2SC1947 equivalent
Abstract: 2sc1947 RF Power Amplifiers 1P H transistor
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm
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2SC1947
175MHz
175MHz
2SC1947
2SC1947 equivalent
RF Power Amplifiers
1P H transistor
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transistor D 2331
Abstract: 2331 TRANSISTOR T31B
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed fo r RF power amplifiers in 1.65GHz. 4 + 0.5 C1.5MAX C1.5MAX FEATURES
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2SC4838
2SC4838
65GHz.
65GHz,
transistor D 2331
2331 TRANSISTOR
T31B
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2SC1729
Abstract: 1 w NPN EPITAXIAL PLANAR TYPE
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1729 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio amplications. Dimensions in mm FEATURES • •
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2SC1729
175MHz
175MHz.
T-31E
175MHz
1 w NPN EPITAXIAL PLANAR TYPE
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2SC1324
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed for industrial use RF broadband amplifiers from VHF to UHF band. Dim ensions in mm FEATURES •
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2SC1324
2SC1324
770MHz
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2sc1968
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •
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2SC1968A
2SC1968A
470MHz
470MHz.
2sc1968
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12w 5d
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES
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2SC3629
2SC3629
520MHz,
12w 5d
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968A is a silicon NPN epitaxial planar type transistor de signed for RF power amplifiers on UHF band mobile radio applications. Dimensions in mm FEATURES •
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2SC1968A
2SC1968A
470MHz
470MHz.
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Transistor BFw 92
Abstract: TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor
Text: BFW 92 "W Silizium-NPN-Planar-HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: Hochfrequenzverstärker bis in den GHz-Bereich Applications: RF-amplifier up to G Hz range Besondere Merkmale: Features: • Hohe Leistungsverstärkung • High pow er gain
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596/0776A1
470pF
20x8x0
Transistor BFw 92
TRANSISTOR BFW 11
BFW92
bfw glass
bfw 10 transistor
BFw 92
NPN planar RF transistor
bfw 11
bfw 30 transistor
BFW 42 transistor
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2SC730
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm
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2SC730
2SC730
150MHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed for industrial use RF broadband amplifiers from VHF to UHF band. D im ensions in mm FEATURES •
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2SC1324
2SC1324
770MHz
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2SC730
Abstract: TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band
Text: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile Dimensions in mm radio applications.
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2SC730
2SC730
150MHz
TRANSISTOR 1P
f150m
RF NPN POWER TRANSISTOR l band
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2SC2694
Abstract: DATA transistor 2SC2694 2sc2694 application note 2SC2694 equivalent
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2694 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2694 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm R1 FEATURES •
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2SC2694
2SC2694
175MHz
175MHz,
DATA transistor 2SC2694
2sc2694 application note
2SC2694 equivalent
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2SC2237
Abstract: 8w RF POWER TRANSISTOR NPN RF TRANSISTOR RF POWER TRANSISTOR NPN vhf 7001k
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2237 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2237 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES •
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2SC2237
175MHz
175MHz.
175MHz
2SC2237
8w RF POWER TRANSISTOR NPN
RF TRANSISTOR
RF POWER TRANSISTOR NPN vhf
7001k
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2540 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2540 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm R1 FEATURES •
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2SC2540
2SC2540
175MHz
175MHz,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2S C 2131 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2131 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications. Dimensions in mm FEATURES •
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2SC2131
500MHz
150MHz
150MHz
450MHz)
100pF,
01/iF,
200/iF
01/iF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm R1 FEATURES •
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2SC2097
2SC2097
30MHz
30MHz,
2k3k5k10k
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2SC1969
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions i'
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2SC1969
2SC1969
27MHz
O-220
27MHz.
150mA
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2SC2086
Abstract: 50S5 transistor U4 NPN Silicon Epitaxial Planar Transistor to92 2sc2086 transistor
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2086 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC2086 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES
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2SC2086
2SC2086
27MHz
50S5
transistor U4
NPN Silicon Epitaxial Planar Transistor to92
2sc2086 transistor
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2056 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band portable or hand-held radio applications. Dimensions in mm
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2SC2056
2SC2056
175MHz
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2SC2695
Abstract: RF POWER TRANSISTOR TIA 80
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2695 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2695 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band m obile radio applications. Dimensions \nmm FEATURES •
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2SC2695
520MHz
520MHz.
RF POWER TRANSISTOR
TIA 80
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2SC1946A
Abstract: C 1946A RF TRANSISTOR
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1946A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1946A is a silicon NPN epitaxial planar type transistor de Dimensions in mm signed for RF power amplifiers on V H F band mobile radio applications. FEATURES
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2SC1946A
2SC1946A
C 1946A RF TRANSISTOR
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2SC2055
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC20S5 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. FEATURES • High power gain: Gpe > 1 3 d B
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2SC20S5
2SC2055
175MHz
--j25iJ
5k7k10k
2SC2055
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2sc1968a
Abstract: 2sc1968
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1968A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2S C 1968A is a silicon NPN epitaxial planar type transistor de signed for RF power amplifiers on U H F applications. Dimensions in mm band mobile radio FEATURES
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2SC1968A
2SC1968A
470MHz
470MHz.
T-31E
470MH
2sc1968
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RF NPN POWER TRANSISTOR l band
Abstract: transistor su 312
Text: • 0 D1 7 5 4 4 sm ■ MITSUB.SH. RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1968 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on UHF band mobile radio applications.
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2SC1968
470MHz
470MHz.
GD1754b
2SC1968
RF NPN POWER TRANSISTOR l band
transistor su 312
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