-E2-AY O-263-7pin MP-25ZT) 160N04 MP-25ZT nec a640 PDF

    d1875

    Abstract: 160N04 D18754EJ1V0DS00 NP160N04TUG NP160N04TUG-E1-AY NP160N04TUG-E2-AY TO-263-7pin
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TUG-E1-AY Note


    Original     		NP160N04TUG NP160N04TUG NP160N04TUG-E1-AY NP160N04TUG-E2-AY O-263-7pin MP-25ZT) O-263-7pin) d1875 160N04 D18754EJ1V0DS00 NP160N04TUG-E1-AY NP160N04TUG-E2-AY TO-263-7pin PDF

    NP1610

    Abstract: cookie
    Text: 90369 NP1610 5/16/00 3:40 PM Page 1 Content-Aware Load-Balancing Increasing Web farm intelligence 90369 NP1610 5/16/00 3:40 PM Page 2 Content-Aware Load-Balancing: Increasing Web Farm Intelligence Contents Introduction 3 Content Awareness Explained 3 How Content Awareness is Used


    Original     		NP1610 0500/OC/LM/PP/10K NP1610 cookie PDF

    160N04

    Abstract: D1876 NEC160N04 TO263-7 NP160N04TDG-E1-AY NP160N04TDG-E2-AY NP160N04TDG To-263-7 MP-25ZT
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY Note


    Original     		NP160N04TDG NP160N04TDG NP160N04TDG-E1-AY NP160N04TDG-E2-AY O-263-7pin MP-25ZT) O-263-7pin) 160N04 D1876 NEC160N04 TO263-7 NP160N04TDG-E1-AY NP160N04TDG-E2-AY To-263-7 MP-25ZT PDF

    NP161

    Abstract: 36101 max 232 G4
    Text: NP161 - Zero Insertion Force Pin Grid Array PGA Specifications Part Number (Details) NP161 - 289 02 x x - G 4 - BF 1,000MΩ min. at 500V DC Insulation Resistance: Dielectric Withstanding Voltage: 700V AC for 1 minute Contact Resistance: 30m Ω max. at 10mA/20mV max.


    Original     		NP161 10mA/20mV UL94V-0 NP161-19604-G4 14x14 NP161-28902-G4 17x17 36101 max 232 G4 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP16N04YUG R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)


    Original     		NP16N04YUG R07DS0362EJ0100 NP16N04YUG AEC-Q101 NP16N04YUG-E1-AY NP16N04YUG-E2-AY exter9044 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance


    Original     		NP160N055TUJ R07DS0022EJ0100 NP160N055TUJ AEC-Q101 O-263-7pin, PDF

    WLGW2011BRW

    Abstract: WEAP2011BRW WLGW2011BAK WEAP2011BAK projects based on mobile communication and networking APWE1120 wud2011bww WEAP2011BJP yagi antennas WLPI2000BWW
    Text: NP1690.05e.qxd 9/11/01 2:52 PM Page 3 Intel 802.11b Wireless Networking for Large Organizations Networks as mobile as the people who use them Now you can be connected without being tied down – with Intel® PRO/Wireless LAN Adapters and Access Points. Fast and compatible


    Original     		NP1690 0901/OC/PL/PP/5K WLGW2011BRW WEAP2011BRW WLGW2011BAK WEAP2011BAK projects based on mobile communication and networking APWE1120 wud2011bww WEAP2011BJP yagi antennas WLPI2000BWW PDF

    NP16N06YLL

    Abstract: No abstract text available
    Text: Data Sheet NP16N06YLL R07DS1124EJ0100 Rev.1.00 Oct 30, 2013 60 V – 16 A – N-channel Power MOS FET Application: Automotive Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Low on-state resistance


    Original     		NP16N06YLL R07DS1124EJ0100 AEC-Q101 NP16N06YLL PDF

    NP160N055TUK

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP160N055TUK R07DS0592EJ0100 Rev.1.00 Dec 12, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance


    Original     		NP160N055TUK R07DS0592EJ0100 NP160N055TUK AEC-Q101 NP160N055TUK-E1-AY NP160N055TUK-E2-AY O-263-7pin MP-25ZT) PDF

    nP1609

    Abstract: No abstract text available
    Text: 90370 NP1609 5/16/00 4:47 PM Page 1 Transactional LoadBalancing Systems Delivering true server availability 90370 NP1609 5/16/00 4:47 PM Page 2 Transactional Load-Balancing Systems: Delivering True Server Availability Contents Executive Summary 3 Moving Beyond Simple Availability Checking


    Original     		NP1609 0500/OC/LM/PP/10K nP1609 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance


    Original     		NP160N04TUJ R07DS0021EJ0100 NP160N04TUJ AEC-Q101 O-263-7pin, PDF

    Untitled

    Abstract: No abstract text available
    Text: PGA / ZIF NP161 Series CHARACTERISTICS Insulation Resistance Withstanding Voltage Contact Resistance Operating Temperature L000M Q minimum at 500V DC 700VAC for one minute 30mQ maximum at 10mA/20mV -55°C ~ +170°C MATERIALS and FINISH Body PEI GF UL94V-0


    OCR Scan     		NP161 L000M 700VAC 10mA/20mV UL94V-0 NP161-289 02-MF-G 161-19604-G PDF

    ND16AT

    Abstract: NP16AT NP16BT NP16DT NP16MT np16g
    Text: GENL ÏNSTR/ POWER ~fi7 DE I 30^0137 00D2 47 7 0 y - ¿ 3 - o r NP16 NP16 M T :;í?16ÍfiM P ER E -í'SIL' C O N ¡R E eT |FtER - .N s í f S » VOLTAGE RANQE 50 to 1000 Volts CURRENT 16.0 Amperes TO-220 38 (9 65 .139 (353) .101 (4 09) r _14_(3_56J


    OCR Scan     		00Q2477 NP16AT NP16MT /16AMPERE MIL-STD-19500. T0-220 MIL-STD-202, O-220 ND16AT NP16BT NP16DT NP16MT np16g PDF

    Untitled

    Abstract: No abstract text available
    Text: NP16AT THRU NP16MT HIGH CURRENT PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 16.0 Ampere FEATURES TO-220CT ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 •190M-83 .160 4.06) •055(1.48) H4SÜ.TO


    OCR Scan     		NP16AT NP16MT O-220CT 190M-83) PDF

    Untitled

    Abstract: No abstract text available
    Text: PGA / ZJF NP161 Series CHARACTERISTICS Insulation Resistance Withstanding Voltage Contact Resistance Operating Temp. 1,000M£2 minimum at 500 VDC 700 VAC for one minute 30mQ max. at 10mA/20mV -55°C - + 170°C MATERIAL Body PEI GF UL94V-0 Contact BeCu, Gold over Nickel


    OCR Scan     		NP161 10mA/20mV UL94V-0 NP161-289 NP161-19604-G4-BF NP161-28902-G4-BF NP161-36101-G4-BF 14X14 17X17 19X19 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Table Of Contents ^Arrays Pages Pin Grid Arrays / Zero Insertion Force PG A/ZIF PG A/ZIF PG A/ZIF Open top PG A/ZIF (Interstitial) PGA / ZIF (Open Top, Interstitial) NP89 NP161 NP171 NP236 NP178 9-10 11-12 13-14 15-16 17-18 IC264 NP276 19 20-21 Ball Grid Arrays


    OCR Scan     		NP161 NP171 NP236 NP178 IC264 NP276 IC280 NP291 NP351 IC-176 PDF