NPN SILICON EPITAXIAL PLANAR TRANSISTOR Search Results

NPN SILICON EPITAXIAL PLANAR TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

NPN SILICON EPITAXIAL PLANAR TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LLE18100X Abstract: MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431 Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product specification November 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18100X FEATURES	Original	LLE18100X OT437A LLE18100X MRA543 1702 NPN transistor transistor 431 ab BDT85 MCD660 MRA542 transistor w 431	PDF
epsilam 10 Abstract: BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16 Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial	Original	LFE18500X epsilam 10 BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16	PDF
epsilam 10 Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239 Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial	Original	LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239	PDF
2N5320 Abstract: 2N5321 2N5322 2N5323 Text: 2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS • ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal	Original	2N5320 2N5321 2N5322 2N5323 2N5320 2N5321 2N5323	PDF
2N5320 Abstract: 2N5321 2N5321 THOMSON 2N5322 2N5323 Text: 2N5320 2N5321 SMALL SIGNAL NPN TRANSISTORS • ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND 2N5323 DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal	Original	2N5320 2N5321 2N5322 2N5323 2N5320 2N5321 2N5321 THOMSON 2N5323	PDF
2SC2312 Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb Text: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating	OCR Scan	2SC2312 27MHz 27MHz, -30dB -62dB -65dB. 2SC2312 100mA 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD TC200 Preliminary NPN EPITAXIAL SILICON TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR DESCRIPTION The UTC TC200 is an epitaxial planar NPN transistor; it uses UTC’s advanced technology to provide the customers with high DC	Original	TC200 TC200 TC200L-x-T92-B TC200G-x-T92-B TC200L-x-T92-K TC200G-x-T92-K QW-R201-087	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are	Original	MMDT8050S MMDT8050S MMDT8050SG-AL6-R OT-363 QW-R218-012	PDF
MMST2222A Abstract: MMST2907A Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor MMST2222A FEATURES z Epitaxial planar die construction. Pb z Complements the MMST2907A. Lead-free z Ultra-small surface mount package. APPLICATIONS z NPN Silicon Epitaxial Planar Transistor.	Original	MMST2222A MMST2907A. OT-323 BL/SSSTF006 MMST2222A MMST2907A	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are	Original	MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R MMDT8150L-AL6-R OT-363 QW-R218-017	PDF
free IC npn transistor Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are	Original	MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 2012ues QW-R218-012 free IC npn transistor	PDF
n24 transistor Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are	Original	MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 MMDT8050SL-AL6-R QW-R218-012 n24 transistor	PDF
2N5770 Abstract: T0-92A T092A Text: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal high frequency amplifiers and oscillators. I CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage	OCR Scan	2N5770 2N5770 T0-92A 625mW 300mW 60MHz -3-00C4C9 3MHS321 B0kfe947y T0-92A T092A	PDF
2N5770 Abstract: T0-92A MICRO ELECTRONICS ltd transistor Text: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal High frequency amplifiers and oscillators. 1 CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage	OCR Scan	2N5770 T0-92A 625mW 300mW 60MHz -3-00B4g0 T0-92A MICRO ELECTRONICS ltd transistor	PDF

