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    NPN SOT23 MARK NF Search Results

    NPN SOT23 MARK NF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    NPN SOT23 MARK NF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    8F SOT-23 PNP on

    Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
    Text: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process


    Original     		FDLL914 LL-34 FDLL914A FDLL914B FDLL916 FDLL916A 8F SOT-23 PNP on 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor PDF

    NPN sot23 mark NF

    Abstract: BC846 BC846A BC846B BC847 BC847A BC847B BC847C S0113D
    Text: S e m i c o n d u c t o r " BC846A BC846B BC847A BC847B BC847C SOT-23 SOT-23 Mark: 1 A ./1 B Mark: 1 E ./ 1 F ./ 1 G . NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1.0 jiA to 50 mA.


    OCR Scan     		BC846A BC846B OT-23 BC847A BC847B BC847C BC846 BC847 NPN sot23 mark NF BC846B BC847C S0113D PDF

    Cross Reference sot23

    Abstract: FAIRCHILD SOT-23 MARK 30
    Text: BC846/847/848/849/850 BC846/847/848/849/850 Switching and Amplifier Applications 3 • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector


    Original     		BC846/847/848/849/850 BC849, BC850 BC856 BC860 OT-23 BC846 BC847/850 BC848/849 Cross Reference sot23 FAIRCHILD SOT-23 MARK 30 PDF

    FAIRCHILD SOT-23 MARK 1a

    Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
    Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.


    Original     		BC847A BC847B BC847C OT-23 BC846A BC846B BC847A BC847B BC846A FAIRCHILD SOT-23 MARK 1a BC846 SOT23 NPN sot23 mark NF 847C BC846 BC847 fAIRCHILD BC847b PDF

    Untitled

    Abstract: No abstract text available
    Text: Discrete POWER & Signal Technologies National Semiconductor Surface Mount Transistors NPN General Purpose Amplifiers and Switches Device No. SOT-23 Mark MMBT100 (N1) MMBT100A (N1A) Case Style TO-236 (49) TO-236 (49) (V) Min (V) Min (V) Min 75 45 6 75 45


    OCR Scan     		OT-23 MMBT100 MMBT100A O-236 MMBTA05 MMBT5551 MMBT2222 PDF

    BC850

    Abstract: BC849 BC846 BC848 "MARKING CODE P" BC846 SOT-23 bc847 BC856 BC860 mark 720
    Text: UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES *Suitable for automatic insertion in thick and thin-film circuits. *Complement to BC856 … BC860 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted


    Original     		BC846/BC847/BC848/BC849/BC850 BC856 BC860 OT-23 BC846 BC847 BC850 BC848 BC849 BC850 BC849 BC846 "MARKING CODE P" BC846 SOT-23 BC856 BC860 mark 720 PDF

    NB SOT-23 NPN

    Abstract: marking NB SOT-23 transistors marking ND NPN sot23 mark NF FHRC105 FHRC104 FHRC109
    Text: ࡒᔜྯ૵਌ Resistive Transistors Resistive Transistors ࡒᔜྯ૵਌ NPN Silicon FHRC101～FHRC109 DESCRIPTION & FEATURES 概述及特點 With Built-in Bias Resistors 內部基極帶阻 Simplify Circuit Design 簡單的回路設計 Reduce a Quantity of Parts and Manufacturing Process


    Original     		FHRC101FHRC109) OT-23 OT-23 FHRC101 FHRC102 FHRC103 FHRC104 FHRC105 FHRC106 FHRC107 NB SOT-23 NPN marking NB SOT-23 transistors marking ND NPN sot23 mark NF FHRC109 PDF

    marking code P

    Abstract: BC849 bc848 BC850
    Text: UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES *Suitable for automatic insertion in thick and thin-film circuits. *Complement to BC856 … BC860 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted


    Original     		BC846/BC847/BC848/BC849/BC850 BC856 BC860 OT-23 BC846 BC847 BC850 BC848 BC849 marking code P PDF

    PN2222A

    Abstract: PN2222 MMPQ2222 MMBT2222A NMT2222 PZT2222A SOIC-16
    Text: PN2222A MMBT2222A PZT2222A C C E E C C TO-92 BE SOT-23 B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch


