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    NPN 10A 800V Search Results

    NPN 10A 800V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    NPN 10A 800V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sc3090

    Abstract: npn 10a 800v 10A Switching Regulator
    Text: SavantIC Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage VCBO 800V ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·500V/10A Switching Regulator Applications


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    2SC3090 00V/10A 2sc3090 npn 10a 800v 10A Switching Regulator PDF

    2SC3090

    Abstract: 2SC309 npn 10a 800v 10A Switching Regulator
    Text: JMnic Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage VCBO≥800V ・Fast switching speed ・Wide ASO(Safe Operating Area) APPLICATIONS ・500V/10A Switching Regulator Applications


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    2SC3090 VCBO800V) 00V/10A 2SC3090 2SC309 npn 10a 800v 10A Switching Regulator PDF

    npn 10a 800v

    Abstract: 2SC3090
    Text: Inchange Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage VCBO≥800V ・Fast switching speed ・Wide ASO(Safe Operating Area) APPLICATIONS ・500V/10A Switching Regulator Applications


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    2SC3090 VCBO800V) 00V/10A npn 10a 800v 2SC3090 PDF

    2SC3090

    Abstract: ITR05351 ITR05352 ITR05353 ITR05354 ITR05355
    Text: Ordering number:EN1013C NPN Triple Diffused Planar Silicon Transistor 2SC3090 500V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3090] 15.6


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    EN1013C 2SC3090 00V/10A VCBO800V) 2SC3090] 2SC3090 ITR05351 ITR05352 ITR05353 ITR05354 ITR05355 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN1013C NPN Triple Diffused Planar Silicon Transistor 2SC3090 500V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3090] 15.6


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    ENN1013C 2SC3090 00V/10A VCBO800V) 2SC3090] PW300 cycle10% PDF

    EN1013C

    Abstract: 2SC3090
    Text: Ordering number:EN1013C NPN Triple Diffused Planar Silicon Transistor 2SC3090 500V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · Fast switching speed. · Wide ASO. unit:mm 2022 [2SC3090] E : Emitter


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    EN1013C 2SC3090 00V/10A VCBO800V) 2SC3090] PW300 EN1013C 2SC3090 PDF

    BUX80

    Abstract: npn 10a 800v 1N5802 npn transistors 400V low power
    Text: BUX80 POWER TRANSISTORS 10A, 800V, Fast Switching, Silicon NPN Mesa FEATURES DESCRIPTION • • • • These high voltage triple diffused glass passivated power transistors combine fast switching, low saturation voltage and rugged E s/b capability. They are designed for use in


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    BUX80 500nS 250iiS; 50//S; BUX80 npn 10a 800v 1N5802 npn transistors 400V low power PDF

    T10H 250V

    Abstract: 2N5877 equivalent tektronix 475 2N6406 2N6408 2N5877 npn 10a 800v 2N5875 BUX82 IN4933
    Text: BUX82 POWER TRANSISTORS 6A, 800V, Fast Switching, Silicon NPN Mesa FEATURES DESCRIPTION • Collector-Base Voltage: up to 800V • Peak Collector Current: 10A • On Time: < 500nS @ 2.5A These high voltage glass passivated power tra n sisto rs c o m b in e fa s t sw itching, low


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    BUX82 500nS 180/tH 500kHz 1N5820 T10H 250V 2N5877 equivalent tektronix 475 2N6406 2N6408 2N5877 npn 10a 800v 2N5875 BUX82 IN4933 PDF

    222A Transistor

    Abstract: 222A 22a ic npn 10a 800v BU4530AW transistor 800V 1A NPN Transistor 1500V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU4530AW DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color


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    BU4530AW 100mA; 222A Transistor 222A 22a ic npn 10a 800v BU4530AW transistor 800V 1A NPN Transistor 1500V PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application Equivalent Circuit C • • • • High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications


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    KSC5302DM O-126 KSC5302DMTU KSC5302DMSTU KSC5302DM PDF

