HN4C05JU
Abstract: No abstract text available
Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Unit: mm Low Frequency Amplifier Applications Muting Applications Switching Applications Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) High Collector Current :IC=400mA(Max.)
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HN4C05JU
400mA
HN4C05JU
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Untitled
Abstract: No abstract text available
Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifer Applications Muting Application Switching Application Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA High Collector Current :IC=400mA(Max.)
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HN1C05FE
400mA
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hn1c05FE
Abstract: No abstract text available
Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA High Collector Current :IC=400mA(Max.)
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HN1C05FE
400mA
hn1c05FE
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Untitled
Abstract: No abstract text available
Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Unit: mm Low Frequency Amplifer Applications Muting Application Switching Application Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) High Collector Current :IC=400mA(Max.)
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HN4C05JU
400mA
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Untitled
Abstract: No abstract text available
Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Low Frequency Amplifier Applications Muting Applications Switching Applications Unit: mm z Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) z High Collector Current : IC = 400mA(Max.)
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HN4C05JU
400mA
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Untitled
Abstract: No abstract text available
Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application z Low Saturation Voltage: VCE(sat)(1) = 15mV (typ.) :@ IC = 10mA/ IB = 0.5mA z High Collector Current : IC = 400mA (max)
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HN1C05FE
400mA
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Untitled
Abstract: No abstract text available
Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Low Frequency Amplifier Applications Muting Applications Switching Applications z Unit: mm Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) z High Collector Current :IC=400mA(Max.)
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HN4C05JU
400mA
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Untitled
Abstract: No abstract text available
Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application z Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA z High Collector Current :IC=400mA(Max.)
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HN1C05FE
400mA
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SOT-89
Abstract: TSB1664CY TSD1664 sot89 "NPN TRANSISTOR"
Text: TSD1664 Low Frequency NPN Transistor BVCEO = 20V Ic = 800mA VCE SAT , = 0.15V(typ.) @Ic / Ib = 400mA / 20mA Pin assignment: 1. Base 2. Collector 3. Emitter Features Ordering Information Low VCE (SAT). Part No. Excellent DC current gain characteristics
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TSD1664
800mA
400mA
TSB1664CY
OT-89
TSB1664
OT-89
SOT-89
TSB1664CY
TSD1664
sot89 "NPN TRANSISTOR"
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HN4C05JU
Abstract: No abstract text available
Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Low Frequency Amplifier Applications Muting Applications Switching Applications z Unit: mm Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) z High Collector Current :IC=400mA(Max.)
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HN4C05JU
400mA
HN4C05JU
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hn1c05FE
Abstract: No abstract text available
Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application z Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA z High Collector Current :IC=400mA(Max.)
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HN1C05FE
400mA
hn1c05FE
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor HN1C07F Unit: mm Features Excellent Current Gain hFE linearity :hFE=25(min) at VCE=6V,IC=400mA 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50
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HN1C07F
400mA
100mA
100mA,
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FZT694B
Abstract: DSA003714
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT694B TYPICAL CHARACTERISTICS IC/IB=200 0.8 - Volts - (Volts) IC/IB =10 0.6 0.6 0.2 0.1 1 1.4 0.01 10 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC
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OT223
FZT694B
200mA
100mA,
200mA,
400mA,
50MHz
FZT694B
DSA003714
