sot23-6 package marking d619
Abstract: marking D619 d619 zxtd09n50de6ta
Text: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.
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ZXTD09N50DE6
ZUMT619
ZXTD09N50DE6TA
ZXTD09N50DE6TC
OT23-6
OT23-6
sot23-6 package marking d619
marking D619
d619
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d619
Abstract: sot23-6 package marking d619 transistor d619 data ZUMT619 ZXTD09N50DE6 ZXTD09N50DE6TA ZXTD09N50DE6TC
Text: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.
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ZXTD09N50DE6
ZUMT619
OT23-6
OT23-6
ZXTD09N50DE6TA
ZXTD09N50D:
d619
sot23-6 package marking d619
transistor d619 data
ZXTD09N50DE6
ZXTD09N50DE6TA
ZXTD09N50DE6TC
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2SC5287
Abstract: transistor 2SC5287 DSA0016511
Text: 2SC5287 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator and General Purpose 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 5(Pulse10) A hFE IC IC=10mA 550min VCE=4V, IC=1.8A 10 to 25
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2SC5287
MT-100
100max
Pulse10)
550min
50typ
2SC5287
transistor 2SC5287
DSA0016511
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2SC5287
Abstract: No abstract text available
Text: 2SC5287 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator and General Purpose 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 5(Pulse10) A hFE IC IC=10mA 550min VCE=4V, IC=1.8A 10 to 25
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2SC5287
MT-100
100max
Pulse10)
550min
50typ
2SC5287
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3631D/L TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING. FEATURES ・Low Collector Saturation Voltage : VCE sat =0.5V(Max.) at (IC=0.5A). ・High Switching Speed Typically. : tf≅0.4 S at IC=1A. ・Complementary to KTA1862D.
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KTC3631D/L
KTA1862D.
500mA
500mA,
100mA
-100mA,
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current : IC=-800mA. ・DC Current Gain : hFE=100～630 VCE=-1V, Ic=-100mA . ・For Complementary with NPN type BC338.
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-800mA.
-100mA)
BC338.
BC328
-100mA
-500mA,
-50mA
-300mA
-10mA,
100MHz
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2SC3835
Abstract: DSA0016507
Text: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max
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2SC3835
100max
120min
Pulse14)
30typ
110typ
MT-100
2SC3835
DSA0016507
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2SC3680
Abstract: No abstract text available
Text: 2SC3680 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor V IEBO VEB=7V 100max µA V V V(BR)CEO IC=10mA 800min 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 IB 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A
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2SC3680
100max
800min
Pulse14)
105typ
MT-100
2SC3680
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2SC3834
Abstract: transistor 1022
Text: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A
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2SC3834
100max
120min
Pulse14)
30typ
110typ
MT-25
2SC3834
transistor 1022
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2SC3679
Abstract: No abstract text available
Text: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A
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2SC3679
Pulse10)
100max
800min
75typ
MT-100
2SC3679
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Untitled
Abstract: No abstract text available
Text: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA V 7 V V(BR)CEO IC=10mA 800min IC 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat)
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2SC3678
100max
800min
50typ
MT-100
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2sc3835
Abstract: No abstract text available
Text: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA V V V(BR)CEO IC=50mA 120min 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A
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2SC3835
100max
120min
Pulse14)
30typ
110typ
MT-100
2sc3835
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BC327 45V 800mA PNP Transistor
Abstract: BC337 45V 800mA NPN Transistor transistor bc337 datasheet BC327 BC337 BC327 800mA PNP Transistor
Text: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=-1V, Ic=-100mA . ᴌFor Complementary with NPN type BC337.
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BC327
-800mA.
-100mA)
BC337.
BC327 45V 800mA PNP Transistor
BC337 45V 800mA NPN Transistor
transistor bc337 datasheet
BC327
BC337
BC327 800mA PNP Transistor
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BC328
Abstract: BC338 BC338N
Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=-1V, Ic=-100mA . ᴌFor Complementary with NPN type BC338.
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BC328
-800mA.
-100mA)
BC338.
BC328
BC338
BC338N
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BC328
Abstract: BC338 transistor bc328
Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=1V, Ic=100mA . ᴌFor Complementary with PNP type BC328.
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BC338
800mA.
100mA)
BC328.
BC328
BC338
transistor bc328
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vbe 12v, vce 600v NPN Transistor
Abstract: 2SC3831
Text: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor 1max mA VCEO 500 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 500min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max
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2SC3831
Pulse20)
100max
500min
105typ
MT-100
vbe 12v, vce 600v NPN Transistor
2SC3831
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Untitled
Abstract: No abstract text available
Text: 2SC3680 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor Ratings Unit ICBO VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 3.5 A VCE(sat) IC=3A, IB=0.6A
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2SC3680
Pulse14)
100max
800min
105typ
MT-100
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25C1252
Abstract: TE 8802
Text: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 120 V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A
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2SC3834
Pulse14)
100max
120min
30typ
110typ
MT-25
25C1252
TE 8802
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2SC3831
Abstract: vbe 12v, vce 600v NPN Transistor transistor npn 12V 1A Collector Current
Text: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor VCB=600V VCEO 500 V IEBO VEB=10V 10 V V(BR)CEO 10(Pulse20) A hFE mA 100max µA IC=25mA 500min V VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max
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2SC3831
Pulse20)
100max
500min
105typ
MT-100
2SC3831
vbe 12v, vce 600v NPN Transistor
transistor npn 12V 1A Collector Current
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buf646
Abstract: buf646a
Text: T e m ic BUF646 • BUF646A Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses
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BUF646
BUF646A
BUF646
D-74025
18-Jul-97
buf646a
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BC328
Abstract: BC338
Text: SEMICONDUCTOR TECHNICAL DATA BC328 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC338.
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BC328
-800mA.
-100mA)
BC338.
BC328
BC338
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BC327
Abstract: BC337 BC327 W 75 BC327 transistor BC337 45V 800mA NPN Transistor
Text: SEMICONDUCTOR TECHNICAL DATA BC327 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC337.
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BC327
-800mA.
-100mA)
BC337.
BC327
BC337
BC327 W 75
BC327 transistor
BC337 45V 800mA NPN Transistor
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TRANSISTOR VCE 400V 500mA
Abstract: KTA1862D
Text: KTC3631D/L SEMICONDUCTOR TEC H N IC A L D A TA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING. FEATURES • Low Collector Saturation Voltage : VCE sat =0.5V(Max.) at (IC=0.5A). • High Switching Speed Typically. : tf=0.4j/S at Ic=lA. • Complementary to KTA1862D.
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KTC3631D/L
KTA1862D.
TRANSISTOR VCE 400V 500mA
KTA1862D
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KTC4520F
Abstract: No abstract text available
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC4520F TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • Excellent Switching Times. : ton=0.5juS Max. , tf=0.3j/S(M ax.), at Ic=2A.
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KTC4520F
200juH
KTC4520F
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