Silicon NPN Epitaxial Planar Type Abstract: NPN Silicon Epitaxial Planar Transistor 2SD2098 Text: 2SD2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Description The 2SD2098 is an epitaxial planar type NPN silicon transistor. Features * Excellent DC Current Gain Characteristics * Low Saturation Voltage, Typically VCE SAT =0.25V	Original	2SD2098 OT-89 2SD2098 100MHz 01-Jun-2002 Silicon NPN Epitaxial Planar Type NPN Silicon Epitaxial Planar Transistor	PDF
1N3904 Abstract: 2N3903 2N3904 2N3906 2N3906/1N3904 Text: NPN SILICON PLANAR EPITAXIAL TRANSISTORS \ ^ ' r ï y ^ ï Ÿ . . . . . CASE T0-92A 2N3903, 2N3904 are NPN silicon planar epitaxial transistors designed for general purpose switching and amplifier applications. They are complementary to PNP types 2N3905 and 2N3906.	OCR Scan	2N3903, 2N3904 2N3906. T0-92A 200mA 350mW 2N3903 100pA 1N3904 2N3906 2N3906/1N3904	PDF
e50u Abstract: 2SD2098 BCP2098 NPN Silicon Epitaxial Planar Transistor Text: BCP2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogan & lead-free Description SOT-89 The BCP2098 is an epitaxial planar type NPN silicon transistor. Features * Excellent DC Current Gain Characteristics	Original	BCP2098 OT-89 BCP2098 50VEB 100MHz 01-Jun-2002 2SD2098 e50u 2SD2098 NPN Silicon Epitaxial Planar Transistor	PDF
2N1893 Abstract: 100khz 5v transistor npn Text: 2N NPN SILICON PLANAR EPITAXIAL TRANSISTOR rv/ii CASE TO-39 2N1893 is an NPN silicon planar epitaxial transistor designed for audio amplifier output stage and medium power industrial applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	2N1893 500mA 800mW 0Q33G3, 20MHz 100kHz 100khz 5v transistor npn	PDF
MPS6512 Abstract: transistor mps6515 MPS6513 MPS6514 MPS6515 MPS65L5 Text: .« g NPN SILICON PLANAR EPITAXIAL TRANSISTORS CASE TO-92A MPS6512 thru' MPS6515 are NPN silicon planar epitaxial transistors designed for general purpose amplifier applications and for com plementary circuitry. E b 'c ABSOLUTE MAXIMUM RATINGS MPS6512/3	OCR Scan	MPS6512 MPS65L5 T0-92A MPS6512/3 MPS6514/5 100mA 100mA 350mW 350mW transistor mps6515 MPS6513 MPS6514 MPS6515	PDF
BSX79 Abstract: DIN 41876 BSX7 Text: Nicht für Neuentwicklungen Not for new developments BSX79 Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: Schalter Applications: Switches Features: Besondere Merkmale: • Hohe Strom verstärkung	OCR Scan	BSX79 BSX79 DIN 41876 BSX7	PDF
2N2484 Abstract: No abstract text available Text: NPN 2N2484 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2484 are a silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are intended for use in high-performance, low-noise amplifier circuits from audio to high-frequency. Compliance to RoHS.	Original	2N2484 2N2484	PDF
BCP2098 Abstract: No abstract text available Text: BCP2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 DESCRIPTION The BCP2098 is an epitaxial planar type NPN silicon transistor. 4 1 FEATURES   2 3	Original	BCP2098 OT-89 BCP2098 BCP2098-Q BCP2098-R 100MHz 19-May-2011	PDF
2SA816 Abstract: 2SC1626 BOX69477 COB20 MIPO Text: 2SA816 •2SC1626 PNP . NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS THE 2SA816 PNP AND 2SC1626 (NPN) ARE SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR THE DRIVER STAGES OF 30-50W HI-FI AMPLIFIERS. THEY ARE ALSO SUITABLE FOR MEDIUM SPEED	OCR Scan	2SA816 2SC1626 2SC1626 0-50V T0-220B 750mA 500mA 150mA 2SA816 BOX69477 COB20 MIPO	PDF
transistor 3569 Abstract: 3569 pN3569 Text: M NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit ching applications for collector current up to 500mA. MECHANICAL OUTLINE	OCR Scan	500mA. O-92A Vcb-40V Ta-75Â 150mA IB-15mA Ic-150Â BOXfc9477 VCE-10V transistor 3569 3569 pN3569	PDF

NPN SILICON EPITAXIAL PLANAR TRANSISTOR Search Results

NPN SILICON EPITAXIAL PLANAR TRANSISTOR Result Highlights (5)

NPN SILICON EPITAXIAL PLANAR TRANSISTOR Datasheets Context Search

LLE18100X

epsilam 10

epsilam 10

2N5320

2N5320

2SC2312

Untitled

Untitled

MMST2222A

Untitled

free IC npn transistor

n24 transistor

2N5770

2N5770

Silicon NPN Epitaxial Planar Type

1N3904

e50u

2N1893

MPS6512

BSX79

2N2484

BCP2098

2SA816

transistor 3569