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2SC4296
Abstract: No abstract text available
Text: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max
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2SC4296
Pulse20)
400min
10typ
85typ
100max
FM100
2SC4296
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LB1233
Abstract: LB1234 Array Of Independent Diodes, Dip16 LB1231 LB1232 IN4 diode
Text: Ordering number : EN1188F Monolithic Digital IC LB1231 Series High-Voltage, Large Current Darlington Transistor Array Overview The circuit configuration of this IC is of 7-channel Darlington transistor array consisting of NPN transistors. It is especially
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EN1188F
LB1231
500mA)
LB1231
LB1232
LB1233
LB1234
LB1233
LB1234
Array Of Independent Diodes, Dip16
LB1232
IN4 diode
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2SC4130
Abstract: FM20 transistor+2sC4130
Text: 2SC4130 Silicon NPN Epitaxial Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=3A 10 to 30 16.9±0.3 100max IC=25mA IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V Tj
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2SC4130
Pulse14)
100max
400min
15typ
50typ
O220F)
2SC4130
FM20
transistor+2sC4130
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Untitled
Abstract: No abstract text available
Text: EMD9FHA / UMD9NFHA / IMD9AFRA EMD9 / UMD9N / IMD9A NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet AEC-Q101 Qualified <For DTr1(NPN)> lOutline Parameter VCC IC(MAX.) R1 R2 Value EMT6 50V 100mA 10kW 47kW (6) (1) EMD9 EMD9FHA
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AEC-Q101
100mA
-100mA
SC-107C)
OT-353
SC-88)
OT-457
SC-74)
DTC114Y
DTA114Y
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA V 7 V V(BR)CEO IC=10mA 800min IC 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat)
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2SC3678
100max
800min
50typ
MT-100
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR IC/IB=200 -55°C +25°C +100°C +175°C Tamb=25°C IC/IB=100 0.8 0.8 IC/IB =10 0.6 IC/IB=100 0.6 E C ABSOLUTE MAXIMUM RATINGS. 0.4 0.2 PARAMETER 0.2 0.01 0.1 1 0.01 10 + 1.4 0.1 1 10 + +100°C +25°C
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OT223
FZT694B
200mA
100ms
100us
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bc182c
Abstract: t092 BC182LC BC237B bc182l T0-92 bc186 BC212
Text: SEMELAB LTD 37E » Ö1331Ö7 0GGG032 4 IS nL B T ~ -^ 7 -o Reliability Option TVpe No. Package Polarity v CEO •c cont hF E @ V c e /Ic »T Pd BC182B BC182C BC182L BC182LA BC182LB NPN NPN NPN NPN NPN T092 T092 T092 T092 T092 50 50 50 50 50 0.2 0.2 0.2 0.2
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0GGG032
BC182B
BC182C
BC182L
BC182LA
BC182LB
BC182LC
BC183
BC183A
BC183B
t092
BC237B bc182l
T0-92
bc186
BC212
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2sc3474
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC3474 INDUSTRIAL APPLICATIONS Unit in mm SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. &8MAX. FEATURES : . High DC Current: Gain : hFE=500 Min. (Ic=400mA) . Low Saturation Voltage: VcE(sat)=0 •5V(Max.) (Ic=300mA) 06±015
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OCR Scan
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2SC3474
400mA)
300mA)
100mA
2sc3474
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PDF
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2SC3474
Abstract: No abstract text available
Text: 2SC3474 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS Unit in a SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. S8MAX. FEATURES : . High DC Current Gain : hFE=500 Min. (Ic=400mA) . Low Saturation Voltage: VcE(sat)=0-5V(Max.)(Ic=300mA) Û 9 5M A X .
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OCR Scan
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2SC3474
400mA)
300mA)
2SC3474
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC3673 Unit in mm SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. • High DC Current Gain: hj-j;=500 Min. (Ic=400mA) • Low Saturation Voltage: V^£(sat)=0.5V (Max.) (Ic=300mA) MAXIMUM RATINGS (Ta=25° C) SYMBOL RATING
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OCR Scan
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2SC3673
400mA)
300mA)
400mA
300mA,
300mAf
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PDF
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2SC3964
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC3964 SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. TEMPERATURE COMPENSATED FOR AUDIO AMPLIFIER OUTPUT STAGE. FEATURES: . High ÜC Current Gain : hpE= 500 Min. (Ic=400nA) . Low Saturation Voltage : VcE(sat)=0-5V(Max.) (Ic=300raA)
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2SC3964
400nA)
300raA)
2SC3964
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