NPN 1000V 15A Search Results

NPN 1000V 15A Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

NPN 1000V 15A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NTE2311 Abstract: npn 1000V 15A NPN Transistor VCEO 1000V Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V	Original	NTE2311 NTE2311 npn 1000V 15A NPN Transistor VCEO 1000V	PDF
Untitled Abstract: No abstract text available Text: ^zml-tonauctoi U^i , Lfnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor MJE18006 DESCRIPTION • Collector-Base Breakdown Voltage:V(BR)CBO=1000V(Min) • High Switching Speed	Original	MJE18006 O-220C	PDF
triac mw 131 600d Abstract: 65n06 Text: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717	Original		PDF
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN	PDF
npn 1000V 15A Abstract: NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION •Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO SUS = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in	Original	MJW16010A npn 1000V 15A NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V	PDF
transistor VCE 1000V Abstract: npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a Text: NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line– operated Switchmode Power supplies and electronic light ballasts. Features:	Original	NTE2333 NTE2333 130mA, 650mA 600mA, transistor VCE 1000V npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a	PDF
npn 1000V 100a Abstract: D7ST1008 1S697 D7ST100805 D7ST1010 D7ST1012 50c020 Text: -p W Ê R Ë X DE i T S T H t i S l IN C " m tÊ B sx. v f f U I X t A A IN O y o u Æ o / ' b ü aD02b7S T \| TT _- 3333-1] R 5 D7ST1008, D7ST1010, D7ST1012 Tentative Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 NPN Power Switching	OCR Scan	7214t21 T-33-15 D7ST100& D7ST1010, D7ST1012 Amperes/1000 D7ST1008/1010/1012, D7ST1008/1010/1012 D7ST1012 npn 1000V 100a D7ST1008 1S697 D7ST100805 D7ST1010 50c020	PDF
NPN Transistor VCEO 1000V Abstract: transistor BUX81/9 Text: BUX81 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR PostScript Picture C:\GRAPHICS\TO204AA EPS Applications The BUX81 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and	Original	BUX81 \GRAPHICS\TO204AA BUX81 204AA 100kHz NPN Transistor VCEO 1000V transistor BUX81/9	PDF
NPN Transistor VCEO 1000V Abstract: bux81 npn 1000V 15A vbe 10v, vce 500v NPN Transistor transistor Text: BUX81 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)	Original	BUX81 BUX81 NPN Transistor VCEO 1000V npn 1000V 15A vbe 10v, vce 500v NPN Transistor transistor	PDF
transistor Abstract: No abstract text available Text: BUX81 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)	Original	BUX81 BUX81 transistor	PDF
NPN transistor Ic 50A td tr ts tf Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO -218 NPN SILICON HIGH VOLTAGE POWER TRANSISTOR ABSOLUTE MAXIMUM RATING:	Original	X10-4 NPN transistor Ic 50A td tr ts tf	PDF
MJW16010A Abstract: X10-4 Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO -247 NPN SILICON HIGH VOLTAGE POWER TRANSISTOR ABSOLUTE MAXIMUM RATING:	Original		PDF
2n2222 texas instruments Abstract: BY206 TIPL757 TIPL757A n-p-n r.f. power transistors npn 1000V 15A D037D Text: TEX AS I NST R -COPTO} ta DE JflTblTEt. D D 3 7 D 4 4 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C 37044 D f ,7""- 3S-/S“ TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS i electrical characteristics at 25 ° C case temperature (unless otherwise noted) - PARAM ETER	OCR Scan	TIPL757, TIPL757A TIPL757 TIPL757A TIPL760, TIPL760A TIPL761 2n2222 texas instruments BY206 n-p-n r.f. power transistors npn 1000V 15A D037D	PDF
Untitled Abstract: No abstract text available Text: TE X A S IN ST R -COPTO! 8 9 0 1 7 2 6 TEXAS INSTR ÎOPTO D 62C 3 6 6 4 9 BUX48, BUX48A N-P-N SILICON POW ER TRANSISTORS ~ r - ? 3 - t a r OCTOBER 1982 - REVISED OCTOBER 1984 • 175 W a t 2 5 ° C C ase Temperature • 15 A Continuous Collector Current •	OCR Scan	BUX48, BUX48A	PDF