    Original     		PN2222A MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 PN2222A PN2222 MMPQ2222 MMBT2222A NMT2222 PZT2222A SOIC-16 PDF

    IC 7403

    Abstract: PN2222A npn general purpose amplifier MMBT2222A MMPQ2222 NMT2222 PZT2222A SOIC-16 IC VS 1307 national PN2222A
    Text: PN2222A MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: 100 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced


    Original     		PN2222A MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 IC 7403 PN2222A npn general purpose amplifier MMBT2222A MMPQ2222 NMT2222 PZT2222A SOIC-16 IC VS 1307 national PN2222A PDF

    BCW71 FAIRCHILD

    Abstract: sot23 mark E coding
    Text: BCW71 BCW71 C E SOT-23 B Mark: K1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		BCW71 OT-23 BCW71 ND87Z BCW71 FAIRCHILD sot23 mark E coding PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222A / PZT2222A NPN General-Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. C C E E SOT-23 Mark:1P C SOT-223 B Figure 1. MMBT2222A Device Package


    Original     		MMBT2222A PZT2222A 500mA. OT-23 OT-223 PZT2222A MMBT2222A OT-23 PDF

    BCW65C

    Abstract: No abstract text available
    Text: BCW65C BCW65C C E SOT-23 B Mark: ED NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		BCW65C OT-23 BCW65C PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted


    Original     		BCW66G 500mA. OT-23 150degrees BCW66G PDF

    1N916

    Abstract: BSR17A
    Text: BSR17A BSR17A C E SOT-23 B Mark: U92 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings*


    Original     		BSR17A OT-23 1N916 BSR17A PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC2712 NPN EPITAXIAL PLANAR TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES 3 *High Voltage and High Current :VCEO=50V,IC=150mA Max. *Excellent hFE Linearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *High hFE:hFE=70~700 *Low Noise:NF=1dB(Typ.),10dB(MaX.)


    Original     		2SC2712 150mA 2SA1162 OT-23 100mA QW-R206-029 PDF

    BC548 BH

    Abstract: BC547 NPN Transistor BC547B npn bc338 signal transistor transistor MPSA77 BC546B SOT23 transistor low noise pnp
    Text: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) TYPE NO. BVCBO BVCEO BVEBO *BVCES ICBO @ *I CEV @ VCB (V) (V) (V) (V) (nA) MIN MIN MIN MAX hFE @ VCE @ IC (V) (mA) VCE (SAT) @ IC toff Cob fT (pF) (MHz)


    Original     		OT-23 350mW CMPT8099 CMPT2222A CMPT2222AE CMPT3904 CMPT3904E CMPT4401 BC548 BH BC547 NPN Transistor BC547B npn bc338 signal transistor transistor MPSA77 BC546B SOT23 transistor low noise pnp PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW71 BCW71 C E SOT-23 B Mark: K1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		BCW71 OT-23 PDF

    BCW65C

    Abstract: No abstract text available
    Text: N BCW65C C E SOT-23 B Mark: ED NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		BCW65C OT-23 BCW65C PDF

    MARKING 5D NPN

    Abstract: MARK 5D SOT sot-23 Marking 3D Kst5089
    Text: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088


    Original     		KST5088/5089 OT-23 KST5088 KST5089 MARKING 5D NPN MARK 5D SOT sot-23 Marking 3D PDF

    2N5551

    Abstract: MMBT5551
    Text: N MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		MMBT5551 2N5551 OT-23 2N5551 MMBT5551 PDF

    BF242

    Abstract: No abstract text available
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C C B E TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol


    Original     		2N5551 MMBT5551 2N5551 OT-23 OT-23 BF242 PDF

    2N5551

    Abstract: MMBT5551
    Text: MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		MMBT5551 2N5551 OT-23 2N5551 MMBT5551 PDF

    MPS5179

    Abstract: TRANSISTOR C 3223 MPS5179 small signal transistor MMBT5179 PN5179
    Text: MPS5179 PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		MPS5179 PN5179 MMBT5179 OT-23 MPS5179 MMBT5179 TRANSISTOR C 3223 MPS5179 small signal transistor PN5179 PDF