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    NPN GERMANIUM Search Results

    NPN GERMANIUM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    NPN GERMANIUM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N439

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N439 - 2N439A NPN HIGH FREQUENCY COMPUTER TRANSISTORS 2N439 and 2N439A are NPN alloy-junction germanium transistors. Their basic NPN nature (high mobility electron flow) renders


    Original     		2N439 2N439A 2N439A 2N439Ahas PDF

    transistor ac 127

    Abstract: AC127 AC 127 npntransistor Transistor AC
    Text: AC 127 npn-Transistor legierter npn-GermaniumTransistor Der Transistor AC 127 ist für die Verwendung als NF-Verstärker geeignet. Die Anschlüsse sind vom Gehäuse elektrisch isoliert


    Original     		PDF

    nte102

    Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3
    Text: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:


    Original     		NTE102 NTE103 200mV nte102 NTE103 vpt 20 germanium transistors NPN NTE10-3 PDF

    NTE131MP

    Abstract: NTE155 NTE131 germanium transistors NPN Germanium power
    Text: NTE131 PNP & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications.


    Original     		NTE131 NTE155 100mA NTE131MP NTE155 NTE131 germanium transistors NPN Germanium power PDF

    nec 2501

    Abstract: ic nec 2501 NESG250134 2501 NEC
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification


    Original     		NESG250134 NESG250134-Tconductor nec 2501 ic nec 2501 NESG250134 2501 NEC PDF

    NEC JAPAN

    Abstract: NESG3031M14 NESG3031M14-T3
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification


    Original     		NESG3031M14 NESG3031M1conductor NEC JAPAN NESG3031M14 NESG3031M14-T3 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification


    Original     		NESG2031M05 NESG2031M05 NESG2031M05-T1 PDF

    nec 2501

    Abstract: NESG240034 ic nec 2501 2501 nec
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD 34 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.


    Original     		NESG240034 NESG240034 NESG240034-A M8E0904E nec 2501 ic nec 2501 2501 nec PDF

    NESG220033

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG220033 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD 33 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.


    Original     		NESG220033 NESG220033 NESG220033-A M8E0904E PDF

    HBT transistor s parameters measures

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210833 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD 33 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.


    Original     		NESG210833 NESG210833 NESG210833-A M8E0904E HBT transistor s parameters measures PDF

    nec 2501

    Abstract: ic nec 2501 2501 NEC NESG220034
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG220034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD 34 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.


    Original     		NESG220034 NESG220034 NESG220034-A M8E0904E nec 2501 ic nec 2501 2501 NEC PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification


    Original     		NESG2031M16 NESG2031M16 NESG2031M16-T3 PU10394EJ01V0DS PDF

    R7A marking

    Abstract: NESG240033
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240033 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD 33 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.


    Original     		NESG240033 NESG240033 NESG240033-A M8E0904E R7A marking PDF

    BFU725F

    Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
    Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		BFU725F OT343F JESD625-A BFU725F germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power PDF

    NESG3031M05

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification


    Original     		NESG3031M05 NESG3031M05 NESG3031M05-T1 PDF

    BFU725F

    Abstract: germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference JESD625-A Germanium power
    Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		BFU725F OT343F JESD625-A BFU725F germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference Germanium power PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications


    Original     		NESG2021M16 NESG2021M16-A M8E0904E PDF

    NTE102A

    Abstract: germanium transistors NPN nte103a germanium transistor pnp npn germanium Germanium power
    Text: NTE102A PNP & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		NTE102A NTE103A 300mA 500mA, NTE102A germanium transistors NPN nte103a germanium transistor pnp npn germanium Germanium power PDF

    NESG3031M05-T1-A

    Abstract: NESG3031M05
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification


    Original     		NESG3031M05 NESG3031M05 NESG3031M05-T1-A PDF

    Germanium power

    Abstract: No abstract text available
    Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 2 — 22 December 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		ON5088 OT343F JESD625-A Germanium power PDF

    BFU610F

    Abstract: SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power
    Text: BFU610F NPN wideband silicon germanium RF transistor Rev. 01 — 17 June 2010 Objective data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		BFU610F OT343F BFU610F SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power PDF

    Untitled

    Abstract: No abstract text available
    Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		BFU710F OT343F JESD625-A PDF

    Untitled

    Abstract: No abstract text available
    Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		BFU760F OT343F JESD625-A PDF

    M33 nec

    Abstract: M33 TRANSISTOR NESG2046M33 marking T7
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification


    Original     		NESG2046M33 NESG2046M33-T3 M33 nec M33 TRANSISTOR NESG2046M33 marking T7 PDF