    Diode GP 514

    Abstract: pnp 500v KA9282B DARLINGTON 1A 60V npn to92 2N3904TA DARLINGTON 3A 100V npn to92 8A SOT23 SOT23 NPN KA9220B diode 60V 8A
    Text: PRODUCT GUIDE PART NO. 2N3904TA/3904 2N3906/3906AT 2N4400/4401 2N4402/4403 2N6515 2N6517 2N652Q KSP05/06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP55 KSP92 KST06TF KST10TF KST14TF KST2222ATF KST2907ATF KST3904TF KST3906TF KST42TF KST4401TF KST4403TF


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    2N3904TA/3904 2N3906/3906AT 2N4400/4401 2N4402/4403 2N6515 2N6517 2N652Q KSP05/06 KSP10 KSP13 Diode GP 514 pnp 500v KA9282B DARLINGTON 1A 60V npn to92 2N3904TA DARLINGTON 3A 100V npn to92 8A SOT23 SOT23 NPN KA9220B diode 60V 8A PDF

    KSC5302D

    Abstract: No abstract text available
    Text: KSC5302D KSC5302D High Voltage High Speed Power Switch Application • • • • High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time


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    KSC5302D O-220 KSC5302DTU KSC5302D PDF

    npn 10a 800v

    Abstract: 2SC3949 2SC394 npn vce 850 transistors
    Text: JMnic Product Specification 2SC3949 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ,high speed APPLICATIONS ・For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter


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    2SC3949 npn 10a 800v 2SC3949 2SC394 npn vce 850 transistors PDF

    2SC3993

    Abstract: No abstract text available
    Text: Ordering number:EN2236D NPN Triple Diffused Planar Silicon Transistor 2SC3993 800V/16A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.


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    EN2236D 2SC3993 00V/16A 2048B 2SC3993] 2SC3993 PDF

    npn 10a 800v

    Abstract: 2SC3949
    Text: Inchange Semiconductor Product Specification 2SC3949 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ,high speed APPLICATIONS ・For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector


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    2SC3949 npn 10a 800v 2SC3949 PDF

    NTE386

    Abstract: npn 10a 800v
    Text: NTE386 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high– speed power switching in inductive circuit where fall time is critical. This device is particularly suited


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    NTE386 NTE386 300ms, npn 10a 800v PDF

    LB-008

    Abstract: lc08a LB 125 transistor Triple Diffused
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


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    KSC5338D/KSC5338DW O-220 LB-008 lc08a LB 125 transistor Triple Diffused PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION * * * * * TO-220 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


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    KSC5338D/KSC5338DW O-220 T0-220 C35sià PDF

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


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    Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier PDF

    NTE2584

    Abstract: npn 10a 800v
    Text: NTE2584 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V


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    NTE2584 NTE2584 npn 10a 800v PDF

    NB 20 transistor

    Abstract: 250V transistor npn 2a 300V transistor npn 2a npn 10a 800v KSC5338D
    Text: KSC5338D NPN SILICON TRANSISTOR TO-220 z z z z HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION Wide S.O.A. Built-in Free-wheel Diode Suitable for ballast App;ication Low Variable Storage-time spread ABSOLUTE MIXIMUM RATING Characteristic Collector Base Voltage


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    KSC5338D O-220 NB 20 transistor 250V transistor npn 2a 300V transistor npn 2a npn 10a 800v KSC5338D PDF

    RVEFB340150

    Abstract: No abstract text available
    Text: Motor Controllers Variable Frequency AC Drives Type VariFlex2 RVEF • AC variable speed drive for use with AC induction motors • Sensorless vector control or V/F mode, high starting torque • Input voltage ranges: 1-ph 110VAC, 1- ph 230VAC, 3-ph 230VAC, 3-ph 480VAC


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    110VAC, 230VAC, 480VAC RS232 RS485 FB120220 RVEFB120150F* RVEFB120220F* RVEFB320150 RVEFB340150 PDF