NPN TRANSISTOR 13003D Search Results

NPN TRANSISTOR 13003D Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

NPN TRANSISTOR 13003D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
13003D Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003DE 13003DE 13003DEL-x-T60-F-K 13003DEG-x-T60-F-K 13003DEL-x-T92-A-B 13003DEG-x-T92-A-B 1300at QW-R223-013 13003D	PDF
13003d Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS  DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003DE 13003DE 13003DEL-x-T60-K 13003DEG-x-T60-K 13003DEL-x-T92-B 13003DEG-at QW-R223-013 13003d	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-K QW-R223-011	PDF
NPN transistor Electronic ballast to92 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003DW 13003DW 13003DWL-x-TM3-T 13003DWL-x-T60-F-K 13003DWL-x-T92-A-B 13003DWL-x-T92-A-K 13003Dat QW-R223-012 NPN transistor Electronic ballast to92	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-F-K 13003DHL-x-T92-A-B 13003DHL-x-Tat QW-R223-011	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003DW 13003DW 13003DWL-x-TM3-T 13003DWL-x-T60-K 13003DWL-x-T92-B 13003DWL-x-T92-K QW-R223-012	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003DF Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DF is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003DF 13003DF 13003DFL-xx-T60-F-K 13003DFG-xx-T60-F-K 13003DFL-xx-T9at QW-R223-014	PDF
13003D Abstract: APT13003DI-G1 Text: Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003D is a high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power.	Original	APT13003D O-126 O-251 APT13003D O-126 O-251 13003D APT13003DI-G1	PDF
13003d Abstract: CD13003D 13003DB 13003 marking code XY 13003DA 13003DF NPN Transistor 600V 0,2A 13003DC 13003DE Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13003D TO126 Plastic Package With Built - in Integrated Diode between Emitter & Collector ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage	Original	CD13003D C-120 CD13003D 120310E 13003d 13003DB 13003 marking code XY 13003DA 13003DF NPN Transistor 600V 0,2A 13003DC 13003DE	PDF
13003DB Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13003D TO126 Plastic Package With Built - in Integrated Diode between Emitter & Collector ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage	Original	CD13003D C-120 CD13003D 120310E 13003DB	PDF
transistor 13003d Abstract: 13003d br 13003d 13003d TRANSISTOR transistor br 13003d ST13003D-K transistor st 13003d NPN transistor 13003D ELECTRONIC BALLAST transistor DIAGRAM transistor ST 13003D w, TO-126 Text: ST13003D-K High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode	Original	ST13003D-K OT-32 transistor 13003d 13003d br 13003d 13003d TRANSISTOR transistor br 13003d ST13003D-K transistor st 13003d NPN transistor 13003D ELECTRONIC BALLAST transistor DIAGRAM transistor ST 13003D w, TO-126	PDF
transistor 13003d Abstract: 13003d 13003d TRANSISTOR equivalent br 13003d 13003D TRANSISTOR 13003D Datasheet transistor st 13003d NPN transistor 13003D ST13003D-K w 13003d TRANSISTOR npn Text: ST13003D-K High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode	Original	ST13003D-K OT-32 transistor 13003d 13003d 13003d TRANSISTOR equivalent br 13003d 13003D TRANSISTOR 13003D Datasheet transistor st 13003d NPN transistor 13003D ST13003D-K w 13003d TRANSISTOR npn	PDF
13003d Abstract: ibm rev.1.5 ST13003DN st marking code marking code SUs 15 NPN POWER TRANSISTOR SOT-32 STMicroelectronics DIODE marking code ST13003D Text: ST13003DN High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated free-wheeling diode Application ■ 1 2 3 Compact fluorescent lamps CFLs	Original	ST13003DN OT-32 13003DN 13003d ibm rev.1.5 ST13003DN st marking code marking code SUs 15 NPN POWER TRANSISTOR SOT-32 STMicroelectronics DIODE marking code ST13003D	PDF
13003d Abstract: transistor 13003d Text: ST13003D-K High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode	Original	ST13003D-K OT-32 13003d transistor 13003d	PDF

13003d Abstract: ST13003D st13003dn Text: ST13003DN High voltage fast-switching NPN power transistor Preliminary data Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated free-wheeling diode u d o Application ■ s ct r P e Compact fluorescent lamps (CFLs)	Original	ST13003DN OT-32 1300s 13003d ST13003D st13003dn	PDF
13003D Abstract: br 13003d transistor 13003d br+13003d Text: DXT13003DK 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features Mechanical Data • BVCEO > 450V • • BVCES > 700V • Case Material: Molded Plastic, "Green" Molding Compound • BVEBO > 9V • • • IC = 1.5A high Continuous Collector Current Integrated Anti-Parallel Diode to act as free-wheeling diode	Original	DXT13003DK J-STD-020 MIL-STD-202, DS37297 13003D br 13003d transistor 13003d br+13003d	PDF
13003D Abstract: transistor 13003d NPN transistor 13003D transistor br 13003d br 13003d Text: A Product Line of Diodes Incorporated Green APT13003D 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data •          BVCEO > 450V BVCES > 700V BVEBO > 9V IC = 1.5A high Continuous Collector Current Integrated Collector-Emitter Diode to act as free-wheeling diode	Original	APT13003D MIL-STD-202, 200mg 400mg DS36347 13003D transistor 13003d NPN transistor 13003D transistor br 13003d br 13003d	PDF