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    NPN/TRANSISTOR NEC K 2500 Search Results

    NPN/TRANSISTOR NEC K 2500 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN/TRANSISTOR NEC K 2500 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1223

    Abstract: 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 2SC3604 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and


    Original     		PDF 2SC3604 2SC3604 2SC1223 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149

    CSTCE8M00G15C

    Abstract: transistor K 1413 PS2701A-1-F3 PS2801A-1 PS2801A-1-F3 PS2801A-1-F4 PS2801A-4 PS2801A-4-F3 PS2801A-4-F4 ps2701A
    Text: NEC's HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER PS2801A-1 PS2801A-4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. NEC's PS2801A-1 and PS2801A-4 is an optically coupled isolator containing a GaAs light emitting diode and a NPN silicon phototransistor. This device is mounted in a plastic


    Original     		PDF PS2801A-1 PS2801A-4 PS2801A-1 PS2801A-4 PS2701A-1-F3, CSTCE8M00G15C transistor K 1413 PS2701A-1-F3 PS2801A-1-F3 PS2801A-1-F4 PS2801A-4-F3 PS2801A-4-F4 ps2701A

    CSTCE8M00G15C

    Abstract: Switching diode 4 PS2801A-1 PS2801A-1-F3 PS2801A-1-F4 PS2801A-4 PS2801A-4-F3 PS2801A-4-F4
    Text: NEC's HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER PS2801A-1 PS2801A-4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. NEC's PS2801A-1 and PS2801A-4 is an optically coupled isolator containing a GaAs light emitting diode and a NPN silicon phototransistor. This device is mounted in a plastic


    Original     		PDF PS2801A-1 PS2801A-4 PS2801A-1 PS2801A-4 PS2801A-1-F3, CSTCE8M00G15C Switching diode 4 PS2801A-1-F3 PS2801A-1-F4 PS2801A-4-F3 PS2801A-4-F4

    NT 407 F TRANSISTOR

    Abstract: 2SC2150 2SC2585 2SC2367 NE AND micro-X NEC NE "micro x" 2SC1223 2SC3604 2SC2148 2SC2149
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578

    uPD4050

    Abstract: PD4050 PS2806-1 PS2806-1-F3 PS2806-1-F4 PS2806-4 PS2806-4-F3 PS2806-4-F4 "AC Motor" APPLICATIONS
    Text: HIGH ISOLATION VOLTAGE AC INPUT DARLINGTON TRANSISTOR TYPE SOP OPTOCOUPLER PS2806-1 PS2806-4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2500 kVr.m.s. PS2806-1 and PS2806-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon


    Original     		PDF PS2806-1 PS2806-4 PS2806-1 PS2806-4 PS2806-1-F3, PS2806-4-F3 uPD4050 PD4050 PS2806-1-F3 PS2806-1-F4 PS2806-4-F3 PS2806-4-F4 "AC Motor" APPLICATIONS

    Untitled

    Abstract: No abstract text available
    Text: PRELIMIMARY DATA SHEET HIGH CTR, 4 PIN ULTRA SMALL PACKAGE FLAT LEAD OPTOCOUPLER PS2911-1 FEATURES DESCRIPTION • SMALL AND THIN PACKAGE: 4.9 L x 2.5 (W) x 2.1 (H) mm The PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor


    Original     		PDF PS2911-1 PS2911-1 PS28XX

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET HIGH CTR, 4 PIN ULTRA SMALL PACKAGE FLAT LEAD OPTOCOUPLER PS2911-1 FEATURES DESCRIPTION • SMALL AND THIN PACKAGE: 4.9 L x 2.5 (W) x 2.1 (H) mm The PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor


    Original     		PDF PS2911-1 PS2911-1 PS28XX

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    blf578

    Abstract: MRF6V2300N ic tea 2025 NXP SMD TRANSISTOR MARKING CODE s1 TEA 2025 equivalent blf278 rf amplifier radar amplifier s-band 2SK163 GaN ADS HSMP3814
    Text: RF マニュアル第 12版 RF製品用のアプリケーションおよび設計マニュアル 2009年6月 ハイパフォーマンス・アナログを体験 NXPの RF マニュアルでRF設計がこ れまでになく簡単に 『NXPの RF マニュアル 』 は、今日RF設計者向けに市場に出回っているレファレンス・ツー


