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    NPN 331 Search Results

    NPN 331 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    SF Impression Pixel

    NPN 331 Price and Stock

    Lumberg Automation ASB 8/LED NPN 5-4-331-RS120M

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ASB 8/LED NPN 5-4-331-RS120M
    • 1 $206.91
    • 10 $206.91
    • 100 $206.91
    • 1000 $206.91
    • 10000 $206.91
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    Lumberg Automation ASB 8/LED NPN 5-4-331/10 M

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ASB 8/LED NPN 5-4-331/10 M
    • 1 $240.3
    • 10 $236.81
    • 100 $235.48
    • 1000 $235.48
    • 10000 $235.48
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    Lumberg Automation SB 8/LED NPN 3-333/10 M

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SB 8/LED NPN 3-333/10 M
    • 1 -
    • 10 $205.89
    • 100 $204.7
    • 1000 $204.7
    • 10000 $204.7
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    Lumberg Automation ASB 8/LED NPN 5-4-331/5 M

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ASB 8/LED NPN 5-4-331/5 M
    • 1 -
    • 10 $183.33
    • 100 $183.33
    • 1000 $183.33
    • 10000 $183.33
    Get Quote

    NPN 331 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    123AP

    Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
    Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge


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    PDF 123AP NTE159) NTE396) NTE375) NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130

    sfh 3310

    Abstract: IEC 61760-1
    Text: 2007-05-29 Silicon NPN Phototransistor with Vλ Characteristics NPN-Silizium-Fototransistor mit Vλ-Charakteristik Version 1.0 SFH 3310 Features: Besondere Merkmale: • Spectral range of sensitivity: 350 . 970 nm • Spektraler Bereich der Fotoempfindlichkeit:


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    PDF D-93055 sfh 3310 IEC 61760-1

    Untitled

    Abstract: No abstract text available
    Text: 2014-01-14 Silicon NPN Phototransistor with Vλ Characteristics NPN-Silizium-Fototransistor mit Vλ-Charakteristik Version 1.1 SFH 3310 Features: Besondere Merkmale: • Spectral range of sensitivity: typ 350 . 970 nm • Package: 3mm Radial (T 1), Epoxy


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    PDF D-93055

    GH1-231QG

    Abstract: GH1-231QH GH1-231QK GH1-231QX GH1-331QA GH1-331QB GH1-331QD GH1-331QE GH1-431QC GH1-431QF
    Text: GH1 电感式接近开关 31 5 外形编号 检测距离 Sn[mm] NPN 常开 NPN 常闭 GH1-331QA GH1-331QB NPN 一开一闭 DC PNP 常开 备 型 PNP 常闭 PNP 一开一闭 型 二线制 常开 具 二线制 常闭 号 二线制 常开 AC 二线制 常闭


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    PDF GH1-331QA GH1-331QB GH1-431QC GH1-331QD GH1-331QE GH1-431QF GH1-231QG GH1-231QH GH1-231QK GH1-231QX GH1-231QG GH1-231QH GH1-231QK GH1-231QX GH1-331QA GH1-331QB GH1-331QD GH1-331QE GH1-431QC GH1-431QF

    sfh 3310

    Abstract: 560nm GEOY6446 OHLY0598 npn phototransistor 560nm
    Text: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)


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    GEOY6446

    Abstract: OHLY0598 npn phototransistor 560nm
    Text: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)


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    Untitled

    Abstract: No abstract text available
    Text: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)


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    Untitled

    Abstract: No abstract text available
    Text: 2N5002 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5003 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E


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    PDF 2N5002 2N5003 MIL-PRF-19500 2N5002J) 2N5002JX) 2N5002JV) MIL-STD-750 MIL-PRF-19500/534

    Untitled

    Abstract: No abstract text available
    Text: 2N5004 Silicon NPN Transistor Data Sheet Description Applications • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5004J


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    PDF 2N5004 MIL-PRF-19500 2N5004J) 2N5004JX) 2N5004JV) MIL-STD-750 MIL-PRF-19500/534

    2N5002

    Abstract: 2N5002J 2N5002JV 2N5002JX 2N5003
    Text: 2N5002 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5003 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E


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    PDF 2N5002 2N5003 MIL-PRF-19500 2N5002J) 2N5002JX) 2N5002JV) MIL-STD-750 MIL-PRF-19500/534 2N5002 2N5002J 2N5002JV 2N5002JX 2N5003

