2SC4703-T1
Abstract: NE46234 2SC4703 2SC470-3
Text: NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage
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NE46234
2SC4703
2SC4703
OT-89)
dBV/75
PU10339EJ01V1DS
2SC4703-T1
2SC470-3
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2SC4093
Abstract: 2SC4093-T1 R26 transistor R27 transistor
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4093 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
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2SC4093
2SC4093
S21e2
2SC4093-T1
R26 transistor
R27 transistor
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MRF839
Abstract: MRF839F
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF839 MRF839F The RF Line NPN Silicon RF Power Transistors 2 3 W 806-960 MHz RF POWER TRANSISTORS COMMON-EMITTER NPN SILICON . . . designed for 12.5 Volt UHF large-signal, common-emitter amplifier applications in
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MRF839F
MRF839
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NEC 2501
Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features
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2SC4536
2SC4536
OT-89)
PU10338EJ01V0DS
NEC 2501
2SC4536-T1
ic nec 2501
2501 NEC
nec RF package SOT89
qs marking sot-89
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nec 2501
Abstract: ic nec 2501 nec RF package SOT89 2SC4703 2501 NEC 2SC4703-T1 2SC470-3
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .
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2SC4703
2SC4703
OT-89)
PU10339EJ01V1DS
nec 2501
ic nec 2501
nec RF package SOT89
2501 NEC
2SC4703-T1
2SC470-3
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inductor vk200
Abstract: VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer
Text: i MRF238 MOTOROLA Advance Information 30 W — 160 MHz The RF Line RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for 13.6 Volt VHF large»signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.
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MRF238
inductor vk200
VK200 INDUCTOR
MRF238
VK200-4B
VK200 4B inductor
vk200 rf choke
rasistor
marine radio
02CM
arco trimmer
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si diode 1N4007
Abstract: MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • • • • 50 W, 960 MHz RF POWER TRANSISTOR NPN SILICON
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MRF6414
MRF6414PHT/D
MRF6414
MRF8414
si diode 1N4007
MRF841
MOTOROLA TRANSISTOR 935
150 watts power amplifier layout
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ic nec 2501
Abstract: nec 2501 2501 NEC 2SC4703-T1 2SC4703 2SC470-3 nec RF package SOT89
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .
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2SC4703
2SC4703
OT-89)
PU10339EJ01V0DS
ic nec 2501
nec 2501
2501 NEC
2SC4703-T1
2SC470-3
nec RF package SOT89
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Motorola transistors MRF455
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • 60 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —
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iF/15
VK200-20/4B,
56-590-65/3B
MRF455
Motorola transistors MRF455
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transistor bd135
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3032 The RF Line NPN Silicon RF Power TVansistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON
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TP3032
TP3032
BD135
transistor bd135
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2N5643
Abstract: No abstract text available
Text: New TELEPHONE: 201 376-2922 3STERNAVE. PRINGFIELD, NEW JERSEY 07081 .S.A. (212) 227-6005 FAX: (201) 376-8960 2N5643 The RF Line 40 W- 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed primarily for wideband large-signal amplifier stages in
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2N5643
30Vdc.
2N5643
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transistor 2sc3355 and application
Abstract: transistor 2sc3355 and application NOTICE 2SC3355 2SC3355, npn 2SC3355-T PA33
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.
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2SC3355
2SC3355
2SC3355-T
PU10208EJ01V0DS
transistor 2sc3355 and application
transistor 2sc3355 and application NOTICE
2SC3355, npn
2SC3355-T
PA33
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vk200 coil
Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON
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MRF321
vk200 coil
jmc 5201
ferroxcube 56-590-65
VK200-19
FERROXCUBE VK200
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MRF232
Abstract: H546
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF232 The RF Line 7.5 W - 9 0 M Hz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON .design ed for 12.5 Volt, mid-band large-signal amplifier appli cations in industrial and commercial FM equipment operating in the
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MRF232
MRF232
H546
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MRF315
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF315 The RF Line NPN Silicon RF Power TVansistors . . . designed primarily for wideband large-signal output amplifier stages in the 30 to 200 MHz frequency range. 45 W, 30 to 200 MHz RF POWER TRANSISTORS NPN SIUCON • Guaranteed Performance at 150 MHz, 28 Vdc
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MRF315
-19/4B
MRF315
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BLH*3355
Abstract: BLH3355 blh335 uhf amplifier design Transistor NPN planar RF transistor high power npn UHF transistor
Text: BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP BLH3355 Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier Structure
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BLH3355
BLH3355)
BLH*3355
BLH3355
blh335
uhf amplifier design Transistor
NPN planar RF transistor
high power npn UHF transistor
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2SC1947 equivalent
Abstract: 2sc1947 RF Power Amplifiers 1P H transistor
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm
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2SC1947
175MHz
175MHz
2SC1947
2SC1947 equivalent
RF Power Amplifiers
1P H transistor
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transistor D 2331
Abstract: 2331 TRANSISTOR T31B
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed fo r RF power amplifiers in 1.65GHz. 4 + 0.5 C1.5MAX C1.5MAX FEATURES
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2SC4838
2SC4838
65GHz.
65GHz,
transistor D 2331
2331 TRANSISTOR
T31B
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2SC1729
Abstract: 1 w NPN EPITAXIAL PLANAR TYPE
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1729 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio amplications. Dimensions in mm FEATURES • •
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2SC1729
175MHz
175MHz.
T-31E
175MHz
1 w NPN EPITAXIAL PLANAR TYPE
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2N5641
Abstract: No abstract text available
Text: JBe-tnl-donduoioi Lpioducti, Una. fc/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5641 The RF Line 7.0 W - 175MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . designed primarily for wideband large-signal amplifier stages in
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2N5641
175MHz
-30Vdc,
2N5641
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SOT343R
Abstract: SC 2272 IC vco 900 1800 mhz "dual TRANSISTORs" sot363 BFG480W bga2004 BGA2709 PBR951 BGA2771 BFG310W/XR
Text: Semiconductors Philips RF wideband transistors and MMICs for wireless RF Wideband Transistors RF Wideband Transistors Type fT Vceo GHz (V) SOT23, NPN PMBHT10 PBR941 PBR951 SOT23, PNP PMBTH81 BFG310/XR BFG325/XR SOT323, NPN BFS17W PRF547 PRF957 SOT323, PNP
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PMBHT10
PBR941
PBR951
PMBTH81
BFG310/XR
BFG325/XR
OT323,
BFS17W
PRF547
PRF957
SOT343R
SC 2272
IC vco 900 1800 mhz
"dual TRANSISTORs" sot363
BFG480W
bga2004
BGA2709
PBR951
BGA2771
BFG310W/XR
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2SC1324
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed for industrial use RF broadband amplifiers from VHF to UHF band. Dim ensions in mm FEATURES •
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2SC1324
2SC1324
770MHz
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2n5109
Abstract: transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor
Text: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER
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2N5109
CP214
2N5109
transistor 2N5109
2n5109 transistor
transistor marking code AL
VCE-15V
NPN transistor marking NY
chip die npn transistor
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NTE335
Abstract: J341 NPN 250W NTE336 n-p-n r.f. power transistors J201 equivalent
Text: NTE335 & NTE336 Silicon NPN Transistor RF Power Output Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:
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NTE335
NTE336
NTE335
NTE336
30MHz.
30MHz
1817pF
777pF
J341
NPN 250W
n-p-n r.f. power transistors
J201 equivalent
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