Untitled Abstract: No abstract text available Text: S EM E BUL50A LA B MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 4.50 (0.177) M ax. 3.55 (0.140) 3.81 (0.150) 2 1 3 1.65 (0.065) 2.13 (0.084)	Original	BUL50A 300ms	PDF
BZX85C12V Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes	Original	DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E	PDF
70413080 Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180 Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919	Original	2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180	PDF
MJW16010A Abstract: No abstract text available Text: J , U na. C/ TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 usA MJW16010A Silicon NPN Power Transistor DESCRIPTION • Low Collector Saturation Voltage • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 500V(Min) Wide Area of Safe Operation	Original	MJW16010A T100r MJW16010A	PDF
Untitled Abstract: No abstract text available Text: BUX33A BUX33A BUX33B MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . DESCRIPTION 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )	Original	BUX33A BUX33B BUX33 300ms,	PDF
npn 1000V 15A Abstract: BUX33 transistor VCE 1000V vbe 10v, vce 500v NPN Transistor npn high voltage transistor 500v 8a NPN Transistor VCEO 1000V BUX33A BUX33B Text: BUX33A BUX33A BUX33B MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . DESCRIPTION 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )	Original	BUX33A BUX33B BUX33 300ms, npn 1000V 15A transistor VCE 1000V vbe 10v, vce 500v NPN Transistor npn high voltage transistor 500v 8a NPN Transistor VCEO 1000V BUX33A BUX33B	PDF
BUX348APF Abstract: NPN Transistor VCEO 1000V Text: SEMELAB LTD 0133107 37E 3> SEMELAB MÖL 0 £ BUX 348APF NEW PRODUCT NPN PLANAR TRANSISTOR MULTI EMITTER ION-IMPLANTED FOR FAST SWITCHING APPLICATIONS MECHANICAL DATA Dimensionsin mm FEATURES 50 200 • HIGH BREAKDOWN VOLTAGE • LOW SATURATION VOLTAGE • WIDE AREA OF SECONDARY	OCR Scan	0000E1Ö 348APF T03PBL BUX348APF NPN Transistor VCEO 1000V	PDF
L755A Abstract: tipl7 37041 Text: TEXA S I N S T R -COPTO} 8961726 bS TEXAS INSTR DE IflTblTEb DD37D35 3 OPTO 62C 3 7 0 3 5 T - S D 3 ' f * TlPL75*ï TIPL7<5RA N-P-N SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED O CTOBER 19 8 4 • 180 W at 2 5 ° C C ase Temperature • 10 A Continuous Collector Current	OCR Scan	DD37D35 TlPL75* TIPL755 L755A 7S26S D037D4E TIPL755 L755A tipl7 37041	PDF
MG75M2CK1 Abstract: tkp7 Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain	OCR Scan	MG75M2CK1 MG75M2CK1 tkp7	PDF
transistor t2a 82 Abstract: transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors Text: TELEFUNKEN ELECTRONIC 17E D • f l ^ O O U 000^533 BUT 76 BUT 76 A TTilUliFOiMISlIMelectronic C m to* HichnotoQits T '3 3 -i3 S ilic o n NPN P o w er T ra n sisto rs Applications: Switching mode power supply, inverters, motor control and relay driver Features:	OCR Scan	T-33-/3 T0126 15A3DIN transistor t2a 82 transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors	PDF

NPN 1000V 15A Search Results

NPN 1000V 15A Result Highlights (5)

NPN 1000V 15A Datasheets Context Search

NTE2311

Untitled

triac mw 131 600d

Diode 400V 5A

npn 1000V 15A

transistor VCE 1000V

npn 1000V 100a

NPN Transistor VCEO 1000V

NPN Transistor VCEO 1000V

transistor

NPN transistor Ic 50A td tr ts tf

MJW16010A

2n2222 texas instruments

Untitled

Untitled

BZX85C12V

70413080

MJW16010A

Untitled

npn 1000V 15A

BUX348APF

L755A

MG75M2CK1

transistor t2a 82