    2N5004

    Abstract: 2N5004 JANTXV NPN/transistor C 331 switching transistor 331 2N5004J 2N5004JV 2N5005
    Text: 2N5004 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5005 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E


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    PDF 2N5004 2N5005 MIL-PRF-19500 2N5004J) 2N5004JX) 2N5004JV) MIL-STD-750 MIL-PRF-19500/534 2N5004 2N5004 JANTXV NPN/transistor C 331 switching transistor 331 2N5004J 2N5004JV 2N5005

    2N5004

    Abstract: No abstract text available
    Text: 2N5004 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5005 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E


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    PDF 2N5004 2N5005 MIL-PRF-19500 2N5004J) 2N5004JX) 2N5004JV) MIL-STD-750 MIL-PRF-19500/534 2N5004

    Untitled

    Abstract: No abstract text available
    Text: BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications.


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    PDF BCX56-10R1 OT-89 inch/1000 100mA 250mA 500mA

    philips bfq

    Abstract: BFQ263 BFQ263A RK 100
    Text: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with


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    PDF BFQ263; BFQ263A 711062b 0045bi 711Qfl2b T-33-05 philips bfq BFQ263 BFQ263A RK 100

    npn transistor dc 558

    Abstract: BFQ22S transistor dc 558 npn BFQ24 Transistor 5331 BFQ22
    Text: Philips Semiconductors • ^ 53*331 Q O B IS Ü T 4 4 e! M APX Product specification NPN 6 GHz wideband transistor " ■111,1 BFQ22S b'IE J> N AMER PHILIPS/DISCRETE DESCRIPTION PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the


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    PDF BFQ22S BFQ24. bb53c131 DD3151S BFQ22S npn transistor dc 558 transistor dc 558 npn BFQ24 Transistor 5331 BFQ22

    40411 transistor

    Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
    Text: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66


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    PDF 2N6465 2N6466 2N6468 2N6469 2N6470 2N6471 2N6472 2N6495 2N6496 2N6500 40411 transistor transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors NPN general purpose transistor BC846W; BC847W; BC848W PIN CONFIGURATION FEATURES • S- mini package. n* n1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN Top view DESCRIPTION


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    PDF BC846W; BC847W; BC848W OT323 MBC670 BC846AW: BC846BW: BC847W: BC846W

    Untitled

    Abstract: No abstract text available
    Text: ri7 SGS-THOMSON ^ 7# usiieBsiiLEeraoiiies BUL67 HIGH VOLTAGE FAST-SWITCHING NPN POW ER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH RUGGEDNESS NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED


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    PDF BUL67 BUL67

    Untitled

    Abstract: No abstract text available
    Text: @ OFTEK Product Bulletin OP593A June 1996 NPN Plastic Silicon Phototransistors Types OP593, OP598 Series Features • Wide receiving angle • Variety of sensitivity ranges • TO-18 equivalent package style Description The OP593/598 series consist of NPN


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    PDF OP593A OP593, OP598 OP298 /OP598

    Untitled

    Abstract: No abstract text available
    Text: 0 . OPTEK Product Bulletin OP593A June 1996 NPN Plastic Silicon Phototransistors Types OP593, OP598 Series Features • Wide receiving angle • Variety of sensitivity ranges • TO-18 equivalent package style Description The OP593/598 series consist of NPN


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    PDF OP593A OP593, OP598 OP593/598 OP593JOP598

    Untitled

    Abstract: No abstract text available
    Text: Central CMPTA29 Sem iconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA29 is a Silicon NPN Darlington T ransistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring


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    PDF CMPTA29 CMPTA29 OT-23 100mA, 100mA 100MHz

    2N2222A 331

    Abstract: No abstract text available
    Text: I lll iF t i mi 2N2222ACSM4 SEME LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN


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    PDF 2N2222ACSM4 2N2222A 150mA 00D15Ã 2N2222A 331

    Tfk 880

    Abstract: TFK 804 TFK 802 S45C tfk bfx89 BFX89 tfk 332 ir tfk case BFX89
    Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis in den GHz-Bereich Applications: General, up to the GHz ränge Besondere Merkmale: Features: • Leistungsverstärkung 7 dB • Power gain 7 dB


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    PDF BFX89 470pF 20x4x0 Tfk 880 TFK 804 TFK 802 S45C tfk bfx89 BFX89 tfk 332 ir tfk case BFX89