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN blf578 MRF6V2300N ic tea 2025 NXP SMD TRANSISTOR MARKING CODE s1 TEA 2025 equivalent blf278 rf amplifier radar amplifier s-band 2SK163 GaN ADS HSMP3814

    C10535E

    Abstract: NE52418 NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
    Text: DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT Heterojunction Bipolar Transistor developed for L to S band mobile communication equipment. FEATURES


    Original     		PDF NE52418 NE52418 OT-343 NE52418-T1 C10535E NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN

    20000w audio amplifier circuit diagram

    Abstract: Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767
    Text: 2nd edition RF Manual product & design manual for RF small signal discretes product & design manual for RF small signal discretes 2nd edition October 2002 Page: 1 2nd edition RF Manual product & design manual for RF small signal discretes Content 1. 2. 3.


    Original     		PDF BB202, BGA6589 20000w audio amplifier circuit diagram Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    PS2003

    Abstract: PS2003B NEC photo coupler
    Text: NEC PHOTO COUPLER B fC IR O N O E V K PS2003B PHOTO COUPLER -NEPOC SERIES - DESCRIPTION The PS2003B is an o p tic a lly coupled isolator containing a GaAs lig h t em ittin g diode and an NPN silicon ph oto transistor. FEATURES PACKAGE DIMENSIONS in m illim eter! in c h n


    OCR Scan     		PDF PS2003B PS2003B PS2003 NEC photo coupler

    TG 2309

    Abstract: NEC photo coupler
    Text: DATA SHEET NEC PHOTO COUPLER PS2732 ELECTRON DEVICE HIGH ISOLATION VOLTAGE H IG H COLLECTOR TO EM ITTER VOLTAGE SO P PHOTO C O U PLER D E SC R IP T IO N P A C K A G E D IM E N S IO N S Unit: mm The PS2732 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon darlingtonconnected photo-transistor.


    OCR Scan     		PDF PS2732 PS2732 PS2732-E3, PS2732-F3, RC-1009B: PS2732-E3* PS2732-F3* PS2732-E4 PS2732-F4 TG 2309 NEC photo coupler

    NEC K 2500

    Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3604 2SC3604 15obots NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150

    2SC2150

    Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3604 2SC3604 2SC3603 2SC2150 2SC1223 TRANSISTOR 2sC 5250 micro X

    transistor NEC D 586

    Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
    Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise


    OCR Scan     		PDF 2SC3587 2SC3587 transistor NEC D 586 nec a 634 NEC D 586 NEC K 2500 NEC 3500

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    transistor KJJ

    Abstract: 4N25 25c diode 14N25 4N25 pin
    Text: N E C ELECTRONICS I NC 72 • 64 27 5 2 5 N E C ELECTRONICS INCi jk/JTV'* 72C 09235 D ]>F|b M 57S2S :?_1 / lf r v L NEC Electronics Inc. 000=1535 4N25 P H O TO CO UP LER s in g le t r a n s is t o r NEPOC SERIES Description Features The' 4N25 is an optically coupled isolator containing a


    OCR Scan     		PDF 457SaS 2500VDc \50ll transistor KJJ 4N25 25c diode 14N25 4N25 pin

    ic ta 7698

    Abstract: No abstract text available
    Text: NEC DATA SHEET PHOTO COUPLER PS2733 ELECTRON DEVICE H IG H ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE SOP PHOTO COUPLER D E S C R IP T IO N The P S2733 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon darlingtonconnected photo-transistor.


    OCR Scan     		PDF PS2733 PS2733 PS2733-E3, PS2733-F3, PS2732 RC-1009B: PS2733-E3* S2733-F3* PS2733-E4 ic ta 7698

    NEC PS2001B

    Abstract: PS2001B ps2001
    Text: SEC PHOTO BECTM M DEVICE COUPLER PS2001B PHOTO COUPLER INDUSTRIAL USE -NEPO C SERIES - DESCRIPTION The PS2001B is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo transistor. FEATURES PACKAGE DIMENSIONS • High isolation voltage


    OCR Scan     		PDF PS2001B PS2001B NEC PS2001B ps2001